Characterization of Wide Bandgap Power Semiconductor Devices - Wang, Fei; Zhang, Zheyu; Jones, Edward A
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Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization. It provides essential tools to assist researchers, advanced students and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications, and includes examples of applying the described methodology.

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Produktbeschreibung
Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization. It provides essential tools to assist researchers, advanced students and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications, and includes examples of applying the described methodology.
Autorenporträt
Fei (Fred) Wang is Professor of Electrical Engineering and Condra Chair of Excellence in Power Electronics, and Technical Director of NSF/DOE Engineering Research Center CURENT at The University of Tennessee, Knoxville, USA. He also holds a joint appointment with Oak Ridge National Lab. Prof. Wang has published over 400 journal and conference papers, authored 3 book chapters, and holds 15 US patents. He is a fellow of IEEE and NAI.