Tsunenobu Kimoto, James A. Cooper

Fundamentals of Silicon Carbide Technology

Growth, Characterization, Devices and Applications

• Gebundenes Buch

Produktbeschreibung

A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: * A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. * Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. * A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. * Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. * Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Produktdetails

• Verlag: Wiley & Sons
• 1. Auflage
• Seitenzahl: 400
• Erscheinungstermin: 1. November 2014
• Englisch
• Abmessung: 260mm x 183mm x 34mm
• Gewicht: 970g
• ISBN-13: 9781118313527
• ISBN-10: 1118313526
• Artikelnr.: 37271426

Autorenporträt

Tsunenobu Kimoto, Department of Electronic Science and Engineering, Kyoto University, Japan. Professor Kimoto has been involved in SiC research for more than 20 years and his research activity in this field covers growth, optical and electrical characterization, device processing, device design and fabrication. He has published more than 300 papers in international journals and has presented more than 50 invited talks at international conferences. He was a guest editor of the 2008 SiC special issues of IEEE Transactions on Electron Devices. James A Cooper, School of Electrical and Computer Engineering, Purdue University, Indiana, USA Professor Cooper was a member of technical staff at Bell Laboratories for ten years where he was principal designer of AT&T's first microprocessor and investigated nonlinear transport in silicon inversion layers. His research at Purdue has centered on semiconductor device physics and characterization, focusing primarily on III-V materials and silicon carbide. He has co-authored over 250 technical papers and conference presentations.

Inhaltsangabe

About the Authors xi Preface xiii 1 Introduction 1 1.1 Progress in
Electronics 1 1.2 Features and Brief History of Silicon Carbide 3 1.2.1
Early History 3 1.2.2 Innovations in SiC Crystal Growth 4 1.2.3 Promise and
Demonstration of SiC Power Devices 5 1.3 Outline of This Book 6 References
6 2 Physical Properties of Silicon Carbide 11 2.1 Crystal Structure 11 2.2
Electrical and Optical Properties 16 2.2.1 Band Structure 16 2.2.2 Optical
Absorption Coefficient and Refractive Index 18 2.2.3 Impurity Doping and
Carrier Density 20 2.2.4 Mobility 23 2.2.5 Drift Velocity 27 2.2.6
Breakdown Electric Field Strength 28 2.3 Thermal and Mechanical Properties
30 2.3.1 Thermal Conductivity 30 2.3.2 Phonons 31 2.3.3 Hardness and
Mechanical Properties 32 2.4 Summary 32 References 33 3 Bulk Growth of
Silicon Carbide 39 3.1 Sublimation Growth 39 3.1.1 Phase Diagram of Si-C 39
3.1.2 Basic Phenomena Occurring during the Sublimation (Physical Vapor
Transport) Method 39 3.1.3 Modeling and Simulation 44 3.2 Polytype Control
in Sublimation Growth 46 3.3 Defect Evolution and Reduction in Sublimation
Growth 50 3.3.1 Stacking Faults 50 3.3.2 Micropipe Defects 51 3.3.3
Threading Screw Dislocation 53 3.3.4 Threading Edge Dislocation and Basal
Plane Dislocation 54 3.3.5 Defect Reduction 57 3.4 Doping Control in
Sublimation Growth 59 3.4.1 Impurity Incorporation 59 3.4.2 n-Type Doping
61 3.4.3 p-Type Doping 61 3.4.4 Semi-Insulating 62 3.5 High-Temperature
Chemical Vapor Deposition 64 3.6 Solution Growth 66 3.7 3C-SiC Wafers Grown
by Chemical Vapor Deposition 67 3.8 Wafering and Polishing 67 3.9 Summary
69 References 69 4 Epitaxial Growth of Silicon Carbide 75 4.1 Fundamentals
of SiC Homoepitaxy 75 4.1.1 Polytype Replication in SiC Epitaxy 75 4.1.2
Theoretical Model of SiC Homoepitaxy 78 4.1.3 Growth Rate and Modeling 83
4.1.4 Surface Morphology and Step Dynamics 87 4.1.5 Reactor Design for SiC
Epitaxy 89 4.2 Doping Control in SiC CVD 90 4.2.1 Background Doping 90
4.2.2 n-Type Doping 91 4.2.3 p-Type Doping 92 4.3 Defects in SiC Epitaxial
Layers 93 4.3.1 Extended Defects 93 4.3.2 Deep Levels 102 4.4 Fast
Homoepitaxy of SiC 105 4.5 SiC Homoepitaxy on Non-standard Planes 107 4.5.1
SiC Homoepitaxy on Nearly On-Axis {0001} 107 4.5.2 SiC Homoepitaxy on
Non-basal Planes 108 4.5.3 Embedded Homoepitaxy of SiC 110 4.6 SiC
Homoepitaxy by Other Techniques 110 4.7 Heteroepitaxy of 3C-SiC 111 4.7.1
Heteroepitaxial Growth of 3C-SiC on Si 111 4.7.2 Heteroepitaxial Growth of
3C-SiC on Hexagonal SiC 114 4.8 Summary 114 References 115 5
Characterization Techniques and Defects in Silicon Carbide 125 5.1
Characterization Techniques 125 5.1.1 Photoluminescence 126 5.1.2 Raman
Scattering 134 5.1.3 Hall Effect and Capacitance-Voltage Measurements 136
5.1.4 Carrier Lifetime Measurements 137 5.1.5 Detection of Extended Defects
142 5.1.6 Detection of Point Defects 150 5.2 Extended Defects in SiC 155
5.2.1 Major Extended Defects in SiC 155 5.2.2 Bipolar Degradation 156 5.2.3
Effects of Extended Defects on SiC Device Performance 161 5.3 Point Defects
in SiC 165 5.3.1 Major Deep Levels in SiC 165 5.3.2 Carrier Lifetime Killer
174 5.4 Summary 179 References 180 6 Device Processing of Silicon Carbide
189 6.1 Ion Implantation 189 6.1.1 Selective Doping Techniques 190 6.1.2
Formation of an n-Type Region by Ion Implantation 191 6.1.3 Formation of a
p-Type Region by Ion Implantation 197 6.1.4 Formation of a Semi-Insulating
Region by Ion Implantation 200 6.1.5 High-Temperature Annealing and Surface
Roughening 201 6.1.6 Defect Formation by Ion Implantation and Subsequent
Annealing 203 6.2 Etching 208 6.2.1 Reactive Ion Etching 208 6.2.2
High-Temperature Gas Etching 211 6.2.3 Wet Etching 212 6.3 Oxidation and
Oxide/SiC Interface Characteristics 212 6.3.1 Oxidation Rate 213 6.3.2
Dielectric Properties of Oxides 215 6.3.3 Structural and Physical
Characterization of Thermal Oxides 217 6.3.4 Electrical Characterization
Techniques and Their Limitations 219 6.3.5 Properties of the Oxide/SiC
Interface and Their Improvement 234 6.3.6 Interface Properties of Oxide/SiC
on Various Faces 241 6.3.7 Mobility-Limiting Factors 244 6.4 Metallization
248 6.4.1 Schottky Contacts on n-Type and p-Type SiC 249 6.4.2 Ohmic
Contacts to n-Type and p-Type SiC 255 6.5 Summary 262 References 263 7
Unipolar and Bipolar Power Diodes 277 7.1 Introduction to SiC Power
Switching Devices 277 7.1.1 Blocking Voltage 277 7.1.2 Unipolar Power
Device Figure of Merit 280 7.1.3 Bipolar Power Device Figure of Merit 281
7.2 Schottky Barrier Diodes (SBDs) 282 7.3 pn and pin Junction Diodes 286
7.3.1 High-Level Injection and the Ambipolar Diffusion Equation 288 7.3.2
Carrier Densities in the "i" Region 290 7.3.3 Potential Drop across the "i"
Region 292 7.3.4 Current-Voltage Relationship 293 7.4 Junction-Barrier
Schottky (JBS) and Merged pin-Schottky (MPS) Diodes 296 References 300 8
Unipolar Power Switching Devices 301 8.1 Junction Field-Effect Transistors
(JFETs) 301 8.1.1 Pinch-Off Voltage 302 8.1.2 Current-Voltage Relationship
303 8.1.3 Saturation Drain Voltage 304 8.1.4 Specific On-Resistance 305
8.1.5 Enhancement-Mode and Depletion-Mode Operation 308 8.1.6 Power JFET
Implementations 311 8.2 Metal-Oxide-Semiconductor Field-Effect Transistors
(MOSFETs) 312 8.2.1 Review of MOS Electrostatics 312 8.2.2 MOS
Electrostatics with Split Quasi-Fermi Levels 315 8.2.3 MOSFET
Current-Voltage Relationship 316 8.2.4 Saturation Drain Voltage 319 8.2.5
Specific On-Resistance 319 8.2.6 Power MOSFET Implementations: DMOSFETs and
UMOSFETs 320 8.2.7 Advanced DMOSFET Designs 321 8.2.8 Advanced UMOS Designs
324 8.2.9 Threshold Voltage Control 326 8.2.10 Inversion Layer Electron
Mobility 329 8.2.11 Oxide Reliability 339 8.2.12 MOSFET Transient Response
342 References 350 9 Bipolar Power Switching Devices 353 9.1 Bipolar
Junction Transistors (BJTs) 353 9.1.1 Internal Currents 353 9.1.2 Gain
Parameters 355 9.1.3 Terminal Currents 357 9.1.4 Current-Voltage
Relationship 359 9.1.5 High-Current Effects in the Collector: Saturation
and Quasi-Saturation 360 9.1.6 High-Current Effects in the Base: the
Rittner Effect 366 9.1.7 High-Current Effects in the Collector: Second
Breakdown and the Kirk Effect 368 9.1.8 Common Emitter Current Gain:
Temperature Dependence 370 9.1.9 Common Emitter Current Gain: the Effect of
Recombination 371 9.1.10 Blocking Voltage 373 9.2 Insulated-Gate Bipolar
Transistors (IGBTs) 373 9.2.1 Current-Voltage Relationship 374 9.2.2
Blocking Voltage 384 9.2.3 Switching Characteristics 385 9.2.4 Temperature
Dependence of Parameters 391 9.3 Thyristors 392 9.3.1 Forward Conducting
Regime 393 9.3.2 Forward Blocking Regime and Triggering 398 9.3.3 The
Turn-On Process 404 9.3.4 dV/dt Triggering 406 9.3.5 The dI/dt Limitation
407 9.3.6 The Turn-Off Process 407 9.3.7 Reverse-Blocking Mode 415
References 415 10 Optimization and Comparison of Power Devices 417 10.1
Blocking Voltage and Edge Terminations for SiC Power Devices 417 10.1.1
Impact Ionization and Avalanche Breakdown 418 10.1.2 Two-Dimensional Field
Crowding and Junction Curvature 423 10.1.3 Trench Edge Terminations 424
10.1.4 Beveled Edge Terminations 425 10.1.5 Junction Termination Extensions
(JTEs) 427 10.1.6 Floating Field-Ring (FFR) Terminations 429 10.1.7
Multiple-Floating-Zone (MFZ) JTE and Space-Modulated (SM) JTE 432 10.2
Optimum Design of Unipolar Drift Regions 435 10.2.1 Vertical Drift Regions
435 10.2.2 Lateral Drift Regions 438 10.3 Comparison of Device Performance
440 References 443 11 Applications of Silicon Carbide Devices in Power
Systems 445 11.1 Introduction to Power Electronic Systems 445 11.2 Basic
Power Converter Circuits 446 11.2.1 Line-Frequency Phase-Controlled
Rectifiers and Inverters 446 11.2.2 Switch-Mode DC-DC Converters 450 11.2.3
Switch-Mode Inverters 453 11.3 Power Electronics for Motor Drives 458
11.3.1 Introduction to Electric Motors and Motor Drives 458 11.3.2 DC Motor
Drives 459 11.3.3 Induction Motor Drives 460 11.3.4 Synchronous Motor
Drives 465 11.3.5 Motor Drives for Hybrid and Electric Vehicles 468 11.4
Power Electronics for Renewable Energy 471 11.4.1 Inverters for
Photovoltaic Power Sources 471 11.4.2 Converters for Wind Turbine Power
Sources 472 11.5 Power Electronics for Switch-Mode Power Supplies 476 11.6
Performance Comparison of SiC and Silicon Power Devices 481 References 486
12 Specialized Silicon Carbide Devices and Applications 487 12.1 Microwave
Devices 487 12.1.1 Metal-Semiconductor Field-Effect Transistors (MESFETs)
487 12.1.2 Static Induction Transistors (SITs) 489 12.1.3 Impact Ionization
Avalanche Transit-Time (IMPATT) Diodes 496 12.2 High-Temperature Integrated
Circuits 497 12.3 Sensors 499 12.3.1 Micro-Electro-Mechanical Sensors
(MEMS) 499 12.3.2 Gas Sensors 500 12.3.3 Optical Detectors 504 References
509 Appendix A Incomplete Dopant Ionization in 4H-SiC 511 References 515
Appendix B Properties of the Hyperbolic Functions 517 Appendix C Major
Physical Properties of Common SiC Polytypes 521 C.1 Properties 521 C.2
Temperature and/or Doping Dependence of Major Physical Properties 522
References 523 Index 525