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  • Format: PDF


SiGe HBTs is a hot topic within the microelectronics communitybecause of its applications potential within integrated circuitsoperating at radio frequencies. Applications range from high speedoptical networking to wireless communication devices. The addition of germanium to silicon technologies to formsilicon germanium (SiGe) devices has created a revolution in thesemiconductor industry. These transistors form the enablingdevices in a wide range of products for wireless and wiredcommunications. This book features: * SiGe products include chip sets for wireless cellular handsetsas well as WLAN…mehr

Produktbeschreibung
SiGe HBTs is a hot topic within the microelectronics communitybecause of its applications potential within integrated circuitsoperating at radio frequencies. Applications range from high speedoptical networking to wireless communication devices. The addition of germanium to silicon technologies to formsilicon germanium (SiGe) devices has created a revolution in thesemiconductor industry. These transistors form the enablingdevices in a wide range of products for wireless and wiredcommunications. This book features: * SiGe products include chip sets for wireless cellular handsetsas well as WLAN and high-speed wired network applications * Describes the physics and technology of SiGe HBTs, withcoverage of Si and Ge bipolar transistors * Written with the practising engineer in mind, this bookexplains the operating principles and applications of bipolartransistor technology. Essential reading for practising microelectronics engineers andresearchers. Also, optical communications engineers and communicationtechnology engineers. An ideal reference tool for masters levelstudents in microelectronics and electronics engineering.

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  • Produktdetails
  • Verlag: John Wiley & Sons
  • Seitenzahl: 286
  • Erscheinungstermin: 18. Dezember 2003
  • Englisch
  • ISBN-13: 9780470090732
  • Artikelnr.: 37290411
Autorenporträt
Professor Ashburn has worked as an industrial engineer, a consultant and a university professor and has accumulated a wealth of practical knowledge for incorporation in this book.
Inhaltsangabe
Preface.Physical Constants Properties of Silicon and Silicon-Germanium.List of Symbols.1. Introduction.2. Basic Bipolar Transistor Theory.3. Heavy Doping Effects.4. Second-Order Effects.5. High-Frequency Performance.6. Polysilicon Emitters.7. Properties and Growth of Silicon-Germanium.8. Silicon-Germanium Heterojunction Bipolar Transistors.9. Silicon Bipolar Technology.10. Silicon-Germanium Heterojunction Bipolar Technology.11. Compact Models of Bipolar Transistors.12. Optimization of Silicon and Silicon-Germanium Bipolar Technologies.References.Index.