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In this work we present the results of the thin films of boron nitride deposited by D.C. and R.F. magnetron sputtering from hot-pressed B4C and h-BN targets on two different substrates: Si3N4 ceramics with different surface finishing and Si(100) wafers. The influence of parameters such as substrate temperature and working gas composition ratio (N2 or Ar), on film thickness, deposition rate, cristallinity, residual stress, phase composition and hardness, were systematically investigated using techniques like SEM, XRD, FT-IR and nanohardness.

Produktbeschreibung
In this work we present the results of the thin films of boron nitride deposited by D.C. and R.F. magnetron sputtering from hot-pressed B4C and h-BN targets on two different substrates: Si3N4 ceramics with different surface finishing and Si(100) wafers. The influence of parameters such as substrate temperature and working gas composition ratio (N2 or Ar), on film thickness, deposition rate, cristallinity, residual stress, phase composition and hardness, were systematically investigated using techniques like SEM, XRD, FT-IR and nanohardness.
Autorenporträt
Jean Lorenzzi, born in Brazil, has obtained a Master in Materials Science by ERASMUS MUNDUS programme, an international top-level programme selected by the European Union, at Aveiro University (Portugal), Hamburg University of Technology (Germany) and Aalborg University (Denmark), all members of the European Consortium of Innovative Universities.