Amorphous and Crystalline Silicon Carbide and Related Materials
Proceedings of the First International Conference, Washington DC, December 10 and 11, 1987
Herausgegeben von Harris, Gary L.; Yang, Cary Y.-W.
Amorphous and Crystalline Silicon Carbide and Related Materials
Proceedings of the First International Conference, Washington DC, December 10 and 11, 1987
Herausgegeben von Harris, Gary L.; Yang, Cary Y.-W.
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Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of…mehr
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- ThorpeProperties and Applications of Amorphous Materials154,99 €
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- Produktdetails
- Springer Proceedings in Physics .34
- Verlag: Springer / Springer Berlin Heidelberg / Springer, Berlin
- Artikelnr. des Verlages: 978-3-642-93408-7
- 1989
- Seitenzahl: 216
- Erscheinungstermin: 19. Januar 2012
- Englisch
- Abmessung: 244mm x 170mm x 12mm
- Gewicht: 382g
- ISBN-13: 9783642934087
- ISBN-10: 3642934080
- Artikelnr.: 36121193
- Springer Proceedings in Physics .34
- Verlag: Springer / Springer Berlin Heidelberg / Springer, Berlin
- Artikelnr. des Verlages: 978-3-642-93408-7
- 1989
- Seitenzahl: 216
- Erscheinungstermin: 19. Januar 2012
- Englisch
- Abmessung: 244mm x 170mm x 12mm
- Gewicht: 382g
- ISBN-13: 9783642934087
- ISBN-10: 3642934080
- Artikelnr.: 36121193