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  • Gebundenes Buch

Electrical Characterization of Organic Electronic Materials and Devices gives new insights into the electronic properties and measurement techniques for low-mobility electronic devices; characterizes the thin-film transistor using its own model; links the phenomena seen in different device structures and different measurement techniques; presents clearly both how to perform electrical measurements of organic and low-mobility materials and how to extract important information from these measurements; and provides a much-needed theoretical foundation for organic electronic.…mehr

Produktbeschreibung
Electrical Characterization of Organic Electronic Materials and Devices gives new insights into the electronic properties and measurement techniques for low-mobility electronic devices; characterizes the thin-film transistor using its own model; links the phenomena seen in different device structures and different measurement techniques; presents clearly both how to perform electrical measurements of organic and low-mobility materials and how to extract important information from these measurements; and provides a much-needed theoretical foundation for organic electronic.
  • Produktdetails
  • Verlag: John Wiley & Sons / WILEY
  • Seitenzahl: 316
  • Erscheinungstermin: November 2009
  • Englisch
  • Abmessung: 240mm x 172mm x 27mm
  • Gewicht: 585g
  • ISBN-13: 9780470750094
  • ISBN-10: 047075009X
  • Artikelnr.: 28707993
Inhaltsangabe
Preface. 1 General concepts. 1.1 Introduction. 1.2 Conduction mechanism. 1.3 Chemistry and the energy diagram. 1.4 Disordered materials and the Meyer
Neldel Rule. 1.5 Devices. 1.6 Optoelectronics/photovoltaics. 2 Two
terminal devices: DC current. 2.1 Conductance. 2.2 DC current of a Schottky barrier. 2.3 DC measurements. 3 Two
terminal devices: Admittance spectroscopy. 3.1 Admittance spectroscopy. 3.2 Geometrical capacitance. 3.3 Equivalent circuits. 3.4 Resistor; SCLC. 3.5 Schottky diodes. 3.6 MIS diodes. 3.7 MIS tunnel diode. 3.8 Noise measurements. 4 Two
terminal devices: Transient techniques. 4.1 Kinetics: Emission and capture of carriers. 4.2 Current transient spectroscopy. 4.3 Thermally stimulated current. 4.4 Capacitance transient spectroscopy. 4.5 Deep
level transient spectroscopy. 4.6 Q
DLTS. 5 Time
of
flight. 5.1 Introduction. 5.2 Drift transient. 5.3 Diffusive transient. 5.4 Violating einstein's relation. 5.5 Multi
trap
and
release. 5.6 Anomalous transients. 5.7 High current (space charge) transients. 5.8 Summary of the ToF technique. 6 Thin
film transistors. 6.1 Field
effect transistors. 6.2 MOS
FET. 6.3 Introducing TFTs. 6.4 Basic model. 6.5 Justification for the two
dimensional approach. 6.6 Ambipolar materials and devices. 6.7 Contact effects and other simple nonidealities. 6.8 Metallic contacts in TFTs. 6.9 Normally
on TFTs. 6.10 Effects of traps. 6.11 Admittance spectroscopy for the determination of the mobility in TFTs. 6.12 Summary of TFT measurements. 6.13 Diffusion transistor. Appendix A A Derivation of Equations (2.21), (2.25), (6.95) and (6.101). Bibliography. Index.