Randall M. Feenstra, Colin E. C. Wood

Porous Silicon Carbide and Gallium Nitride

Epitaxy, Catalysis, and Biotechnology Applications

• Gebundenes Buch

Produktbeschreibung

Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more

Produktdetails

• Verlag: Wiley & Sons
• 1. Auflage
• Seitenzahl: 332
• Erscheinungstermin: 1. Mai 2008
• Englisch
• Abmessung: 235mm x 162mm x 24mm
• Gewicht: 620g
• ISBN-13: 9780470517529
• ISBN-10: 0470517522
• Artikelnr.: 23523304

Autorenporträt

Randall M. Feenstra is professor in the Department of Physics at Carnegie Mellon University Pittsburgh (USA). He gained his PhD in applied physics at the California Institute of Technology (USA). His research interests include atomic structure, electronic spectroscopy of semiconductor materials and heterostructures, growth of semiconductor thin films by molecular beam epitaxy, and scanning probe microscopy. He has received awards from the Alexander von Humboldt Foundation, the Peter Mark Memorial Award of the American Vacuum Society and the IBM Outstanding Innovation Award. He has also been the co-organizer of the symposium on GaN and Related Alloys at the MRS Fall Meeting, has been part of the organizing committee for the Electronic Materials Conference, has been a member of the Organizing Committee and Conference Chair for the Conference on the Physics and Chemistry of Semiconductor Interfaces. Dr. Colin E. C. Wood has a PhD in physical chemistry from Nottingham University (UK). He has substantial industrial and academic experience including as senior physicist at the Philips Research Laboratory in Salford (UK), Senior Research Associate at Cornell University (USA), Assistant Director at GEC Hirst Research Centre Wembley (UK), COO at Northeast Semiconductor Inc., Ithaca (USA) and Research Professor at University of Maryland (USA). He is a Founder Member of the Cornell Sub-Micron Center (NRRFS now NNF) and a Founder Member of the UK Low-Dimensional Solids Programme. His awards include the Patterson Medal from the Institute of Physics (UK).

Inhaltsangabe

1. Porous SiC Preparation, Characterization and Morphology 1.1 Introduction
1.2 Triangular Porous Morphology in n-type 4H-SiC 1.3 Nano-columnar Pore
Formation in 6H SiC 1.4 Summary Acknowledgements References 2. Processing
Porous SiC: Diffusion, Oxidation, Contact Formation 2.1 Introduction 2.2
Formation of Porous Layer 2.3 Diffusion in Porous SiC 2.4 Oxidation 2.5
Contacts to Porous SiC Acknowledgments References 3. Growth of SiC on
Porous SiC Buffer Layers 3.1 Introduction 3.2 SiC CVD Growth 3.3 Growth of
3C-SiC on porous Si via Cold-Wall Epitaxy 3.4 Growth of 3C-SiC on Porous
3C-SiC 3.5 Growth of 4H-SiC on Porous 4H-SiC 3.6 Conclusion
Acknowledgements References 4. Preparation and Properties of Porous GaN
Fabricated by Metal-Assisted Electroless Etching 4.1 Introduction 4.2
Creation of Porous GaN by Electroless Etching 4.3 Morphology
Characterization 4.4 Luminescence of Porous GaN 4.5 Raman Spectroscopy of
Porous GaN 4.6 Summary and Conclusions Acknowledgments References 5. Growth
of GaN on Porous SiC by Molecular Beam Epitaxy 5.1 Introduction 5.2
Morphology and Preparation of Porous SiC substrates 5.3 MBE growth of GaN
on Porous SiC Substrates 5.4 Summary Acknowledgments References 6. GaN
Lateral Epitaxy Growth Using Porous SiNx, TiNx and SiC 6.1 Introduction 6.2
Epitaxy of GaN on Porous SiNx Network 6.3 Epitaxial Lateral Overgrowth of
GaN on Porous TiN 6.4 Growth of GaN on Porous SiC Acknowledgements
References 7. HVPE Growth of GaN on Porous SiC substrates 7.1 Introduction
7.2 Porous Si Substrate Fabrication and Properties 7.3 Epitaxial Growth of
GaN Films on Porous SiC Substrates Summary References 8. Dislocation
Mechanisms in GaN Films Grown on Porous Substrates or Interlayers 8.1
Introduction 8.2 Extended Defects In Epitaxially Grown GaN Thin Layers 8.3
Dislocation Mechanisms in Conventional Lateral Epitaxy Overgrowth of GaN
8.4 Growth of GaN on Porous SiC Substrates 8.5 Growth of GaN on Porous SiN
and TiN Interlayers 8.6 Summary Acknowledgments References 9. Electrical
Properties of Porous SiC 9.1 Introduction 9.2 Resistivity and Hall Effect
9.3 Deep Level Transient Spectroscopy 9.4 Sample Considerations 9.5
Potential Energy Near a Pore 9.6 DLTS Data and Analysis References 10.
Magnetism of Transition Metal Doped GaN Nanostructures 10.1 Introduction
10. 2 Mn-Doped GaN Crystal 10. 3 Mn-Doped GaN Thin Films 10.4 Mn- and
Cr-Doped GaN One-Dimensional Structures 10.5 N-Doped Mn and Cr C Clusters
10.6 Summary Acknowledgement References 11 SiC Catalysis Technology 11.1
Introduction 11.2 Silicon Carbide Support 11.3 Heat Effects during Reaction
11.4 Reactions on SiC as Catalytic Supports 11.5 Examples of SiC Catalyst
Applications 11.6 Prospects and Conclusions References 12. Nanoporous
Silicon Carbide as a Semi-Permeable Biomembrane for Medical Use: Practical
and Theoretical Considerations 12. 1. The Rationale for Implantable
Semi-Permeable Materials 12. 2. The Biology of Soluble Signaling Proteins
in Tissue 12. 3. Measuring Cytokine Secretion In Living Tissues and Organs
12.4. Creating a Biocompatible Tissue - Device Interface: Advantages of
Silicon Carbide 12.5. The Testing of SiC Membranes for Permeability of
Proteins 12.6. Improving the Structure of SiC Membranes for Biosensor
Interfaces 12.7. Theoretical Considerations: Modeling Diffusion through a
Porous Membrane 12.8. Future Development: Marriage of Membrane and
Microchip 12.9. Conclusions Acknowledgments References