Development of Interference Lithography Capability Using a Helium Cadmium Ultraviolet Multimode Laser for the Fabrication of Sub-Micron-Structured Opt
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The goal of this work is to develop unique holograms on a semiconductor-metal thin films to characterize as potential metamaterials. This is achievable by developing a fabrication recipe to include exposure methods, exposure dosages, and material development. This study developed an interference lithography capability at AFIT for the first time with period resolution below 230nm. It also identified initial acceptable photoresist materials and exposure dosages, and a path to follow to optimize this process.
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