Spectral-luminescence properties of epitaxial films
Cerium-doped gadolinium gallium garnet produced by liquid phase epitaxy
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Monocrystalline films grown by liquid-phase epitaxy from supercooled solution-melt are the only artificial materials into which about half of elements from D.I. Mendeleev table can be introduced as isomorphic substitutions. In connection with a successfully solved problem of creating memory devices without mechanically moving parts, the technology of producing substrates based on gadolinium-gallium garnet (GGG) single crystals for growing epitaxial garnet films on them was developed. Different single crystals with garnet structure are used as substrates for epitaxial film growth. In particular...
Monocrystalline films grown by liquid-phase epitaxy from supercooled solution-melt are the only artificial materials into which about half of elements from D.I. Mendeleev table can be introduced as isomorphic substitutions. In connection with a successfully solved problem of creating memory devices without mechanically moving parts, the technology of producing substrates based on gadolinium-gallium garnet (GGG) single crystals for growing epitaxial garnet films on them was developed. Different single crystals with garnet structure are used as substrates for epitaxial film growth. In particular, epitaxial films grown on yttrium-aluminum garnet substrates doped with cerium ions are shown to have fast luminescence attenuation kinetics (less than 30 ns) and are promising for scintillator development. The aim of this work was to study spectral-luminescent properties of epitaxial films of gadolinium gallium garnet with different concentration of Ce3+ ion
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