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This eighth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VII (Volumes 230-232) and the end of 2005 (allowing for vagaries of journal availability).In addition to the abstracts, the issue includes invited original papers on the topics of "e;The Size Distribution of Defect Clusters in n-Si Irradiated with Fast Neutrons"e; (A.P.Dolgolenko & G.P.Gaidar), "e;Role of Diffusion in the Shaping of the High-Absorption State in a Resonatorless Exciton Bistable System"e; (Y.V.Gudyma & I.V.Kruglenko), "e;On the Interaction of Dislocations with Impurities in Silicon"e; (D.Cavalcoli & A.Cavallini), "e;Oxygen Enrichment of Silicon Wafer by Ion Implantation Method and Fabrication of Surface Barrier Detectors"e; (S.K.Chaudhuri et al.), "e;DFT Analysis of the Indium-Antimony-Vacancy Cluster in Silicon"e; (M.M.De Souza & J.Goss), "e;Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition"e; (H.H.Radamson & J.Hallstedt), "e;Identification of the Nature of Deep Trap States in Molecular Beam Epitaxially Grown Gallium Arsenide"e; (N.C.Halder).These 7 invited papers and 625 selected abstracts together provide an up-to-date insight into current and future trends in semiconductor theory, processing and applications as related to diffusional phenomena and defect behavior.
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