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Systematically describes the physical and materials properties of copper-based quaternary chalcogenide semiconductor materials, enabling their potential for photovoltaic device applications.
Intended for scientists and engineers, in particular, in the fields of multinary semiconductor physics and a variety of photovoltaic and optoelectronic devices.
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Systematically describes the physical and materials properties of copper-based quaternary chalcogenide semiconductor materials, enabling their potential for photovoltaic device applications.
Intended for scientists and engineers, in particular, in the fields of multinary semiconductor physics and a variety of photovoltaic and optoelectronic devices.
Intended for scientists and engineers, in particular, in the fields of multinary semiconductor physics and a variety of photovoltaic and optoelectronic devices.
Produktdetails
- Produktdetails
- Verlag: Wiley & Sons
- 1. Auflage
- Seitenzahl: 528
- Erscheinungstermin: 2. Dezember 2015
- Englisch
- Abmessung: 251mm x 174mm x 30mm
- Gewicht: 841g
- ISBN-13: 9781119052777
- ISBN-10: 1119052777
- Artikelnr.: 42779570
- Verlag: Wiley & Sons
- 1. Auflage
- Seitenzahl: 528
- Erscheinungstermin: 2. Dezember 2015
- Englisch
- Abmessung: 251mm x 174mm x 30mm
- Gewicht: 841g
- ISBN-13: 9781119052777
- ISBN-10: 1119052777
- Artikelnr.: 42779570
Professor Sadao Adachi, Division of Electronics and Informatics, Faculty of Science and Technology, Gunma University, Japan
Preface Abbreviations and Acronyms 1 Introduction 1.1 Natural Abundance of
Elements in the Earth's Crust 1.1.1 Chemical Elements 1.1.2 Solar Cells and
Earth-Abundant Materials 1.2 Solar Radiation Spectrum 1.3
Shockley?{Queisser Efficiency Limit 1.4 Fundamental Properties of
Photovoltaic Semiconductor Materials 1.5 Solar Cell Device Characteristics
1.6 Prediction of Physical Properties for Complex Material System 1.6.1 An
Effective-Medium Approximation 1.6.2 An Interpolation Scheme References 2
Structural Properties 2.1 Grimm?{Sommerfeld Rule 2.2 Crystal Structure
2.2.1 Crystal Structure 2.2.2 Theoretical Phase Stability 2.3 Lattice
Constant and Related Parameters 2.3.1 Bulk Material (a) Quaternary material
(b) Solid solution (c) External perturbation effect (d) Heteroepitaxy 2.3.2
Nanocrystalline Material (a) Quaternary material (b) Solid solution 2.4
Structural Phase Transition References 3 Thermal Properties 3.1 Phase
Diagram 3.1.1 Cu2Zn?{IV?{VI4 Quaternary 3.1.2 Cu2Cd?{IV?{VI4 Quaternary
3.1.3 Cu2Hg?{IV?{VI4 Quaternary 3.1.4 Cu2?{II?{IV?{VI4 Solid Solution 3.2
Melting Point 3.3 Specific Heat 3.4 Debye Temperature 3.5 Thermal Expansion
Coefficient 3.6 Thermal Conductivity 3.6.1 Quaternary Material 3.6.2 Alloy
Material (a) Theoretical model (b) Analysis 3.7 Thermal Duffusivity
References and Notes 4 Elastic, Mechanical and Lattice Dynamic Properties
4.1 Elastic Constant 4.1.1 General Remark 4.1.2 Theoretical Value 4.1.3
Yang's Modulus, Poisson's Ratio and Similar 4.1.4 Sound Velocity 4.2
Microhardness 4.3 Lattice Dynamic Properties 4.3.1 Phonon Dispersion
Relation 4.3.2 Raman Scattering: Tetragonal Lattice 4.3.3 Raman Scattering:
Orthorhombic Lattice 4.3.4 Effect of Atomic Mass on Phonon Frequency 4.3.5
Raman Scattering: Solid Solution (a) General remark (b) Experimental data
4.3.6 Raman Scattering: Excitation Wavelength Dependence (a) Theoretical
consideration (b) Experimental data 4.3.7 Far-IR Spectroscopy 4.3.8
External Perturbation Effect (a) Theoretical consideration (b) Experimental
data 4.3.8 Nanocrystalline Material (a) General remark (b) Experimental
data References 5 Electronic Energy-Band Structure 5.1 General Remark 5.1.1
Energy-Band Structure (a) Tetragonal material (b) Orthorhombic material
5.1.2 ?·-Point Energy-Band Scheme 5.1.3 Band-Gap Energy: External
Perturbation and Doping Effects (a) Temperature effect (b) Pressure effect
(c) Doping effect 5.1.4 Effective Mass: External Perturbation and Doping
Effects 5.2 Lowest Indirect and Direct Band-Gap Energies 5.2.1 Quaternary
Material 5.2.2 Solid Solution 5.3 Higher-Lying Band-Gap Energy 5.4 External
Perturbation Effect on the Band-Gap Energy: Experimental Data 5.5 Effective
Mass 5.5.1 Electron Effective Mass 5.5.2 Hole Effective Mass 5.6
Nanocrystalline Band-Gap Energy 5.6.1 Quaternary Material 5.6.2 Solid
Solution 5.7 Heterojunction Band Offset 5.7.1 General Consideration 5.7.2
Theoretical Value 5.7.3 Experimental Value (a) Window/buffer heterojunction
material system (b) Buffer/absorber heterojunction material system (c)
Window/buffer/Cu2?{II?{IV?{VI4 solar cell structure 5.8 Electron Affinity
5.9 Schottky Barrier Height References 6 Optical Properties 6.1 General
Remark 6.1.1 Dielectric Permittivity: Tensor Representation 6.1.2 Optical
Dispersion Relation (a) Basic expression (b) Optical sum rule 6.1.3 Optical
Spectrum: Classification into Several Regions 6.2 The Reststrahlen Region
6.2.1 Static and High-Frequency Dielectric Constants 6.2.2 Reststrahlen
Spectrum (a) Theoretical expression (b) Experimental data 6.3 At or Near
the Fundamental Absorption Edge 6.3.1 Exciton Parameter (a) Theoretical
expression (b) Experimental data 6.3.2 Optical Absorption (a) Free-carrier,
IVB and ICB absorptions (b) At the direct absorption edge: Theoretical
expression (c) At the indirect absorption edge: Theoretical expression (d)
Urbach's tail (e) Experimental data 6.3.3 Refractive Index (a) Theoretical
expression (b) Experimental data 6.4 The Interband Transition Region 6.4.1
Model Dielectric Function 6.4.2 Optical Spectrum and MDF Analysis 6.4.3
Optical Absorption Spectrum 6.4.4 Optical Constant in the 0?n?{?n10000 eV
Spectral Region References 7 Carrier Transport Properties 7.1 Electron
Transport Properties 7.2 Hole Hall Mobility 7.2.1 General Remark 7.2.2
Room-Temperature Value 7.2.3 Temperature Dependence 7.2.4 Effect of
Stoichiometry, Alloying and Foreign Atom Doping (a) Effect of stoichiometry
(b) Effect of alloying (c) Affect of foreign atom doping 7.3 Electrical
Resistivity 7.3.1 Free-Hole Conduction (a) Quaternary material (b) Solid
solution 7.3.2 Hopping Conduction 7.3.3 Transport in Degenerate Band 7.3.4
Insulator-to-Metal Transition 7.4 Minority-Carrier Transport 7.4.1
Minority-Electron Mobility 7.4.2 Minority-Electron Lifetime and Diffusion
Length (a) Quaternary material (b) Solid solution 7.5 Effect of Grain
Boundary 7.6 Proposal: Graded-Absorber Solar Cell Structure 7.7 Proposal:
Controlling Transport Properties of Bulk Material by Heat Treatment
References Appendix A Summary: Physical Properties of CZTS and CZTSe
Appendix B Summary: Physical Properties of c-CdS, w-CdS and ZnO References
Appendix C Optical Constants of Some Cu2?{II?{IV?{VI4 Quaternary
Semiconductors: In Tables References Appendix D Optical Constants of c-CdS,
w-CdS and ZnO References Subject Index
Elements in the Earth's Crust 1.1.1 Chemical Elements 1.1.2 Solar Cells and
Earth-Abundant Materials 1.2 Solar Radiation Spectrum 1.3
Shockley?{Queisser Efficiency Limit 1.4 Fundamental Properties of
Photovoltaic Semiconductor Materials 1.5 Solar Cell Device Characteristics
1.6 Prediction of Physical Properties for Complex Material System 1.6.1 An
Effective-Medium Approximation 1.6.2 An Interpolation Scheme References 2
Structural Properties 2.1 Grimm?{Sommerfeld Rule 2.2 Crystal Structure
2.2.1 Crystal Structure 2.2.2 Theoretical Phase Stability 2.3 Lattice
Constant and Related Parameters 2.3.1 Bulk Material (a) Quaternary material
(b) Solid solution (c) External perturbation effect (d) Heteroepitaxy 2.3.2
Nanocrystalline Material (a) Quaternary material (b) Solid solution 2.4
Structural Phase Transition References 3 Thermal Properties 3.1 Phase
Diagram 3.1.1 Cu2Zn?{IV?{VI4 Quaternary 3.1.2 Cu2Cd?{IV?{VI4 Quaternary
3.1.3 Cu2Hg?{IV?{VI4 Quaternary 3.1.4 Cu2?{II?{IV?{VI4 Solid Solution 3.2
Melting Point 3.3 Specific Heat 3.4 Debye Temperature 3.5 Thermal Expansion
Coefficient 3.6 Thermal Conductivity 3.6.1 Quaternary Material 3.6.2 Alloy
Material (a) Theoretical model (b) Analysis 3.7 Thermal Duffusivity
References and Notes 4 Elastic, Mechanical and Lattice Dynamic Properties
4.1 Elastic Constant 4.1.1 General Remark 4.1.2 Theoretical Value 4.1.3
Yang's Modulus, Poisson's Ratio and Similar 4.1.4 Sound Velocity 4.2
Microhardness 4.3 Lattice Dynamic Properties 4.3.1 Phonon Dispersion
Relation 4.3.2 Raman Scattering: Tetragonal Lattice 4.3.3 Raman Scattering:
Orthorhombic Lattice 4.3.4 Effect of Atomic Mass on Phonon Frequency 4.3.5
Raman Scattering: Solid Solution (a) General remark (b) Experimental data
4.3.6 Raman Scattering: Excitation Wavelength Dependence (a) Theoretical
consideration (b) Experimental data 4.3.7 Far-IR Spectroscopy 4.3.8
External Perturbation Effect (a) Theoretical consideration (b) Experimental
data 4.3.8 Nanocrystalline Material (a) General remark (b) Experimental
data References 5 Electronic Energy-Band Structure 5.1 General Remark 5.1.1
Energy-Band Structure (a) Tetragonal material (b) Orthorhombic material
5.1.2 ?·-Point Energy-Band Scheme 5.1.3 Band-Gap Energy: External
Perturbation and Doping Effects (a) Temperature effect (b) Pressure effect
(c) Doping effect 5.1.4 Effective Mass: External Perturbation and Doping
Effects 5.2 Lowest Indirect and Direct Band-Gap Energies 5.2.1 Quaternary
Material 5.2.2 Solid Solution 5.3 Higher-Lying Band-Gap Energy 5.4 External
Perturbation Effect on the Band-Gap Energy: Experimental Data 5.5 Effective
Mass 5.5.1 Electron Effective Mass 5.5.2 Hole Effective Mass 5.6
Nanocrystalline Band-Gap Energy 5.6.1 Quaternary Material 5.6.2 Solid
Solution 5.7 Heterojunction Band Offset 5.7.1 General Consideration 5.7.2
Theoretical Value 5.7.3 Experimental Value (a) Window/buffer heterojunction
material system (b) Buffer/absorber heterojunction material system (c)
Window/buffer/Cu2?{II?{IV?{VI4 solar cell structure 5.8 Electron Affinity
5.9 Schottky Barrier Height References 6 Optical Properties 6.1 General
Remark 6.1.1 Dielectric Permittivity: Tensor Representation 6.1.2 Optical
Dispersion Relation (a) Basic expression (b) Optical sum rule 6.1.3 Optical
Spectrum: Classification into Several Regions 6.2 The Reststrahlen Region
6.2.1 Static and High-Frequency Dielectric Constants 6.2.2 Reststrahlen
Spectrum (a) Theoretical expression (b) Experimental data 6.3 At or Near
the Fundamental Absorption Edge 6.3.1 Exciton Parameter (a) Theoretical
expression (b) Experimental data 6.3.2 Optical Absorption (a) Free-carrier,
IVB and ICB absorptions (b) At the direct absorption edge: Theoretical
expression (c) At the indirect absorption edge: Theoretical expression (d)
Urbach's tail (e) Experimental data 6.3.3 Refractive Index (a) Theoretical
expression (b) Experimental data 6.4 The Interband Transition Region 6.4.1
Model Dielectric Function 6.4.2 Optical Spectrum and MDF Analysis 6.4.3
Optical Absorption Spectrum 6.4.4 Optical Constant in the 0?n?{?n10000 eV
Spectral Region References 7 Carrier Transport Properties 7.1 Electron
Transport Properties 7.2 Hole Hall Mobility 7.2.1 General Remark 7.2.2
Room-Temperature Value 7.2.3 Temperature Dependence 7.2.4 Effect of
Stoichiometry, Alloying and Foreign Atom Doping (a) Effect of stoichiometry
(b) Effect of alloying (c) Affect of foreign atom doping 7.3 Electrical
Resistivity 7.3.1 Free-Hole Conduction (a) Quaternary material (b) Solid
solution 7.3.2 Hopping Conduction 7.3.3 Transport in Degenerate Band 7.3.4
Insulator-to-Metal Transition 7.4 Minority-Carrier Transport 7.4.1
Minority-Electron Mobility 7.4.2 Minority-Electron Lifetime and Diffusion
Length (a) Quaternary material (b) Solid solution 7.5 Effect of Grain
Boundary 7.6 Proposal: Graded-Absorber Solar Cell Structure 7.7 Proposal:
Controlling Transport Properties of Bulk Material by Heat Treatment
References Appendix A Summary: Physical Properties of CZTS and CZTSe
Appendix B Summary: Physical Properties of c-CdS, w-CdS and ZnO References
Appendix C Optical Constants of Some Cu2?{II?{IV?{VI4 Quaternary
Semiconductors: In Tables References Appendix D Optical Constants of c-CdS,
w-CdS and ZnO References Subject Index
Preface Abbreviations and Acronyms 1 Introduction 1.1 Natural Abundance of
Elements in the Earth's Crust 1.1.1 Chemical Elements 1.1.2 Solar Cells and
Earth-Abundant Materials 1.2 Solar Radiation Spectrum 1.3
Shockley?{Queisser Efficiency Limit 1.4 Fundamental Properties of
Photovoltaic Semiconductor Materials 1.5 Solar Cell Device Characteristics
1.6 Prediction of Physical Properties for Complex Material System 1.6.1 An
Effective-Medium Approximation 1.6.2 An Interpolation Scheme References 2
Structural Properties 2.1 Grimm?{Sommerfeld Rule 2.2 Crystal Structure
2.2.1 Crystal Structure 2.2.2 Theoretical Phase Stability 2.3 Lattice
Constant and Related Parameters 2.3.1 Bulk Material (a) Quaternary material
(b) Solid solution (c) External perturbation effect (d) Heteroepitaxy 2.3.2
Nanocrystalline Material (a) Quaternary material (b) Solid solution 2.4
Structural Phase Transition References 3 Thermal Properties 3.1 Phase
Diagram 3.1.1 Cu2Zn?{IV?{VI4 Quaternary 3.1.2 Cu2Cd?{IV?{VI4 Quaternary
3.1.3 Cu2Hg?{IV?{VI4 Quaternary 3.1.4 Cu2?{II?{IV?{VI4 Solid Solution 3.2
Melting Point 3.3 Specific Heat 3.4 Debye Temperature 3.5 Thermal Expansion
Coefficient 3.6 Thermal Conductivity 3.6.1 Quaternary Material 3.6.2 Alloy
Material (a) Theoretical model (b) Analysis 3.7 Thermal Duffusivity
References and Notes 4 Elastic, Mechanical and Lattice Dynamic Properties
4.1 Elastic Constant 4.1.1 General Remark 4.1.2 Theoretical Value 4.1.3
Yang's Modulus, Poisson's Ratio and Similar 4.1.4 Sound Velocity 4.2
Microhardness 4.3 Lattice Dynamic Properties 4.3.1 Phonon Dispersion
Relation 4.3.2 Raman Scattering: Tetragonal Lattice 4.3.3 Raman Scattering:
Orthorhombic Lattice 4.3.4 Effect of Atomic Mass on Phonon Frequency 4.3.5
Raman Scattering: Solid Solution (a) General remark (b) Experimental data
4.3.6 Raman Scattering: Excitation Wavelength Dependence (a) Theoretical
consideration (b) Experimental data 4.3.7 Far-IR Spectroscopy 4.3.8
External Perturbation Effect (a) Theoretical consideration (b) Experimental
data 4.3.8 Nanocrystalline Material (a) General remark (b) Experimental
data References 5 Electronic Energy-Band Structure 5.1 General Remark 5.1.1
Energy-Band Structure (a) Tetragonal material (b) Orthorhombic material
5.1.2 ?·-Point Energy-Band Scheme 5.1.3 Band-Gap Energy: External
Perturbation and Doping Effects (a) Temperature effect (b) Pressure effect
(c) Doping effect 5.1.4 Effective Mass: External Perturbation and Doping
Effects 5.2 Lowest Indirect and Direct Band-Gap Energies 5.2.1 Quaternary
Material 5.2.2 Solid Solution 5.3 Higher-Lying Band-Gap Energy 5.4 External
Perturbation Effect on the Band-Gap Energy: Experimental Data 5.5 Effective
Mass 5.5.1 Electron Effective Mass 5.5.2 Hole Effective Mass 5.6
Nanocrystalline Band-Gap Energy 5.6.1 Quaternary Material 5.6.2 Solid
Solution 5.7 Heterojunction Band Offset 5.7.1 General Consideration 5.7.2
Theoretical Value 5.7.3 Experimental Value (a) Window/buffer heterojunction
material system (b) Buffer/absorber heterojunction material system (c)
Window/buffer/Cu2?{II?{IV?{VI4 solar cell structure 5.8 Electron Affinity
5.9 Schottky Barrier Height References 6 Optical Properties 6.1 General
Remark 6.1.1 Dielectric Permittivity: Tensor Representation 6.1.2 Optical
Dispersion Relation (a) Basic expression (b) Optical sum rule 6.1.3 Optical
Spectrum: Classification into Several Regions 6.2 The Reststrahlen Region
6.2.1 Static and High-Frequency Dielectric Constants 6.2.2 Reststrahlen
Spectrum (a) Theoretical expression (b) Experimental data 6.3 At or Near
the Fundamental Absorption Edge 6.3.1 Exciton Parameter (a) Theoretical
expression (b) Experimental data 6.3.2 Optical Absorption (a) Free-carrier,
IVB and ICB absorptions (b) At the direct absorption edge: Theoretical
expression (c) At the indirect absorption edge: Theoretical expression (d)
Urbach's tail (e) Experimental data 6.3.3 Refractive Index (a) Theoretical
expression (b) Experimental data 6.4 The Interband Transition Region 6.4.1
Model Dielectric Function 6.4.2 Optical Spectrum and MDF Analysis 6.4.3
Optical Absorption Spectrum 6.4.4 Optical Constant in the 0?n?{?n10000 eV
Spectral Region References 7 Carrier Transport Properties 7.1 Electron
Transport Properties 7.2 Hole Hall Mobility 7.2.1 General Remark 7.2.2
Room-Temperature Value 7.2.3 Temperature Dependence 7.2.4 Effect of
Stoichiometry, Alloying and Foreign Atom Doping (a) Effect of stoichiometry
(b) Effect of alloying (c) Affect of foreign atom doping 7.3 Electrical
Resistivity 7.3.1 Free-Hole Conduction (a) Quaternary material (b) Solid
solution 7.3.2 Hopping Conduction 7.3.3 Transport in Degenerate Band 7.3.4
Insulator-to-Metal Transition 7.4 Minority-Carrier Transport 7.4.1
Minority-Electron Mobility 7.4.2 Minority-Electron Lifetime and Diffusion
Length (a) Quaternary material (b) Solid solution 7.5 Effect of Grain
Boundary 7.6 Proposal: Graded-Absorber Solar Cell Structure 7.7 Proposal:
Controlling Transport Properties of Bulk Material by Heat Treatment
References Appendix A Summary: Physical Properties of CZTS and CZTSe
Appendix B Summary: Physical Properties of c-CdS, w-CdS and ZnO References
Appendix C Optical Constants of Some Cu2?{II?{IV?{VI4 Quaternary
Semiconductors: In Tables References Appendix D Optical Constants of c-CdS,
w-CdS and ZnO References Subject Index
Elements in the Earth's Crust 1.1.1 Chemical Elements 1.1.2 Solar Cells and
Earth-Abundant Materials 1.2 Solar Radiation Spectrum 1.3
Shockley?{Queisser Efficiency Limit 1.4 Fundamental Properties of
Photovoltaic Semiconductor Materials 1.5 Solar Cell Device Characteristics
1.6 Prediction of Physical Properties for Complex Material System 1.6.1 An
Effective-Medium Approximation 1.6.2 An Interpolation Scheme References 2
Structural Properties 2.1 Grimm?{Sommerfeld Rule 2.2 Crystal Structure
2.2.1 Crystal Structure 2.2.2 Theoretical Phase Stability 2.3 Lattice
Constant and Related Parameters 2.3.1 Bulk Material (a) Quaternary material
(b) Solid solution (c) External perturbation effect (d) Heteroepitaxy 2.3.2
Nanocrystalline Material (a) Quaternary material (b) Solid solution 2.4
Structural Phase Transition References 3 Thermal Properties 3.1 Phase
Diagram 3.1.1 Cu2Zn?{IV?{VI4 Quaternary 3.1.2 Cu2Cd?{IV?{VI4 Quaternary
3.1.3 Cu2Hg?{IV?{VI4 Quaternary 3.1.4 Cu2?{II?{IV?{VI4 Solid Solution 3.2
Melting Point 3.3 Specific Heat 3.4 Debye Temperature 3.5 Thermal Expansion
Coefficient 3.6 Thermal Conductivity 3.6.1 Quaternary Material 3.6.2 Alloy
Material (a) Theoretical model (b) Analysis 3.7 Thermal Duffusivity
References and Notes 4 Elastic, Mechanical and Lattice Dynamic Properties
4.1 Elastic Constant 4.1.1 General Remark 4.1.2 Theoretical Value 4.1.3
Yang's Modulus, Poisson's Ratio and Similar 4.1.4 Sound Velocity 4.2
Microhardness 4.3 Lattice Dynamic Properties 4.3.1 Phonon Dispersion
Relation 4.3.2 Raman Scattering: Tetragonal Lattice 4.3.3 Raman Scattering:
Orthorhombic Lattice 4.3.4 Effect of Atomic Mass on Phonon Frequency 4.3.5
Raman Scattering: Solid Solution (a) General remark (b) Experimental data
4.3.6 Raman Scattering: Excitation Wavelength Dependence (a) Theoretical
consideration (b) Experimental data 4.3.7 Far-IR Spectroscopy 4.3.8
External Perturbation Effect (a) Theoretical consideration (b) Experimental
data 4.3.8 Nanocrystalline Material (a) General remark (b) Experimental
data References 5 Electronic Energy-Band Structure 5.1 General Remark 5.1.1
Energy-Band Structure (a) Tetragonal material (b) Orthorhombic material
5.1.2 ?·-Point Energy-Band Scheme 5.1.3 Band-Gap Energy: External
Perturbation and Doping Effects (a) Temperature effect (b) Pressure effect
(c) Doping effect 5.1.4 Effective Mass: External Perturbation and Doping
Effects 5.2 Lowest Indirect and Direct Band-Gap Energies 5.2.1 Quaternary
Material 5.2.2 Solid Solution 5.3 Higher-Lying Band-Gap Energy 5.4 External
Perturbation Effect on the Band-Gap Energy: Experimental Data 5.5 Effective
Mass 5.5.1 Electron Effective Mass 5.5.2 Hole Effective Mass 5.6
Nanocrystalline Band-Gap Energy 5.6.1 Quaternary Material 5.6.2 Solid
Solution 5.7 Heterojunction Band Offset 5.7.1 General Consideration 5.7.2
Theoretical Value 5.7.3 Experimental Value (a) Window/buffer heterojunction
material system (b) Buffer/absorber heterojunction material system (c)
Window/buffer/Cu2?{II?{IV?{VI4 solar cell structure 5.8 Electron Affinity
5.9 Schottky Barrier Height References 6 Optical Properties 6.1 General
Remark 6.1.1 Dielectric Permittivity: Tensor Representation 6.1.2 Optical
Dispersion Relation (a) Basic expression (b) Optical sum rule 6.1.3 Optical
Spectrum: Classification into Several Regions 6.2 The Reststrahlen Region
6.2.1 Static and High-Frequency Dielectric Constants 6.2.2 Reststrahlen
Spectrum (a) Theoretical expression (b) Experimental data 6.3 At or Near
the Fundamental Absorption Edge 6.3.1 Exciton Parameter (a) Theoretical
expression (b) Experimental data 6.3.2 Optical Absorption (a) Free-carrier,
IVB and ICB absorptions (b) At the direct absorption edge: Theoretical
expression (c) At the indirect absorption edge: Theoretical expression (d)
Urbach's tail (e) Experimental data 6.3.3 Refractive Index (a) Theoretical
expression (b) Experimental data 6.4 The Interband Transition Region 6.4.1
Model Dielectric Function 6.4.2 Optical Spectrum and MDF Analysis 6.4.3
Optical Absorption Spectrum 6.4.4 Optical Constant in the 0?n?{?n10000 eV
Spectral Region References 7 Carrier Transport Properties 7.1 Electron
Transport Properties 7.2 Hole Hall Mobility 7.2.1 General Remark 7.2.2
Room-Temperature Value 7.2.3 Temperature Dependence 7.2.4 Effect of
Stoichiometry, Alloying and Foreign Atom Doping (a) Effect of stoichiometry
(b) Effect of alloying (c) Affect of foreign atom doping 7.3 Electrical
Resistivity 7.3.1 Free-Hole Conduction (a) Quaternary material (b) Solid
solution 7.3.2 Hopping Conduction 7.3.3 Transport in Degenerate Band 7.3.4
Insulator-to-Metal Transition 7.4 Minority-Carrier Transport 7.4.1
Minority-Electron Mobility 7.4.2 Minority-Electron Lifetime and Diffusion
Length (a) Quaternary material (b) Solid solution 7.5 Effect of Grain
Boundary 7.6 Proposal: Graded-Absorber Solar Cell Structure 7.7 Proposal:
Controlling Transport Properties of Bulk Material by Heat Treatment
References Appendix A Summary: Physical Properties of CZTS and CZTSe
Appendix B Summary: Physical Properties of c-CdS, w-CdS and ZnO References
Appendix C Optical Constants of Some Cu2?{II?{IV?{VI4 Quaternary
Semiconductors: In Tables References Appendix D Optical Constants of c-CdS,
w-CdS and ZnO References Subject Index