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  • Gebundenes Buch

A particularly valuable feature is through the discussion of various technical aspects of the terahertz range like the generation of high-power coherent radiation, optical components, instrumentation, and detection schemes of short intense radiation impulses. The book complements, for the first time in form of a monograph, previous books on infrared physics which dealt with low-power optical and opto-electronic processes. It will be useful not only to scientists but also to advanced students who are interested in terahertz research.
Intense Terahertz Excitation of Semiconductors presents
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Produktbeschreibung
A particularly valuable feature is through the discussion of various technical aspects of the terahertz range like the generation of high-power coherent radiation, optical components, instrumentation, and detection schemes of short intense radiation impulses. The book complements, for the first time in form of a monograph, previous books on infrared physics which dealt with low-power optical and opto-electronic processes. It will be useful not only to scientists but also to advanced students who are interested in terahertz research.
Intense Terahertz Excitation of Semiconductors presents the first comprehensive treatment of high-power terahertz applications to semiconductors and low-dimensional semiconductor structures. Terahertz properties of semiconductors are in the center of scientific activities because of the need of high-speed electronics. This research monograph brigdes the gap between microwave physics and photonics. It focuses on a core topic of semiconductor physics providing a full description of the state of the art of the field.
Autorenporträt
Sergey D. Ganichev Department of Physics Universität Regensburg D93040 Regensburg German ; Willi Prettl Department of Physics Universität Regensburg D93040 Regensburg Germany