C. Jayant Praharaj

Group III-Nitride Semiconductor Optoelectronics (eBook, ePUB)

• Format: ePub

Produktbeschreibung

Group III-Nitride Semiconductor Optoelectronics Discover a comprehensive exploration of the foundations and frontiers of the optoelectronics technology of group-III nitrides and their ternary alloys In Group III-Nitride Semiconductor Optoelectronics, expert engineer Dr. C. Jayant Praharaj delivers an insightful overview of the optoelectronic applications of group III-nitride semiconductors. The book covers all relevant aspects of optical emission and detection, including the challenges of optoelectronic integration and a detailed comparison with other material systems. The author discusses band structure and optical properties of III-nitride semiconductors, as well as the properties of their low-dimensional structures. He also describes different optoelectronic systems such as LEDs, lasers, photodetectors, and optoelectronic integrated circuits. Group III-Nitride Semiconductor Optoelectronics covers both the fundamentals of the field and the most cutting-edge discoveries. Chapters provide thorough connections between theory and experimental advances for optoelectronics and photonics. Readers will also benefit from: * A thorough introduction to the band structure and optical properties of group III-nitride semiconductors * Comprehensive explorations of growth and doping of group III-nitride devices and heterostructures * Practical discussions of the optical properties of low dimensional structures in group III-nitrides * In-depth examinations of lasers and light-emitting diodes, other light-emitting devices, photodetectors, photovoltaics, and optoelectronic integrated circuits * Concise treatments of the quantum optical properties of nitride semiconductor devices Perfect for researchers in electrical engineering, applied physics, and materials science, Group III-Nitride Semiconductor Optoelectronics is also a must-read resource for graduate students and industry practitioners in those fields seeking a state-of-the-art reference on the optoelectronics technology of group III-nitrides.

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Produktdetails

• Verlag: John Wiley & Sons
• Seitenzahl: 192
• Erscheinungstermin: 11. Oktober 2023
• Englisch
• ISBN-13: 9781119708599
• Artikelnr.: 69183191

Autorenporträt

C. Jayant Praharaj, PhD, is a Research and Development Scientist at Band Photonics Materials in California. He received his PhD in Electrical and Computer Engineering from Cornell University in 2004. He has authored several research articles in peer-reviewed journals and conference proceedings.

Inhaltsangabe

Preface ix

1 Introduction 1

2 Band Structure and Optical Properties of Group III-Nitride Semiconductors 3

Crystal Symmetry (Wurtzite and Cubic Phases) 3

Lattice Periodicity and Crystal Hamiltonian 4

Bloch's Theorem and Nature of Electron States 4

Quantum Mechanical Properties Corresponding to Bloch States 5

Light-Matter Interaction in Semiconductors 7

Spontaneous and Piezoelectric Polarization 11

Phonon Spectrum 13

Scattering Mechanisms 13

Donors and Deep Acceptors 17

3 Growth and Doping of Group III-Nitride Devices 19

Major Epitaxial Growth Methods 19

In Situ and Implant Doping 31

Dislocations and Point Defects 31

Dopant-induced Defects 31

Substrates and Growth 31

Gallium Nitride Growth on Silicon Substrates 32

4 Optical Properties of Low-dimensional Structures in Group III Nitrides 39

Quantum Wells, Quantum Wires, and Quantum Dots 39

The k.p Method 43

Crystal Symmetry and Low-dimensional Structures 50

Alloy Disorder and Density Functional Theory Electronic Structure Calculation 51

Deviations from Charge Neutrality and Effect on Electronic Structure 54

Polarization Engineering Using Quaternaries and Complex Structures 55

Dislocations in Low-dimensional Structures and Carrier Dynamics 57

Disorder, Carrier Localization, and Effect on Recombination and Red Shifts 57

5 Light-emitting Diodes and Lasers 67

Blue, Green, and Ultraviolet (UV) LEDs 67

Light-emitting Diode Basic Operating Principles 71

Blue, Green, and UV Lasers 72

Blue, Green, and Device Laser Materials - Device Considerations 78

Nanowire microLEDs 80

LED Quantum Efficiencies and Laser Threshold Currents in Quantum Wires and Quantum Dots 80

Auger Recombination and Efficiency Droop in Group III-Nitride LEDs 82

Dislocations in Low-dimensional Structures and Carrier Dynamics 86

Disorder, Carrier Localization, and Effect on Recombination and Red Shifts 87

Staggered Quantum-well InGaN Laser Characteristics 87

Non-polar Plane Quantum-well InGaN LEDs and Lasers 89

Semi-polar Plane Quantum-well InGaN LEDs and Lasers 90

p-Type Ohmic Contacts and Efficiency of LEDs and Lasers 91

Vertical Cavity Surface Emitting Lasers 93

Distributed Feedback Lasers 94

Plasmonic Nanolasers 94

Indium Gallium Nitride LEDs and Lasers on Si Substrates 95

6 Inter Sub-band Devices 103

Quantum Cascade Lasers 103

Infrared Photodetectors 103

7 Photodetectors 111

Ultraviolet Photodetectors 111

Complex Dielectric Function 111

Basic Principle of Operation 113

Metal-Semiconductor-Metal (MSM) Photodetector 115

Solar-blind Group III-Nitride UV Photodetectors 118

p-i-n Photodiodes 118

Schottky Barrier Photodiodes 123

Heterogenous Photodiodes with Group III Nitrides and Transition Metal Dichalcogenides 123

Alloy Nitrides and Spectral Response 124

Photodetectors and Substrate Engineering 125

8 Photovoltaics and Energy Conversion Devices 129

Indium Gallium Nitride Material System for Solar Cells 129

Basic Solar Cell Physics - p-n Junction Solar Cells 129

Intermediate Band Solar Cells 137

Substrate Effects on InGaN Solar Cells 139

Ohmic Contact Effects in p-n and p-i-n InGaN Solar Cells 140

Plasmonically Enhanced Solar Cells 140

Solar Concentrating Photovoltaics