Andere Kunden interessierten sich auch für
![Using Time-Resolved Photoluminescence to Measure the Excitation and Temperature Dependence of Carrier Relaxation in Mid-Wave Infrared Semiconductors]( "Using Time-Resolved Photoluminescence to Measure the Excitation and Temperature Dependence of Carrier Relaxation in Mid-Wave Infrared Semiconductors")
Using Time-Resolved Photoluminescence to Measure the Excitation and Temperature Dependence of Carrier Relaxation in Mid-Wave Infrared Semiconductors59,99 €![Time-Resolved Photoluminescence of Inas/Gainsb Quantum Well Lasers]( "Time-Resolved Photoluminescence of Inas/Gainsb Quantum Well Lasers")
Time-Resolved Photoluminescence of Inas/Gainsb Quantum Well Lasers59,99 €![Optical Characterization of Antimony-Based, Types-I and -II, Multiple Quantum-Well Semiconductor Structures for Mid-Infrared Laser Applications]( "Optical Characterization of Antimony-Based, Types-I and -II, Multiple Quantum-Well Semiconductor Structures for Mid-Infrared Laser Applications")
Optical Characterization of Antimony-Based, Types-I and -II, Multiple Quantum-Well Semiconductor Structures for Mid-Infrared Laser Applications59,99 €![Carrier Lifetime Dynamics of Epitaxial Layer HVPE Gallium Arsenide Using Time-Resolved Experiments]( "Carrier Lifetime Dynamics of Epitaxial Layer HVPE Gallium Arsenide Using Time-Resolved Experiments")
Carrier Lifetime Dynamics of Epitaxial Layer HVPE Gallium Arsenide Using Time-Resolved Experiments59,99 €![Deviation of Time-Resolved Luminescence Dynamics in MWIR Semiconductor Materials from Carrier Recombination Theory Predictions]( "Deviation of Time-Resolved Luminescence Dynamics in MWIR Semiconductor Materials from Carrier Recombination Theory Predictions")
Deviation of Time-Resolved Luminescence Dynamics in MWIR Semiconductor Materials from Carrier Recombination Theory Predictions59,99 €![Photoluminescence of Single Quantum Well Structures in Gallium Arsenide]( "Photoluminescence of Single Quantum Well Structures in Gallium Arsenide")
Photoluminescence of Single Quantum Well Structures in Gallium Arsenide59,99 €![Classification of Battlespace Detonations from Temporally Resolved Multi-Band Imagery and Mid-Infrared Spectra]( "Classification of Battlespace Detonations from Temporally Resolved Multi-Band Imagery and Mid-Infrared Spectra")
Classification of Battlespace Detonations from Temporally Resolved Multi-Band Imagery and Mid-Infrared Spectra60,99 €
The objective of this research is to improve the performance of semiconductor quantum well lasers operating in the mid-infrared. Research in mid-infrared laser technology has uncovered numerous applications for commercial and government use. Many military applications require operation near room temperature with compact power supplies. Limiting factors for improving the efficiency of mid-infrared semiconductor lasers at elevated temperatures include non-radiative recombination and carrier relaxation. Carrier lifetimes are typically on the order of 5 nsec, therefore, recombination mechanisms and carrier relaxation times are difficult to measure directly. Time-resolved photoluminescence (TRPL), utilizing a non-linear wave mixing technique known as upconversion, is used to study the time evolution of carrier densities in semiconductor lasers. Carrier recombination and relaxation information is extracted from this data to further the understanding of how quantum well structures impact semiconductor laser performance.