III-Nitride Electronic Devices

Herausgegeben:Chu, Rongming; Shinohara, Keisuke

• Gebundenes Buch

Produktbeschreibung

III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more.

Produktdetails

• Semiconductors and Semimetals Volume 102
• Verlag: Academic Press / Elsevier Science & Technology
• Artikelnr. des Verlages: S0080-8784(19)X0004-6
• Englisch
• Abmessung: 28mm x 152mm x 229mm
• Gewicht: 970g
• ISBN-13: 9780128175446
• Artikelnr.: 55736065

Autorenporträt

Rongming Chu is an Associate Professor at the Electrical Engineering Department of the Pennsylvania State University. Rongming Chu did his Ph.D. study at UC-Santa Barbara, working on GaN microwave transistors. After finishing his Ph.D. in 2008, he spent two years at Transphorm Inc., then a start-up company commercializing GaN power switching technology. From 2010 to 2018, he was with HRL Laboratories as a Research Staff Member and later as a Senior Research Staff, working on GaN power device technology development. Rongming has more than 30 issued US patents and over 70 publications in the field of GaN materials, devices and circuits. He is a senior member of IEEE and served on the technical program committees of the IEEE Workshop on Wide Bandgap Power Device and Applications, the IEEE Lester Eastman Conference, and the Asia-Pacific Workshop on Wide Bandgap Semiconductors. He is a recipient of the IEEE Electron Device Society's George E. Smith Award.

Inhaltsangabe

1. Electronic properties of III-nitride materials and basics of III-nitride FETs Peter M. Asbeck 2. Epitaxial growth of III-nitride electronic devices Yu Cao 3. III-Nitride microwave power transistors Jeong-Sun Moon 4. III-Nitride millimeter wave transistors Keisuke Shinohara 5. III-Nitride lateral transistor power switch Sang-Woo Han and Rongming Chu 6. III-Nitride vertical devices Tohru Oka 7. Physics-based III-Nitride device modeling Ujwal Radhakrishna 8. Power electronics applications of III-nitride transistors Yifeng Wu 9. N-polar III-nitride transistors M.H. Wong and U.K. Mishra 10. III-Nitride ultra-wide-bandgap electronic devices Robert J. Kaplar, Andrew A. Allerman, Andrew M. Armstrong, Albert G. Baca, Mary H. Crawford, Jeramy R. Dickerson, Erica A. Douglas, Arthur J. Fischer, Brianna A. Klein and Shahed Reza 11. III-Nitride p-channel transistors Akira Nakajima 12. Emerging materials, processing and device concepts David J. Meyer, D. Scott Katzer, Matthew T. Hardy, Neeraj Nepal and Brian P. Downey 13. Epitaxial lift-off for III-nitride devices Chris Youtsey, Robert McCarthy and Patrick Fay