Crystal Growth Technology (eBook, PDF)
From Fundamentals and Simulation to Large-scale Production
Redaktion: Scheel, Hans J.; Capper, Peter
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Crystal Growth Technology (eBook, PDF)
From Fundamentals and Simulation to Large-scale Production
Redaktion: Scheel, Hans J.; Capper, Peter
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In this book top experts treat general thermodynamic aspects of crystal fabrication; numerical simulation of industrial growth processes; commercial production of bulk silicon, compound semiconductors, scintillation and oxide crystals; X-ray characterization; and crystal machining. Also, the role of crystal technology for renewable energy and for saving energy is discussed. It will be useful for scientists and engineers involved in crystal and epilayer fabrication as well as for teachers and graduate students in material science, chemical and metallurgical engineering, and micro- and optoelectronics, including nanotechnology.…mehr
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Dieser Download kann aus rechtlichen Gründen nur mit Rechnungsadresse in A, B, BG, CY, CZ, D, DK, EW, E, FIN, F, GR, HR, H, IRL, I, LT, L, LR, M, NL, PL, P, R, S, SLO, SK ausgeliefert werden.
- Produktdetails
- Verlag: Wiley-VCH
- Seitenzahl: 505
- Erscheinungstermin: 22. September 2011
- Englisch
- ISBN-13: 9783527623457
- Artikelnr.: 40912404
- Verlag: Wiley-VCH
- Seitenzahl: 505
- Erscheinungstermin: 22. September 2011
- Englisch
- ISBN-13: 9783527623457
- Artikelnr.: 40912404
TECHNOLOGY. 1. The Development of Crystal Growth Technology (H. J.
ScheelI). Abstract. References. 2. Thermodynamic Fundamentals of Phase
Transitions Applied to Crystal Growth Processes (P. Rudolph). References.
3. Interface-kinetics-driven Facet Formation During Melt Growth of Oxide
Crystals (S. Brandon, A. Virozub and Y. Liu). Abstract. Acknowledgments.
Note Added in Proof. References. 4. Theoretical and Experimental Solutions
of the Striation Problem (H. J. Scheel). Abstract. References. 5.
High-resolution X-Ray Diffraction Techniques for Structural
Characterization of Silicon and other Advanced Materials (K. Lal).
References. 6. Computational Simulations of the Growth of Crystals from
Liquids (A. Yeckel and J. J. Derby). Acknowledgments. References. 7. Heat
and Mass Transfer under Magnetic Fields (K. Kakimoto). Abstract.
Acknowledgment. References. 8. Modeling of Technologically Important
Hydrodynamics and Heat/Mass Transfer Processes during Crystal Growth (V. I.
Polezhaev). Acknowledgments. References. PART 2: SILICON. 9. Influence of
Boron Addition on Oxygen Behavior in Silicon Melts (K. Terashima).
Abstract. Acknowledgments. References. 10. Octahedral Void Defects in
Czochralski Silicon (M. Itsumi). References. 11. The Control and
Engineering of Intrinsic Point Defects in Silicon Wafers and Crystals (R.
Falster, V. V. Voronkov and P. Mutti). Abstract. Acknowledgments.
References. 12. The Formation of Defects and Growth Interface Shapes in CZ
Silicon (T. Abe). Abstract. References. 13. Silicon Crystal Growth for
Photovoltaics (T. F. Ciszek). References. PART 3: COMPOUND SEMICONDUCTORS.
14. Fundamental and Technological Aspects of Czochralski Growth of
High-quality Semi-insulating GaAs Crystals (P. Rudolph and M. Jurisch).
Acknowledgement. References. 15. Growth of III-V and II-VI Single Crystals
by the Verticalgradient-freeze Method (T. Asahi, K. Kainosho, K. Kohiro, A.
Noda, K. Sato and O. Oda). References. 16. Growth Technology of III-V
Single Crystals for Production (T. Kawase, M. Tatsumi and Y. Nishida).
References. 17. CdTe and CdZnTe Growth (R. Triboulet). References. PART 4:
OXIDES AND HALIDES. 18. Phase-diagram Study for Growing Electro-optic
Single Crystals (S. Miyazawa). Abstract. Acknowledgment. References. 19.
Melt Growth of Oxide Crystals for SAW, Piezoelectric, and Nonlinear-Optical
Applications (K. Shimamura, T. Fukuda and V. I. Chani). References. 20.
Growth of Nonlinear-optical Crystals for Laser-frequency Conversion (T.
Sasaki, Y. Mori and M. Yoshimura). References. 21. Growth of Zirconia
Crystals by Skull-Melting Technique (E. E. Lomonova and V. V. Osiko).
Acknowledgments. References. 22. Shaped Sapphire Production (L. A.
Lytvynov). References. 23. Halogenide Scintillators: Crystal Growth and
Performance (A. V. Gektin and B. G. Zaslavsky). References. PART 5: CRYSTAL
MACHINING. 24. Advanced Slicing Techniques for Single Crystals (C. Hauser
and P. M. Nasch). Abstract. References. 25. Methods and Tools for
Mechanical Processing of Anisotropic Scintillating Crystals (M. Lebeau).
References. 26. Plasma-CVM (Chemical Vaporization Machining) (Y. Mori, K.
Yamamura, and Y. Sano). Acknowledgements. References. 27. Numerically
Controlled EEM (Elastic Emission Machining) System for Ultraprecision
Figuring and Smoothing of Aspherical Surfaces (Y. Mori, K. Yamauchi, K.
Hirose, K. Sugiyama, K. Inagaki and H. Mimura). Acknowledgement.
References. PART 6: EPITAXY AND LAYER DEPOSITION. 28. Control of Epitaxial
Growth Modes for High-performance Devices (H. J. Scheel). Abstract. General
References. References. 29. High-rate Deposition of Amorphous Silicon Films
by Atmospheric pressure Plasma Chemical Vapor Deposition (Y. Mori, H.
Kakiuchi, K. Yoshii and K. Yasutake). Abstract. Acknowledgements.
References. Index.
TECHNOLOGY. 1. The Development of Crystal Growth Technology (H. J.
ScheelI). Abstract. References. 2. Thermodynamic Fundamentals of Phase
Transitions Applied to Crystal Growth Processes (P. Rudolph). References.
3. Interface-kinetics-driven Facet Formation During Melt Growth of Oxide
Crystals (S. Brandon, A. Virozub and Y. Liu). Abstract. Acknowledgments.
Note Added in Proof. References. 4. Theoretical and Experimental Solutions
of the Striation Problem (H. J. Scheel). Abstract. References. 5.
High-resolution X-Ray Diffraction Techniques for Structural
Characterization of Silicon and other Advanced Materials (K. Lal).
References. 6. Computational Simulations of the Growth of Crystals from
Liquids (A. Yeckel and J. J. Derby). Acknowledgments. References. 7. Heat
and Mass Transfer under Magnetic Fields (K. Kakimoto). Abstract.
Acknowledgment. References. 8. Modeling of Technologically Important
Hydrodynamics and Heat/Mass Transfer Processes during Crystal Growth (V. I.
Polezhaev). Acknowledgments. References. PART 2: SILICON. 9. Influence of
Boron Addition on Oxygen Behavior in Silicon Melts (K. Terashima).
Abstract. Acknowledgments. References. 10. Octahedral Void Defects in
Czochralski Silicon (M. Itsumi). References. 11. The Control and
Engineering of Intrinsic Point Defects in Silicon Wafers and Crystals (R.
Falster, V. V. Voronkov and P. Mutti). Abstract. Acknowledgments.
References. 12. The Formation of Defects and Growth Interface Shapes in CZ
Silicon (T. Abe). Abstract. References. 13. Silicon Crystal Growth for
Photovoltaics (T. F. Ciszek). References. PART 3: COMPOUND SEMICONDUCTORS.
14. Fundamental and Technological Aspects of Czochralski Growth of
High-quality Semi-insulating GaAs Crystals (P. Rudolph and M. Jurisch).
Acknowledgement. References. 15. Growth of III-V and II-VI Single Crystals
by the Verticalgradient-freeze Method (T. Asahi, K. Kainosho, K. Kohiro, A.
Noda, K. Sato and O. Oda). References. 16. Growth Technology of III-V
Single Crystals for Production (T. Kawase, M. Tatsumi and Y. Nishida).
References. 17. CdTe and CdZnTe Growth (R. Triboulet). References. PART 4:
OXIDES AND HALIDES. 18. Phase-diagram Study for Growing Electro-optic
Single Crystals (S. Miyazawa). Abstract. Acknowledgment. References. 19.
Melt Growth of Oxide Crystals for SAW, Piezoelectric, and Nonlinear-Optical
Applications (K. Shimamura, T. Fukuda and V. I. Chani). References. 20.
Growth of Nonlinear-optical Crystals for Laser-frequency Conversion (T.
Sasaki, Y. Mori and M. Yoshimura). References. 21. Growth of Zirconia
Crystals by Skull-Melting Technique (E. E. Lomonova and V. V. Osiko).
Acknowledgments. References. 22. Shaped Sapphire Production (L. A.
Lytvynov). References. 23. Halogenide Scintillators: Crystal Growth and
Performance (A. V. Gektin and B. G. Zaslavsky). References. PART 5: CRYSTAL
MACHINING. 24. Advanced Slicing Techniques for Single Crystals (C. Hauser
and P. M. Nasch). Abstract. References. 25. Methods and Tools for
Mechanical Processing of Anisotropic Scintillating Crystals (M. Lebeau).
References. 26. Plasma-CVM (Chemical Vaporization Machining) (Y. Mori, K.
Yamamura, and Y. Sano). Acknowledgements. References. 27. Numerically
Controlled EEM (Elastic Emission Machining) System for Ultraprecision
Figuring and Smoothing of Aspherical Surfaces (Y. Mori, K. Yamauchi, K.
Hirose, K. Sugiyama, K. Inagaki and H. Mimura). Acknowledgement.
References. PART 6: EPITAXY AND LAYER DEPOSITION. 28. Control of Epitaxial
Growth Modes for High-performance Devices (H. J. Scheel). Abstract. General
References. References. 29. High-rate Deposition of Amorphous Silicon Films
by Atmospheric pressure Plasma Chemical Vapor Deposition (Y. Mori, H.
Kakiuchi, K. Yoshii and K. Yasutake). Abstract. Acknowledgements.
References. Index.