This state-of-the-art work addresses both mainstream and emerging metallic spintronic devices. Featuring contributions from well-known academic and industrial experts, the book examines the latest metallic spintronic device research, developments, and applications, from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. The text aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.
This state-of-the-art work addresses both mainstream and emerging metallic spintronic devices. Featuring contributions from well-known academic and industrial experts, the book examines the latest metallic spintronic device research, developments, and applications, from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. The text aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.
Xiaobin Wang is director at Avalanche Technology and consultant at Caraburo Consulting LLC and Ingredients LLC. He holds a Ph.D from the University of California, San Diego. Dr. Wang has published over 100 articles and holds 50 US patents, approved or pending. He previously worked at Western Digital and Seagate Technology. His work in memory and data storage includes device design, advanced technology gap closure, prediction of system performance through bottom-up (from physics to system performance) and top-down (from system performance to component requirements) approaches, company product platform and basic technology roadmap modeling, new concept initiation, and intellectual property analysis.
Inhaltsangabe
Perpendicular Spin Torque Oscillator and Microwave Assisted Magnetic Recording. Spin Transfer Torque MRAM: Device Architecture and Modeling. The Prospect of STT RAM Scaling. Spintronic Device Memristive Effects and Magnetization Switching Optimizing. Magnetic Insulator Based Spintronics: Spin Pumping, Magnetic Proximity, Spin Hall, and Spin Seebeck Effects on Yttrium Iron Garnet Thin Films. Electric Field Induced Switching for Magnetic Memory Devices.
Perpendicular Spin Torque Oscillator and Microwave Assisted Magnetic Recording. Spin Transfer Torque MRAM: Device Architecture and Modeling. The Prospect of STT RAM Scaling. Spintronic Device Memristive Effects and Magnetization Switching Optimizing. Magnetic Insulator Based Spintronics: Spin Pumping, Magnetic Proximity, Spin Hall, and Spin Seebeck Effects on Yttrium Iron Garnet Thin Films. Electric Field Induced Switching for Magnetic Memory Devices.
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