Functionalized InN ISFET for DNA Hybridization Detection - Cheng-Yi, Lin
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Ultrathin (10 nm) InN ion sensitive field effect transistors (ISFETs) with gate region modified with 3-mercaptopropyltrimethoxysilane (MPTMS) by molecular vapor deposition (MVD) are used to detect hybridization of deoxyribonucleic acid (DNA). The ultrathin InN ISFETs have a high sensitivity and short response time for anion detection, showing a great potential for chemical and biological sensing applications. A drain-source current decrease(~6 uA) was observed due to the attachment of negatively charged DNA. For a 12-mer oligonucleotide probe, the detection of 1 nM target DNA was accomplished,…mehr

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Produktbeschreibung
Ultrathin (10 nm) InN ion sensitive field effect transistors (ISFETs) with gate region modified with 3-mercaptopropyltrimethoxysilane (MPTMS) by molecular vapor deposition (MVD) are used to detect hybridization of deoxyribonucleic acid (DNA). The ultrathin InN ISFETs have a high sensitivity and short response time for anion detection, showing a great potential for chemical and biological sensing applications. A drain-source current decrease(~6 uA) was observed due to the attachment of negatively charged DNA. For a 12-mer oligonucleotide probe, the detection of 1 nM target DNA was accomplished, while the noncomplementary DNA with one base mismatch did not show any obvious current variation.
Autorenporträt
I joined IBM as a Device Characterization Engineer. I graduated from Electrical Engineering at UCLA. While I was a graduate student at National Tsing Hua University, I was inspired to conduct a study of 10nm InN ISFET for biosensing. In addition to academic experience, I was a summer intern at TSMC.