Semiconductor Devices and Technologies for Future Ultra Low Power Electronics (eBook, PDF)

Redaktion: Nirmal, D.; Fay, Patrick J.; Ajayan, J.

• Format: PDF

Produktbeschreibung

The book covers fundamentals and significance of 2D materials, and related semiconductor transistor technologies for next generation ultra-low power applications. It comprehensively covers advanced low power transistors and flexible transistors for future ultra-low power applications owing to their better subthreshold swing and scalability.

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Produktdetails

• Verlag: Taylor & Francis
• Seitenzahl: 302
• Erscheinungstermin: 9. Dezember 2021
• Englisch
• ISBN-13: 9781000475340
• Artikelnr.: 62876796

Autorenporträt

D. Nirmal is presently working as an Associate Professor and Head in the Department of Electronics and Communication engineering. His research interests includes Nanoelectronics, 1D/2D Materials, Carbon nanotubes, GaN Technology, Device and Circuit Simulation - GSL, Sensors, Nanoscale device design and modelling. J. Ajayan is an Associate Professor in the Department of Electronics and Communication Engineering at SR University, Telangana, India. His areas of interest are microelectronics, semiconductor devices, nanotechnology, RF integrated circuits and photovoltaics. Patrick Fay is currently a Professor with the Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, USA. He established the High Speed Circuits and Devices Laboratory, Notre Dame, and oversaw the design, construction, and commissioning of the 9000-ft2 class 100 cleanroom housed in Stinson-Remick Hall at Notre Dame. He has served as the Director of this facility since 2003.

Inhaltsangabe

1. An Introduction to Nanoscale CMOS Technology Transistor. 2. High
Performance Tunnel Field Effect Transistor (TFET) for Future Low Power
Applications. 3. Ultra Low Power III-V Tunnel Field Effect Transistors. 4.
Performance Analysis of Carbon Nanotube and Graphene Tunnel Field Effect
Transistors. 5. Characterization of Silicon FinFETs Under Nanoscale
Dimension. 6. Germenium or SiGe FinFETs for Enhanced Performance in Low
Power Applications. 7. Switching Performance Analysis of III-V FinFET. 8.
Negative Capacitance Field Effect Transistors to Address the Fundamental
Limitations in Technology Scaling. 9. Recent Trends in Compact Modeling of
Negative Capacitance Field Effect Transistors. 10. Fundamentals of 2D
Materials. 11. Two-Dimensional Transition Metal Dichalcogenide (TMD)
Materials in Field Effect Transistor (FET) Devices for Low Power
Applications.