This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures, to its applications.
This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures, to its applications.
Qing Luo received his Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing, China, in 2017. He is currently Professor at the Key Laboratory of Microelectronics Devices and Integrated Technology in IMECAS. His research interests are emerging memory devices including resistive RAM devices and ferroelectric memory devices.
Inhaltsangabe
1. Introduction Qing Luo 2.Associative Problems in Crossbar array and 3D architectures Qing Luo 3. Selector Devices and Self-selective cells Yaxin Ding, Qing Luo 4. Integration of 3D RRAM Qing Luo 5. Reliability issues of the 3D Vertical RRAM Tiancheng Gong, Dengyun Lei 6. Applications of 3D RRAM Beyond Storage Xumeng Zhang, Xiaoxin Xu, Jianguo Yang 7. Conclusion Qing Luo
1. Introduction Qing Luo 2.Associative Problems in Crossbar array and 3D architectures Qing Luo 3. Selector Devices and Self-selective cells Yaxin Ding, Qing Luo 4. Integration of 3D RRAM Qing Luo 5. Reliability issues of the 3D Vertical RRAM Tiancheng Gong, Dengyun Lei 6. Applications of 3D RRAM Beyond Storage Xumeng Zhang, Xiaoxin Xu, Jianguo Yang 7. Conclusion Qing Luo
Es gelten unsere Allgemeinen Geschäftsbedingungen: www.buecher.de/agb
Impressum
www.buecher.de ist ein Shop der buecher.de GmbH & Co. KG Bürgermeister-Wegele-Str. 12, 86167 Augsburg Amtsgericht Augsburg HRA 13309
