233,99 €
inkl. MwSt.
Versandkostenfrei*
Versandfertig in über 4 Wochen
payback
117 °P sammeln
  • Gebundenes Buch

This book describes the effects of ionizing radiation on modern semiconductor devices. It also discusses hardening-by-design solutions for custom chips. The text covers a range of devices, from memories and microprocessors to mixed-analog components and imagers. It addresses the experimental aspects as well as the simulation of radiation effects in electronic devices. It deals with several environments of interest, including terrestrial, space, and high-energy physics. The book provides a solid theoretical background, yet is practical enough to assist in making effective use of beam time.

Produktbeschreibung
This book describes the effects of ionizing radiation on modern semiconductor devices. It also discusses hardening-by-design solutions for custom chips. The text covers a range of devices, from memories and microprocessors to mixed-analog components and imagers. It addresses the experimental aspects as well as the simulation of radiation effects in electronic devices. It deals with several environments of interest, including terrestrial, space, and high-energy physics. The book provides a solid theoretical background, yet is practical enough to assist in making effective use of beam time.
Autorenporträt
Marta Bagatin received her Laurea degree (cum laude) in electronic engineering and her Ph.D in information science and technology, both from the University of Padova, Italy. She is currently a postdoctoral researcher in the Department of Information Engineering at the University of Padova. Her research concerns radiation and reliability effects on electronic devices, especially on nonvolatile semiconductor memories. Marta has authored/coauthored two book chapters and more than 90 journal and conference publications. She regularly serves on committees for events such as the Nuclear and Space Radiation Effects Conference and Radiation Effects on Components and Systems, and as a journal reviewer. Simone Gerardin received his Laurea degree (cum laude) in electronics engineering and his Ph.D in electronics and telecommunications engineering, both from the University of Padova, Italy-where he is currently an assistant professor. His research concerns soft and hard errors induced by ionizing radiation in advanced CMOS technologies, and their interplay with device aging and ESD. Simone has authored/coauthored more than 150 journal papers and conference presentations, three book chapters, and three radiation effects conference tutorials. He is an associate editor for IEEE Transactions on Nuclear Science, a reviewer for several scientific journals, and a Radiation Effects Steering Group member-at-large.