Electron Injection Effects in Wide-Band-Gap Semiconductors - Flitsiyan, Elena;Chernyak, Leonid
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This review summarizes the information on the Cathodoluminescence studies of minority carrier transport in Wide-Band-Gap semiconductors, focusing on its temperature dependence and the dynamics of non-equilibrium carrier recombination. The influence of deep traps on minority carrier diffusion length and lifetime is discussed. The experimental results, showing the impact of minority carrier transport on the performance of bipolar devices, as well as a discussion of techniques, used for measurements of the minority carrier diffusion length and lifetime, are provided.

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Produktbeschreibung
This review summarizes the information on the Cathodoluminescence studies of minority carrier transport in Wide-Band-Gap semiconductors, focusing on its temperature dependence and the dynamics of non-equilibrium carrier recombination. The influence of deep traps on minority carrier diffusion length and lifetime is discussed. The experimental results, showing the impact of minority carrier transport on the performance of bipolar devices, as well as a discussion of techniques, used for measurements of the minority carrier diffusion length and lifetime, are provided.
Autorenporträt
Dr.Elena Flitsiyan received her PhD in Physics and Math from Moscow State University in 1975 and Habilitation in Nuclear Physics from JINR (Dubna) in 1995. She was a Chair of NAA Department at INP, Uzbekistan before joining University of Central Florida in 1999. Since 2009 she has been the Undergraduate Program Director at UCF¿s Physics Department.