Structural, Optical and Spectral Behaviour of InAs-based Quantum Dot Heterostructures - Sengupta, Saumya;Chakrabarti, Subhananda
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This book explores the effects of growth pause or ripening time on the properties of quantum dots(QDs). It covers the effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs. The effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs are discussed. The book offers insight into InAs/GaAs bilayer QD heterostructures with very thin spacer layers and discusses minimum spacer thickness required to grow electronically coupled bilayer QD heterostructures. These techniques make bilayer QD heterostructures a better…mehr

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Produktbeschreibung
This book explores the effects of growth pause or ripening time on the properties of quantum dots(QDs). It covers the effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs. The effects of post-growth rapid thermal annealing (RTA) treatment on properties of single layer QDs are discussed. The book offers insight into InAs/GaAs bilayer QD heterostructures with very thin spacer layers and discusses minimum spacer thickness required to grow electronically coupled bilayer QD heterostructures. These techniques make bilayer QD heterostructures a better choice over the single layer and uncoupled multilayer QD heterostructure. Finally, the book discusses sub-monolayer (SML) growth technique to grow QDs. This recent technique has been proven to improve the device performance significantly. The contents of this monograph will prove useful to researchers and professionals alike.
Autorenporträt
Saumya Sengupta received his Bachelor of Science degree in Physics (Honors) from University of Calcutta, India in 2006, Master of Science degree in Applied Physics from Indian School of Mines University, India in 2008 and Ph.D. degree from Indian Institute of Technology Bombay, India in 2014. He has been a post-doctoral research fellow with the Northwestern University, U.S. from 2014 to 2016. His research interests include growth and characterization of novel III-V semiconductor materials by using Molecular Beam Epitaxy system for various optoelectronics applications. He is also involved into the characterization of optoelectronics devices. He has authored more than twenty international publications for various journals and conferences. Subhananda Chakrabarti received his M.Sc. and Ph.D. degrees from the Department of Electronic Science, University of Calcutta, Kolkata, India in 1993 and 2000, respectively. He was a Lecturer in the Dept. of Physics, St. Xavier's College, Kolkata. He has been a Senior Research Fellow with the University of Michigan, Ann Arbor, from 2001 to 2005, a Senior Researcher with Dublin City University, Dublin City, Ireland, from 2005 to 2006, and a Senior Researcher (RA2) with the University of Glasgow, Glasgow, U.K., from 2006 to 2007. He joined as an Assistant Professor in the Department of Electrical Engineering, IIT Bombay, Mumbai, India, in 2007. Presently, he is a Professor in the same department. He is a Fellow of the Institution of Electrical and Telecommunication Engineers (IETE) India and also a Member of the IEEE, MRS USA, SPIE USA etc. He is the 2016 medal recipient of the Materials Research Society of India and was also awarded the 2016 NASI-Reliance Industries Platinum Jubilee Award for Application Oriented Innovations in Physical Sciences. He serves as an Editor of the IEEE Journal of Electron Device Society. He has authored more than 250 papers in international journals and conferences. He has alsoco-authored a couple of book chapters on intersubband quantum dot detectors. Dr. S. Chakrabarti serves as reviewer for a number of international journals of repute such as Applied Physics Letters, Nature Scientific Reports, IEEE Photonics Technology Letters, IEEE Journal of Quantum Electronics, Journal of Alloys and Compound,  Material Research Bulletin etc. His research interests lie in compound  (III-V and II-VI) semiconductor based optoelectronic materials and devices.