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Carrier Dynamics in Mid-Infrared Quantum Well Lasers Using Time-Resolved Photoluminescence59,99 €![Deviation of Time-Resolved Luminescence Dynamics in MWIR Semiconductor Materials from Carrier Recombination Theory Predictions]( "Deviation of Time-Resolved Luminescence Dynamics in MWIR Semiconductor Materials from Carrier Recombination Theory Predictions")
Deviation of Time-Resolved Luminescence Dynamics in MWIR Semiconductor Materials from Carrier Recombination Theory Predictions59,99 €![Limitations in Time Resolved Photoluminescence of Gallium Nitride Using a Streak Camera]( "Limitations in Time Resolved Photoluminescence of Gallium Nitride Using a Streak Camera")
Limitations in Time Resolved Photoluminescence of Gallium Nitride Using a Streak Camera59,99 €![Using Time-Resolved Photoluminescence to Measure the Excitation and Temperature Dependence of Carrier Relaxation in Mid-Wave Infrared Semiconductors]( "Using Time-Resolved Photoluminescence to Measure the Excitation and Temperature Dependence of Carrier Relaxation in Mid-Wave Infrared Semiconductors")
Using Time-Resolved Photoluminescence to Measure the Excitation and Temperature Dependence of Carrier Relaxation in Mid-Wave Infrared Semiconductors59,99 €![Photoluminescence of Single Quantum Well Structures in Gallium Arsenide]( "Photoluminescence of Single Quantum Well Structures in Gallium Arsenide")
Photoluminescence of Single Quantum Well Structures in Gallium Arsenide59,99 €![Optical and Electrical Characterization of Bulk Grown Indium-Gallium-Arsenide Alloys]( "Optical and Electrical Characterization of Bulk Grown Indium-Gallium-Arsenide Alloys")
Optical and Electrical Characterization of Bulk Grown Indium-Gallium-Arsenide Alloys59,99 €![Optical Characterization of Thick Growth Orientation-Patterned Gallium Arsenide]( "Optical Characterization of Thick Growth Orientation-Patterned Gallium Arsenide")
Optical Characterization of Thick Growth Orientation-Patterned Gallium Arsenide59,99 €
GaAs is a potential semiconductor material for producing both mid-infrared and terahertz radiation using the new technique of quasi-phase matching in an orientationally patterned GaAs (OP-GaAs) crystal. OP-GaAs is grown using a fast growth process called hydride vapor phase epitaxy (HVPE), unfortunately, HVPE produces a high number of defects. These defects cause Shockley-Read-Hall recombination rates to dominate over Auger and radiative recombination rates. The carrier lifetime from four GaAs samples are reported here using two different experimental techniques. The first experiment used a streak camera to measure the carrier lifetime via time-resolved photoluminescence.