Manijeh Razeghi

The MOCVD Challenge

Volume 2: A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications

• Gebundenes Buch

Produktbeschreibung

This second volume focuses on MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. Coverage begins with III-V compounds and devices and growth techniques for multilayers and heterostructures. The book then details how an MOCVD system works and how design affects material growth and sourcing of precursor materials. It also examines ^Iin- and ^Iex-situ growth techniques and the GaInPGaAs system, including optical investigations of quantum wells and superlattices. The book concludes with a discussion of the current use, novel developments, and future potential for optical devices, GaAs-based lasers and heterojunctions, and optoelectronic integrated circuits.

Produktdetails

• Verlag: CRC Press
• Seitenzahl: 444
• Erscheinungstermin: 1. Januar 1995
• Englisch
• Abmessung: 234mm x 156mm x 25mm
• Gewicht: 816g
• ISBN-13: 9780750303095
• ISBN-10: 0750303093
• Artikelnr.: 23819967

Autorenporträt

Manijeh Razeghi

Inhaltsangabe

Preface. Foreword. Introduction. Introduction to semiconductor compounds.
MOCVD growth technique. ^IIn-situ characterization during MOCVD. ^IEx-situ
characterization techniques. MOCVD growth of GaAs layers. Growth and
characterization of the GaInP-GaAs system. Optical devices. GaAs-based
lasers. GaAs-based heterojunction electron devices grown by MOCVD.
Optoelectronic integrated circuits (OEICs). Appendices. Effect of substrate
miscut on the measured superlattice period. Optimization of thickness and
In composition of InGaAs well for 980 nm lasers. Energy levels and laser
gains in a quantum well (GaInAsP): the 'effective mass approximation'.
Luttinger-Kohn Hamiltonian. Infrared detectors. Index.