VLSI and Post-CMOS Electronics
Design, Modelling and Simulation
Herausgeber: Dhiman, Rohit; Chandel, Rajeevan
VLSI and Post-CMOS Electronics
Design, Modelling and Simulation
Herausgeber: Dhiman, Rohit; Chandel, Rajeevan
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VLSI and Post-CMOS Electronics is a useful reference guide for researchers, engineers and advanced students working in the area of design and modelling of VLSI and post-CMOS devices and their circuits.
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VLSI and Post-CMOS Electronics is a useful reference guide for researchers, engineers and advanced students working in the area of design and modelling of VLSI and post-CMOS devices and their circuits.
Produktdetails
- Produktdetails
- Verlag: Institution of Engineering & Technology
- Seitenzahl: 368
- Erscheinungstermin: 25. November 2019
- Englisch
- Abmessung: 239mm x 163mm x 20mm
- Gewicht: 726g
- ISBN-13: 9781839530517
- ISBN-10: 1839530510
- Artikelnr.: 58408585
- Verlag: Institution of Engineering & Technology
- Seitenzahl: 368
- Erscheinungstermin: 25. November 2019
- Englisch
- Abmessung: 239mm x 163mm x 20mm
- Gewicht: 726g
- ISBN-13: 9781839530517
- ISBN-10: 1839530510
- Artikelnr.: 58408585
1. Section I: Low voltage and low power VLSI design
* Chapter 1: Low-voltage analog signal processing
* Chapter 2: Negative bias temperature instability (NBTI) aware low
leakage circuit design
* Chapter 3: Low-voltage, low-power SRAM circuits using subthreshold
design technique
* Chapter 4: Design and analysis of memristor-based DRAM cell for
low-power application
* Chapter 5: Design of a novel tunnel FET for low-power applications
* Chapter 6: Composite PFD based low-power, low noise, fast lock-in PLL
2. Section II: Modelling and simulation for post-CMOS device and circuit
design
* Chapter 7: Emerging devices beyond CMOS: fundamentals, promises and
challenges
* Chapter 8: Two-dimensional material-based field-effect transistors
for post-silicon electronics
* Chapter 9: Theory and modelling of spin-transfer-torque based
electronic devices
* Chapter 10: Spintronics memory and logic: an efficient alternative to
CMOS technology
* Chapter 11: Tunneling field effect transistors for energy efficient
digital, RF and power management circuit designs enabling IoT edge
computing platforms
* Chapter 12: High performing metal-oxide semiconductor thin-film
transistors
* Chapter 13: CNTFETs: modelling and circuit design
* Chapter 1: Low-voltage analog signal processing
* Chapter 2: Negative bias temperature instability (NBTI) aware low
leakage circuit design
* Chapter 3: Low-voltage, low-power SRAM circuits using subthreshold
design technique
* Chapter 4: Design and analysis of memristor-based DRAM cell for
low-power application
* Chapter 5: Design of a novel tunnel FET for low-power applications
* Chapter 6: Composite PFD based low-power, low noise, fast lock-in PLL
2. Section II: Modelling and simulation for post-CMOS device and circuit
design
* Chapter 7: Emerging devices beyond CMOS: fundamentals, promises and
challenges
* Chapter 8: Two-dimensional material-based field-effect transistors
for post-silicon electronics
* Chapter 9: Theory and modelling of spin-transfer-torque based
electronic devices
* Chapter 10: Spintronics memory and logic: an efficient alternative to
CMOS technology
* Chapter 11: Tunneling field effect transistors for energy efficient
digital, RF and power management circuit designs enabling IoT edge
computing platforms
* Chapter 12: High performing metal-oxide semiconductor thin-film
transistors
* Chapter 13: CNTFETs: modelling and circuit design
1. Section I: Low voltage and low power VLSI design
* Chapter 1: Low-voltage analog signal processing
* Chapter 2: Negative bias temperature instability (NBTI) aware low
leakage circuit design
* Chapter 3: Low-voltage, low-power SRAM circuits using subthreshold
design technique
* Chapter 4: Design and analysis of memristor-based DRAM cell for
low-power application
* Chapter 5: Design of a novel tunnel FET for low-power applications
* Chapter 6: Composite PFD based low-power, low noise, fast lock-in PLL
2. Section II: Modelling and simulation for post-CMOS device and circuit
design
* Chapter 7: Emerging devices beyond CMOS: fundamentals, promises and
challenges
* Chapter 8: Two-dimensional material-based field-effect transistors
for post-silicon electronics
* Chapter 9: Theory and modelling of spin-transfer-torque based
electronic devices
* Chapter 10: Spintronics memory and logic: an efficient alternative to
CMOS technology
* Chapter 11: Tunneling field effect transistors for energy efficient
digital, RF and power management circuit designs enabling IoT edge
computing platforms
* Chapter 12: High performing metal-oxide semiconductor thin-film
transistors
* Chapter 13: CNTFETs: modelling and circuit design
* Chapter 1: Low-voltage analog signal processing
* Chapter 2: Negative bias temperature instability (NBTI) aware low
leakage circuit design
* Chapter 3: Low-voltage, low-power SRAM circuits using subthreshold
design technique
* Chapter 4: Design and analysis of memristor-based DRAM cell for
low-power application
* Chapter 5: Design of a novel tunnel FET for low-power applications
* Chapter 6: Composite PFD based low-power, low noise, fast lock-in PLL
2. Section II: Modelling and simulation for post-CMOS device and circuit
design
* Chapter 7: Emerging devices beyond CMOS: fundamentals, promises and
challenges
* Chapter 8: Two-dimensional material-based field-effect transistors
for post-silicon electronics
* Chapter 9: Theory and modelling of spin-transfer-torque based
electronic devices
* Chapter 10: Spintronics memory and logic: an efficient alternative to
CMOS technology
* Chapter 11: Tunneling field effect transistors for energy efficient
digital, RF and power management circuit designs enabling IoT edge
computing platforms
* Chapter 12: High performing metal-oxide semiconductor thin-film
transistors
* Chapter 13: CNTFETs: modelling and circuit design