Reinhard Krause-Rehberg, Hartmut S. Leipner

Positron Annihilation in Semiconductors

Defect Studies

• Broschiertes Buch

Produktbeschreibung

The subject of this book is the investigation of lattice imperfections in semiconductors by means of positron annihilation. A comprehensive review is given of the different positron techniques, whose application to various kinds of defects, e.g. vacancies, impurity-vacancy complexes and dislocations, is described. The sensitivity range of positron annihilation with respect to the detection of these defects is compared to that of other defect-sensitive methods. The most prominent results obtained with positrons in practically all important semiconductors are reviewed. A special chapter of the book deals with positron annihilation as a promising tool for many technological purposes. The theoretical background necessary to understand the experimental results is explained in detail.

Produktdetails

• Springer Series in Solid-State Sciences 127
• Verlag: Springer / Springer Berlin Heidelberg / Springer, Berlin
• Artikelnr. des Verlages: 978-3-642-08403-4
• Softcover reprint of hardcover 1st ed. 1999
• Seitenzahl: 400
• Erscheinungstermin: 1. Dezember 2010
• Englisch
• Abmessung: 235mm x 155mm x 22mm
• Gewicht: 610g
• ISBN-13: 9783642084034
• ISBN-10: 3642084036
• Artikelnr.: 32079517

Autorenporträt

The book is written not only for specialists in positron annihilation but for all scientists, technicians, and students who are interested in defects in semiconductors. It explains in detail the theoretical basics necessary to understand the experimental results presented.

Inhaltsangabe

1 Introduction.- 2 Experimental Techniques.- 3 Basics of Positron Annihilation in Semiconductors.- 4 Defect Characterization in Elemental Semiconductors.- 5 Defect Characterization in III V Compounds.- 6 Defect Characterization in II VI Compounds.- 7 Defect Characterization in Other Compounds.- 8 Applications of Positron Annihilation in Defect Engineering.- 9 Comparison of Positron Annihilation with Other Defect-Sensitive Techniques.- A1 Semiconductor Data.- A2 Trapping Model Equations.- References.