Based on 3D process and device simulations with mechanical stress simulations by finite element techniques, this book explains performance assessment of nanoscale devices with strained SiGe and other stressors. It explains the process-induced stress transfer and developments at 7nm technology and below node in the area of strain-engineered devices.
Based on 3D process and device simulations with mechanical stress simulations by finite element techniques, this book explains performance assessment of nanoscale devices with strained SiGe and other stressors. It explains the process-induced stress transfer and developments at 7nm technology and below node in the area of strain-engineered devices.
Professor Chinmay K. Maiti, PhD is an Ex-Professor and Ex-Head of Department from Indian Institute of Technology (IIT) - Kharagpur, India. He then joined the SOA University, Bhubaneswar in May 2015 as a Professor, where he is now on a Visiting Assignment. He is interested in strain-engineering in nanodevices, flexible electronics, and semiconductor device/process simulation research, and microelectronics education. He has published several monographs in Silicon-Germanium, heterostructure-Silicon, and Technology CAD areas. He has edited the "Selected Works of Professor Herbert Kroemer", World Scientific, Singapore, 2008.
Inhaltsangabe
Chapter 1. Introduction Chapter 2. Simulation Environment Chapter 3. Stress Generation Techniques in CMOS Technology Chapter 4. Electronic Properties of Engineered Substrates Chapter 5. Bulk-Si FinFETs Chapter 6. Strain-Engineered FinFETs at NanoScale Chapter 7. Technology CAD of III-Nitride Based Devices Chapter 8. Strain-Engineered SiGe Channel TFT for Flexible Electronics