Jie Cheng

Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect

• Gebundenes Buch

Produktbeschreibung

This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO 4 -based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.

Produktdetails

• Springer Theses
• Verlag: Springer / Springer Nature Singapore / Springer, Berlin
• Artikelnr. des Verlages: 978-981-10-6164-6
• 1st ed. 2018
• Seitenzahl: 156
• Erscheinungstermin: 18. September 2017
• Englisch
• Abmessung: 241mm x 160mm x 15mm
• Gewicht: 350g
• ISBN-13: 9789811061646
• ISBN-10: 9811061645
• Artikelnr.: 48668051

Inhaltsangabe

Introduction.- Material Removal Mechanism of Cu in KIO 4 -based Slurry.- Material Removal Mechanism of Ru in KIO 4 -based Slurry.- Tribocorrosion Investigations of Cu/Ru Interconnect Structure during CMP.- Micro-galvanic Corrosion of Cu/Ru Couple in KIO 4 Solution.- Galvanic Corrosion Inhibitors for Cu/Ru Couple During Chemical Mechanical Polishing of Ru.- Synergetic Effect of Potassium Molybdate and Benzotriazole on the CMP of Ru and Cu in KIO 4 -based Slurry.- Conclusions and Recommendations.