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Label-free Biosensors: Thin-film Bulk Acoustic Resonators45,99 €![On Figures of Equilibrium of Rotating Masses of Fluid]( "On Figures of Equilibrium of Rotating Masses of Fluid")
On Figures of Equilibrium of Rotating Masses of Fluid12,90 €![Crystallization of Polypeptides in Thin Films: Structures and Patterns]( "Crystallization of Polypeptides in Thin Films: Structures and Patterns")
Crystallization of Polypeptides in Thin Films: Structures and Patterns39,99 €![Phase-field modeling of multi-domain evolution in ferromagnetic shape memory alloys and of polycrystalline thin film growth]( "Phase-field modeling of multi-domain evolution in ferromagnetic shape memory alloys and of polycrystalline thin film growth")
Phase-field modeling of multi-domain evolution in ferromagnetic shape memory alloys and of polycrystalline thin film growth44,00 €![Nanoscale investigation of potential distribution in operating Cu(In,Ga)Se2 thin-film solar cells]( "Nanoscale investigation of potential distribution in operating Cu(In,Ga)Se2 thin-film solar cells")
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Thin Film Physics and Devices: Fundamental Mechanism, Materials and Applications for Thin Films135,99 €
Prediction and analysis of complex industrial processes depend on accurate modelling of physical phenomena. One particular group of them, free-surface liquid film flows on spinning discs, forms a central piece of many industrial processes, for example a wet chemical wafer etching, a coating etc. This work presents a series of numerical studies of the film flow with an impinging jet on rotating discs which is the basis for a high performance simulation tool. Numerical studies based on the Volume-of-Fluid (VoF) method were performed and evaluated against reported experimental data. The conclusion drawn is that a transient two-phase 3D free-surface VoF-simulation is impractical for an industrial use due to time constraints. A thin film model based on an integral method is proposed as a possible remedy. The model was implemented in the open-source software toolkit OpenFOAM using the Finite Area method. The approach is validated with the ANSYS Fluent software and its VoF-implementation. An extension of the model with a simple diffusion-controlled chemistry model for a wet chemical etching of silicon wafers is presented.