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This book is focused on the spintronic properties of III-V nitride semiconductors. Particular attention is paid to the comparison between zinc blende GaAs- and wurtzite GaN-based structures, where the Rashba spin-orbit interaction plays a crucial role in voltage-controlled spin engineering. The book also deals with topological insulators, a new cla

Produktbeschreibung
This book is focused on the spintronic properties of III-V nitride semiconductors. Particular attention is paid to the comparison between zinc blende GaAs- and wurtzite GaN-based structures, where the Rashba spin-orbit interaction plays a crucial role in voltage-controlled spin engineering. The book also deals with topological insulators, a new cla

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Autorenporträt
Vladimir Litvinov is a principal scientist at Sierra Nevada Corporation, Irvine, California, since 1999. He holds PhD and Doctor of Science degrees in physics from Chernivtsi National University (Ukraine) and the Institute of Physics, Estonian Academy of Sciences (since 1996 Institute of Physics, University of Tartu), respectively. From 1978 to 1996, he was a member and then head of the theoretical lab at the Institute of Materials Science, National Academy of Sciences of Ukraine. From 1996 to 1999, he was a senior research associate at the Center of Quantum Devices, Electrical and Computer Engineering Department, Northwestern University, Evanston, Illinois. His research interests include solid-state and semiconductor physics, optoelectronic devices, spintronics, and millimeter-wave scanning antennas.