This work presents a comprehensive overview of the development of new generations of infrared detectors based on artificially synthesized quantum structures. Featuring contributions from researchers working at the "cutting edge" of this field, this volume will become an essential reference for advanced graduate students and researchers alike.
This work presents a comprehensive overview of the development of new generations of infrared detectors based on artificially synthesized quantum structures. Featuring contributions from researchers working at the "cutting edge" of this field, this volume will become an essential reference for advanced graduate students and researchers alike.
Produktdetails
Produktdetails
Optoelectronic Properties of Semiconductors and Superlattices
Manijeh Razeghi is the director of the Center for Quantum Devices and a faculty member of the Electrical Engineering and Computer Science Department at Northwestern University.
Inhaltsangabe
About the Series Preface Introduction 1 The Basic Physics of Photoconductive Quantum Well 2 Growth and Characterization of GalnP/GaAs 3 Metal Grating Coupled Bound-to Miniband Transition 4 Grating Coupled Quantum Well Infrared Detectors 5 Normal Incidence Detection of Infrared Radiation 6 N-Type III-V Multiple-Quantum-Well Detectors 7 Infrared Detectors Based on GalnSb/InAs Superlattices 8 Novel InTlSb Infrared Detectors Index
About the Series Preface Introduction 1 The Basic Physics of Photoconductive Quantum Well 2 Growth and Characterization of GalnP/GaAs 3 Metal Grating Coupled Bound-to Miniband Transition 4 Grating Coupled Quantum Well Infrared Detectors 5 Normal Incidence Detection of Infrared Radiation 6 N-Type III-V Multiple-Quantum-Well Detectors 7 Infrared Detectors Based on GalnSb/InAs Superlattices 8 Novel InTlSb Infrared Detectors Index
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