Simulation of Semiconductor Processes and Devices 2001

SISPAD 01
Herausgegeben von Tsoukalas, Dimitris; Tsamis, Christos

• Broschiertes Buch

Produktbeschreibung

This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5-7, 2001, in Athens.The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.

Produktdetails

• Verlag: Springer / Springer Vienna / Springer, Wien
• Artikelnr. des Verlages: 80096683, 978-3-7091-7278-0
• Softcover reprint of the original 1st ed. 2001
• Seitenzahl: 476
• Erscheinungstermin: 14. Oktober 2012
• Englisch
• Abmessung: 235mm x 155mm x 26mm
• Gewicht: 715g
• ISBN-13: 9783709172780
• ISBN-10: 3709172780
• Artikelnr.: 37479018

Inhaltsangabe

Macroscopic Quantum Carrier Transport Modeling.- Atomistic Front-End Process Modelling: A Powerful Tool for Deep-Submicron Device Fabrication.- Monte Carlo Impurity Diffusion Simulation Considering Charged Species.- A Novel Model for Boron Diffusion in SiGe Strained Layers Based on a Kinetics Driven Ge-B Pairing Mechanism.- The Role of Incomplete Interstitial-Vacancy Recombination on Silicon Amorphization.- Atomistic Simulations of Extrinsic-Defects Evolution and Transient Enhanced Diffusion in Silicon.- Initial Conditions for Transient Enhanced Diffusion: Beyond the Plus-Factor Approach.- Local Iterative Monte Carlo Investigation of the Influence of Electron-Electron Scattering on Short Channel Si-MOSFETs.- Simplified Inelastic Acoustic-Phonon Hole Scattering Model for Silicon.- An Impact Ionization Model Including Non-Maxwellian and Non-Parabolicity Effects.- Density of States and Group Velocity Calculations for SiO2.- Investigation of Spurious Velocity Overshoot Using Monte Carlo Data.- Elasto-Plastic Modeling of Microelectronics Materials for Accurate Prediction of the Mechanical Stresses in Advanced Silicon Technologies.- A Unified Model of Dopant Diffusion in SiGe.- A Simple Modeling and Simulation of Complete Suppression of Boron Out-Diffusion in Si1-xGex, by Carbon Insertion.- On the Effect of Local Electronic Stopping on Ion Implantation Profiles in Non-Crystalline Targets.- Dynamics of p+ Polysilicon Gate Depletion due to the Formation of Boron Compounds in TiSi2.- Analysis of Statistical Fluctuations due to Line Edge Roughness in Sub-0.1 µm MOSFETs.- Quantum Corrections in 3-D Drift Diffusion Simulations of Decanano MOSFETs Using an Effective Potential.- Finite Element Simulation of 2D Quantum Effects in Ultra Short Channel MOSFETs with High-K DielectricGates.- Decananometer FDSOI Device Optimization Including Random Variation.- Fully 2D Quantum-Mechanical Simulation of Nanoscale MOSFETs.- Ab-initio Electrodynamic Modeling of On-Chip Back-End Structures.- Analysis of Hot-Carrier-Induced Oxide Degradation in MOSFETs by Means of Full-Band Monte Carlo Simulation.- Acceleration of Lattice Monte Carlo Simulations and Application to Diffusion/Clustering of As at High Concentrations.- Interstitial Cluster Evolution and Transient Phenomena in Si-Crystal.- Monitoring Arsenic In-Situ Doping with Advanced Models for Poly-Silicon CVD.- Equipment and Process Simulation of Compound Semiconductor MOCVD in the Production Scale Multiwafer Planetary Reactor.- Numerical Simulation of Non-Equilibrium, Ultra-Rapid Heating of Si-Thin films by Nanosecond-Pulse Excimer Laser.- 2D Hierarchical Radio-Frequency Noise Modeling Based on a Langevin-Type Drift-Diffusion Model and Full-Band Monte-Carlo Generated Local Noise Sources.- Variance and Covariance Estimation in Stationary Monte Carlo Device Simulation.- Analysis of Gate Tunneling Current in MOS Structures using Quantum Mechanical Simulation.- 2-D Self-Consistent Solution of Schrödinger Equation, Boltzmann Transport Equation, Poisson and Current-continuity Equation for MOSFET.- Boundary Condition Models for Terminal Current Fluctuations.- Electron velocity in sub-50 nm channel MOSFETs.- 3D Statistical Simulation of Intrinsic Fluctuations in Decanano MOSFETs Introduced by Discrete Dopants, Oxide Thickness Fluctuations and LER.- Modeling of Reactive Ion Etching for Si/SiO2 Systems.- Simulation and Prediction of Aspect Ratio Dependent Phenomena during SiO2 and Si Feature Etching in Fluorocarbon Plasmas.- System Level Modeling of an Electrostatic Torsional Actuator.- Impact of SubstrateResistance on Drain Current Noise in MOSFETs.- An Efficient Frequency-Domain Analysis Technique of MOSFET Operation.- Modeling of Bias Dependent Fluctuations of Flicker Noise of MOSFETs.- Compact MOS Modeling for RF CMOS Circuit Simulation.- Statistical Analysis of VLSI Using TCAD.- Numerical Modeling of Impact-Ionization Effects on Gate-Lag Phenomena in GaAs MESFETs.- Monte Carlo Simulation of Multi-Band Carrier Transport in Semiconductor Materials with Complex Unit Cells.- Modeling Semiconductor Carbon Nanotube Rectifying Heterojunctions.- Simulation of Vertical CEO-FETs by a Coupled Solution of the Schrödinger Equation with a Hydrodynamic Transport Model.- A Computational Efficient Method for HBT Intermodulation Distortions and Two-Tone Characteristics Simulation.- Modeling the Impact of Body-to-Body Leakage in Partially -Depleted SOI CMOS Technology.- Compact Device Model for Partially Depleted SOI-MOSFETs.- Two-Dimensional Model for the Subthreshold Slope in Deep-Submicron Fully Depleted SOI MOSFETs.- 3D Thermal Analysis for SOI and its impact on Circuit Performance.- Modelling of High-Voltage SOI-LDMOS Transistors Including Self-Heating.- An Efficient Tool for Extraction of Interconnect Models in Submicron Layouts.- A Comparative Study of Two Numerical Techniques for Inductance Calculation in Interconnect Structures.- Comparison of Finite Element Stress Simulation with X-Ray Measurement for the Aluminum Conductors with different Passivation Topography.- A New Compact Spice-like Model of E2PROM Memory Cells Suitable for DC and Transient Simulations.- Simulation of Flash Memory Programming Characteristics.- A Figure of Merit for Flash Memory Multi-Layer Tunnel Dielectrics.- Enhanced Diffusion of Phosphorus due to BPSG layer in SEG-MOSFETs.- Neutron-SER Modelingand Simulation for 0.18µm CMOS Technology.- TCAD Driven Process Design of 0.151.1m Fully Depleted SOI Transistor for Low-Power Applications.- A Simulation Evaluation of 100nm CMOS Device Performance.- A Practical Approach to Modeling Strained Silicon NMOS Devices.- Accounting for Quantum Effects and Polysilicon Depletion in an Analytical Design-Oriented MOSFET Model.- Investigations of Salicided and Salicide-Blocked MOSFETs for ESD Including ESD Simulation.- Bipolar Transistor's Intrinsic and Extrinsic Capacitance Determination.- Varying Characteristics of Bipolar Transistors with Emitter Contact Window Width.- Ensemble Monte Carlo Particle Modeling of InGaAs/InP Uni-TravelingCarrier Photodiodes.- An Effective Methodology for Predicting the Distribution of MOSFET Device Characteristics Using Statistical TCAD Simulations.- Quantum Mechanical Balance Equations for Modeling Transport in Closed Electric Circuits.- A Nonlinear Iterative Method for InAs/GaAs Semiconductor Quantum Dots Simulation.- The modeling of a SOI microelectromechanical sensor.- A Computationally Efficient Model for Three-dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures.- A Full-Wave Analysis for Multi-Level Interconnects Using FDTD-PML method.- Differences Between Quantum-Mechanical Capacitance-Voltage Simulators.- Investigation of a Novel Rapid Thermal Processing Concept Using an Electro-Optically Controlled Radiation Cavity.- A Shared Architecture for a Dynamic Technology Simulation Repository.- Level Set Modeling of Profile Evolution during Deposition Process.- Parameter and Coupling Ratio Extraction for SPICE-Compatible MACRO Modeling of Source Side Injection (SSI) Flash Cell.- Theoretical Calculation of a Charged Particle Detector's Response, Fabricated by SemiInsulating (SI) GaAs.- Stress Modeling of Multi Level Interconnect Schemes for Future Deep Submicron Device Generations.- Robust Method for Fast and Accurate Simulation of Random Dopant Fluctuation-Induced Vth Variation in MOSFETs with Arbitrary Complex Doping Distribution.- An Agent-Based Common Software Platform Applied to Multi-scale Device and Process simulations.- Simulation of Dark Count in Geiger Mode Avalanche Photodiodes.- Device Simulation and Measurement of Hybrid SBTT.- Two-Dimensional Diffusion Characterization of Boron in Silicon Using Reverse Modeling.- Simulation of Advanced n-MOSFET Emphasizing Quantum Mechanical Effects on 2-D Characteristics.- Vth Model of Pocket-Implant MOSFETs for Circuit Simulation.- Electrothermal Device Simulation of an ESD Protection Structure Based on Bipolar DC Characteristics.- Characterization of Low-Frequency Noise of MOSFETs Using the 2-D Device Simulator.- Electron Beam Lithography Simulation for Subquartermicron and High-Density Patterns.- Green's Function Approach for Three-Dimensional Diffusion Simulation of Industrial High-Voltage Applications.- Analysis of Ultra-short MOSFETs with High-k Gate Dielectrics.- TCAD Analysis of Gain Cell Retention Time for SRAM Applications.- Optimization for TCAD Purposes Using Bernstein Polynomials.- Advanced Hybrid Cellular Based Approach for Three-Dimensional Etching and Deposition Simulation.- A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization.- A Review of Modeling Issues for RF Heterostructure Device Simulation.- Modeling and Simulation of Charge Generation Events Caused by Ion Irradiation in High-Voltage Power Devices.- Determination of the Radiation Efficiency, Contrast and Sensitivity in Electron and Ion Lithography.- Author Index.