Deviation of Time-Resolved Luminescence Dynamics in MWIR Semiconductor Materials from Carrier Recombination Theory Predictions
Peter M. Johnson
Broschiertes Buch

Deviation of Time-Resolved Luminescence Dynamics in MWIR Semiconductor Materials from Carrier Recombination Theory Predictions

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Time resolved luminescence spectroscopy was used to characterize luminescence decay curves for a bulk InAs sample and an InAsSb type-I quantum-well sample over the first 3ns following excitation. The luminescence decay curves were then converted to carrier densities and used to find recombination coefficients that provided the least-squared-error solution of the rate equation describing carrier recombination. Recombination coefficients describing Shockley-Read-Hall (ASRH), radiative (Brad), and Auger (CAug) recombination were determined at two different temperatures and four excitation powers,...