Amorphous Oxide Semiconductors

Igzo and Related Materials for Display and Memory
Herausgegeben:Hosono, Hideo; Kumomi, Hideya

• Gebundenes Buch

Produktbeschreibung

AMORPHOUS OXIDE SEMICONDUCTORS

A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field

In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of--and latest developments in--transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors.

The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes:
_ A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design
_ Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects
_ Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics
_ In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs

Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices.

WILEY SID Series in Display Technology

Series Editor: Ian Sage, Abelian Services, Malvern, UK

The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.

Produktdetails

• Wiley Series in Display Technology
• Verlag: Wiley / Wiley & Sons
• Artikelnr. des Verlages: 1W119715570
• 1. Auflage
• Seitenzahl: 640
• Erscheinungstermin: 31. Mai 2022
• Englisch
• Abmessung: 260mm x 208mm x 39mm
• Gewicht: 1558g
• ISBN-13: 9781119715573
• ISBN-10: 1119715571
• Artikelnr.: 62759671

Autorenporträt

Hideo Hosono, PHD, is Honorary and Institute Professor at the Tokyo Institute of Technology and distinguished fellow at the National Institute for Materials Science, Japan. He received his doctorate from the Tokyo Metropolitan University in 1982, and his research is focused on the creation of novel electronic functional materials. He is a pioneer of oxide semiconductors including IGZO-TFTs, iron-based superconductors and electrides. Hideya Kumomi, DR.SCI., is Specially Appointed Professor at the Tokyo Institute of Technology Materials Research Center for Element Strategy, Japan. He received his doctorate from Waseda University in 1996 and his research has been focused on semiconductor materials and devices.

Inhaltsangabe

Preface xv

Series Editor's Foreword xvii

About the Editors xviii

List of Contributors xix

Part I Introduction 1

1.1 Transparent Amorphous Oxide Semiconductors for Display Applications 3
Hideo Hosono

1.1.1 Introduction to Amorphous Semiconductors as Thin-Film Transistor (TFT) Channels 3

1.1.2 Historical Overview 4

1.1.3 Oxide and Silicon 6

1.1.4 Transparent Amorphous Oxide Semiconductors 6

1.1.4.1 Electronic Structures 6

1.1.4.2 Materials 8

1.1.4.3 Characteristic Carrier Transport Properties 9

1.1.4.4 Electronic States 10

1.1.5 P-Type Oxide Semiconductors for Display Applications 13

1.1.5.1 Oxides of Transition Metal Cations with an Electronic Configuration of (n.1)d 10 ns 0 (n = 4or5) 13

1.1.5.2 Oxides of Metal Cations with an Electronic Configuration of ns 2 13

1.1.5.3 Oxides of Metal Cations with an Electronic Configuration of nd 6 14

1.1.6 Novel Amorphous Oxide Semiconductors 15

1.1.7 Summary and Outlook 17

References 18

1.2 Transparent Amorphous Oxide Semiconductors 21
Hideya Kumomi

1.2.1 Introduction 21

1.2.2 Technical Issues and Requirements of TFTs for AM-FPDs 21

1.2.2.1 Field-Effect Mobility 21

1.2.2.2 Off-State Leakage Current and On/Off Current Ratio 23

1.2.2.3 Stability and Reliability 23

1.2.2.4 Uniformity 23

1.2.2.5 Large-Area Devices by Large-Area Mother-Glass Substrates 24

1.2.2.6 Low-Temperature Fabrication and Flexibility 24

1.2.3 History, Features, Uniqueness, Development, and Applications of AOS-TFTs 24

1.2.3.1 History 24

1.2.3.2 Features and Uniqueness 25

1.2.3.3 Applications 27

1.2.3.4 Development and Products of AM-FPDs 28

1.2.4 Summary 29

References 30

Part II Fundamentals 31

2 Electronic Structure and Structural Randomness 33
Julia E. Medvedeva, Bishal Bhattarai, and D. Bruce Buchholz

2.1 Introduction 33

2.2 Brief Description of Methods and Approaches 35

2.2.1 Computational Approach 35

2.2.2 Experimental Approach 36

2.3 The Structure and Properties of Crystalline and Amorphous In 2 O 3 36

2.4 The Structure and Properties of Crystalline and Amorphous SnO 2 43

2.5 The Structure and Properties of Crystalline and Amorphous ZnO 46

2.6 The Structure and Properties of Crystalline and Amorphous Ga 2 O 3 52

2.7 Role of Morphology in Structure-Property Relationships 57

2.8 The Role of Composition in Structure-Property Relationships: IGO and IGZO 64

2.9 Conclusions 69

References 70

3 Electronic Structure of Transparent Amorphous Oxide Semiconductors 73
John Robertson and Zhaofu Zhang

3.1 Introduction 73

3.2 Mobility 73

3.3 Density of States 74

3.4 Band Structures of n-Type Semiconductors 78

3.5 Instabilities 81

3.6 Doping Limits and Finding Effective Oxide Semiconductors 86

3.7 OLED Electrodes 88

3.8 Summary 89

References 89

4 Defects and Relevant Properties 93
Toshio Kamiya, Kenji Nomura, Keisuke Ide, and Hideo Hosono

4.1 Introduction 93

4.2 Typical Deposition Condition 93

4.3 Overview of Electronic Defects in AOSs 94

4.4 Origins of Electron Donors 96

4.5 Oxygen- and Hydrogen-Related Defects and Near-VBM States 98

4.6 Summary 102

References 102

5 Amorphous Semiconductor Mobility Physics and TFT Modeling 105
John F.