Handbook for III-V High Electron Mobility Transistor Technologies
Herausgeber: Nirmal, D.; Ajayan, J.
Handbook for III-V High Electron Mobility Transistor Technologies
Herausgeber: Nirmal, D.; Ajayan, J.
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The book covers III-V high electron mobility transistors (HEMT) and their basic physics, materials, fabrication, reliability, modeling and simulation with detailed DC, RF and breakdown performances of high electron mobility transistors, with reference to AlGaN/GaN HEMTs, MoS HEMT, InP HEMTs and DG-HEMTs.
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The book covers III-V high electron mobility transistors (HEMT) and their basic physics, materials, fabrication, reliability, modeling and simulation with detailed DC, RF and breakdown performances of high electron mobility transistors, with reference to AlGaN/GaN HEMTs, MoS HEMT, InP HEMTs and DG-HEMTs.
Produktdetails
- Produktdetails
- Verlag: CRC Press
- Seitenzahl: 444
- Erscheinungstermin: 18. Dezember 2020
- Englisch
- Abmessung: 251mm x 175mm x 25mm
- Gewicht: 739g
- ISBN-13: 9780367729240
- ISBN-10: 0367729245
- Artikelnr.: 69892110
- Verlag: CRC Press
- Seitenzahl: 444
- Erscheinungstermin: 18. Dezember 2020
- Englisch
- Abmessung: 251mm x 175mm x 25mm
- Gewicht: 739g
- ISBN-13: 9780367729240
- ISBN-10: 0367729245
- Artikelnr.: 69892110
D.Nirmal (M'08 - SM'15)is currently an Associate Professor in the Schoolof Electrical sciences, Karunya University,India. Hereceived the Ph.D. degree in Information and CommunicationEngineering from Anna University, India.His research interest includes Nano electronics,Optoelectronics, Microelectronics, VLSI Design, Device fabrication and modelling. He is the author of many Refereedinternational journals and conferences. He is a Chair of IEEE EDCoimbatore Chapter. He has been awarded as Shri.P. K. Das Memorial Best Faculty Award in the Year2013. He has received best high impact factor journal publication awardand best researcher award from Karunya University in 2012 and 2014 respectively. He has delivered manylecture andinvited to chair severalconference/workshop in National and International Level. He is currently an editor in microelectronics journal. He is a senior member of IEEE, Member of IETE, SSI, ISTE and IEI Societies. J. Ajayan received the B.Tech. Degree in electronics and communication engineering from Kerala University, Trivandrum, India, in 2009 and the M.Tech. degree in VLSI Design from Karunya University, Coimbatore, India, in 2012 and the Ph.D. degree in electronics and communication engineering from Karunya University, Coimbatore, INDIA, in 2017. He is a Senior assistant professor in the department of electronics and communication engineering at SNS College of Technology, Coimbatore, Tamilnadu, India. He has presented papers in many international conferences and also he is an author of many Refereed international journals (Elsevier, Taylor and Francis, Springer, IOP Science).
1. Motivation Behind High Electron Mobility Transistors 2. Introduction to
High Electron Mobility Transistors 3. HEMT Material Technology and
Epitaxial Deposition Techniques 4. Source/Drain, Gate and Channel
Engineering in HEMTs 5. AlGaN/GaN HEMTs for High Power Applications 6.
AlGaN/GaN HEMT Fabrication and Challenges 7. Analytical Modeling of High
Electron Mobility Transistors 8. Polarization Effects in AlGaN/GaN HEMTs 9.
Current Collapse in AlGaN/GaN HEMTs 10. AlGaN/GaN HEMT Modeling and
Simulation 11. Breakdown Voltage Improvement Techniques in AlGaN/GaN HEMTs
12. InP/InAlAs/InGaAs HEMTs for High Speed and Low Power Applications 13. A
Study of the Elemental and Surface Characterization of AlGaN/GaN HEMT by
Magnetron Sputtering System 14. Metamorphic HEMTs for Sub Millimeter Wave
Applications 15. Metal Oxide Semiconductor High Electron Mobility
Transistors 16. Double Gate High Electron Mobility Transistors
High Electron Mobility Transistors 3. HEMT Material Technology and
Epitaxial Deposition Techniques 4. Source/Drain, Gate and Channel
Engineering in HEMTs 5. AlGaN/GaN HEMTs for High Power Applications 6.
AlGaN/GaN HEMT Fabrication and Challenges 7. Analytical Modeling of High
Electron Mobility Transistors 8. Polarization Effects in AlGaN/GaN HEMTs 9.
Current Collapse in AlGaN/GaN HEMTs 10. AlGaN/GaN HEMT Modeling and
Simulation 11. Breakdown Voltage Improvement Techniques in AlGaN/GaN HEMTs
12. InP/InAlAs/InGaAs HEMTs for High Speed and Low Power Applications 13. A
Study of the Elemental and Surface Characterization of AlGaN/GaN HEMT by
Magnetron Sputtering System 14. Metamorphic HEMTs for Sub Millimeter Wave
Applications 15. Metal Oxide Semiconductor High Electron Mobility
Transistors 16. Double Gate High Electron Mobility Transistors
1. Motivation Behind High Electron Mobility Transistors 2. Introduction to
High Electron Mobility Transistors 3. HEMT Material Technology and
Epitaxial Deposition Techniques 4. Source/Drain, Gate and Channel
Engineering in HEMTs 5. AlGaN/GaN HEMTs for High Power Applications 6.
AlGaN/GaN HEMT Fabrication and Challenges 7. Analytical Modeling of High
Electron Mobility Transistors 8. Polarization Effects in AlGaN/GaN HEMTs 9.
Current Collapse in AlGaN/GaN HEMTs 10. AlGaN/GaN HEMT Modeling and
Simulation 11. Breakdown Voltage Improvement Techniques in AlGaN/GaN HEMTs
12. InP/InAlAs/InGaAs HEMTs for High Speed and Low Power Applications 13. A
Study of the Elemental and Surface Characterization of AlGaN/GaN HEMT by
Magnetron Sputtering System 14. Metamorphic HEMTs for Sub Millimeter Wave
Applications 15. Metal Oxide Semiconductor High Electron Mobility
Transistors 16. Double Gate High Electron Mobility Transistors
High Electron Mobility Transistors 3. HEMT Material Technology and
Epitaxial Deposition Techniques 4. Source/Drain, Gate and Channel
Engineering in HEMTs 5. AlGaN/GaN HEMTs for High Power Applications 6.
AlGaN/GaN HEMT Fabrication and Challenges 7. Analytical Modeling of High
Electron Mobility Transistors 8. Polarization Effects in AlGaN/GaN HEMTs 9.
Current Collapse in AlGaN/GaN HEMTs 10. AlGaN/GaN HEMT Modeling and
Simulation 11. Breakdown Voltage Improvement Techniques in AlGaN/GaN HEMTs
12. InP/InAlAs/InGaAs HEMTs for High Speed and Low Power Applications 13. A
Study of the Elemental and Surface Characterization of AlGaN/GaN HEMT by
Magnetron Sputtering System 14. Metamorphic HEMTs for Sub Millimeter Wave
Applications 15. Metal Oxide Semiconductor High Electron Mobility
Transistors 16. Double Gate High Electron Mobility Transistors