Nanoscale Phenomena in Ferroelectric Thin Films - Seungbum Hong (ed.)
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This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well known le'adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and…mehr

Produktbeschreibung
This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well known le'adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin film capacitors," written by Dr. I. K. Yoo. The author provides a comprehensive review on basic concepts and terminologies of ferroelectric properties and their testing methods. This chapter also covers reliability issues in FeRAMs that are crucial for commercialization of high density memory products. In Chapter 2, "Size effects in ferroelectric film capacitors: role ofthe film thickness and capacitor size," Dr. I. Stolichnov discusses the size effects both in in-plane and out-of-plane dimensions of the ferroelectric thin film. The author successfully relates the electric performance and domain dynamics with proposed models of charge injection and stress induced phase transition. The author's findings present both a challenging problem and the clue to its solution of reliably predicting the switching properties for ultra-thin ferroelectric capacitors. In Chapter 3, "Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy," Prof. A.
  • Produktdetails
  • Multifunctional Thin Film Series
  • Verlag: Springer Netherlands
  • 2004
  • Seitenzahl: 306
  • Erscheinungstermin: 31. Januar 2004
  • Englisch
  • Abmessung: 241mm x 160mm x 22mm
  • Gewicht: 627g
  • ISBN-13: 9781402076305
  • ISBN-10: 1402076304
  • Artikelnr.: 14043304
Inhaltsangabe
List of Contributors. Preface. Acknowledgment. Part I: Electrical Characterization in Nanoscale Ferroelectric Capacitor. I. Testing and characterization of ferroelectric thin film capacitors; In Kyeong Yoo. 1. Test Circuits. 2. Hysteric Property. 3. Capacitance and Current. 4.Stored Energy. 5. Ageing. 6. Fatigue. 7. Imprint. 8. Leakage Current. 9. Electrical Degradation. 10. Breakdown. 11. Pyroelectric Effect. 12. Additional tests for commercial memory cells. References. II. Size effects in ferroelectric film capacitors: role of the film thickness and capacitor size; I. Stolichnov. 1. Introduction. 2. Size effects: role of the ferroelectric film thickness, impact of the passive layer and local charge injection. 3. Size effects: role of the capacitor size and impact of nonhomogeneous stress. 4. Conclusions and outlook. Acknowledgements. References. III. Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy; A. Gruverman. 1. Introduction. 2. Experimental Approach. 3. Variations in Ferroelectric Properties at the nanoscale. 4. PFM studies of retention behavior. 5. Nanoscale Leakage Current Mapping. 6. Conclusion. Acknowledgment. References. IV. Nanoscale dynamics in ferroelectric thin films; V. Nagarajan, R. Ramesh. 1. Introduction. 2. Thin Film Materials and Characterization. 3. Polarization Relaxation at the Nanoscale. 4. Nanoscale Piezoelectric and Ferroelectric Behavior. 5. Conclusions. Acknowledgements. References. V. Polarization switching and fatigue of ferroelectric thin films studied by PFM; Seungbum Hong. 1. Introduction. 2. Polarization switching. 3. Fatigue: suppression of switchable polarization. 4. Summary and Conclusion. Acknowledgments. References. Part II: Nano Domain Manipulation and Visualization in Ferroelectric Materials. VI. Domain switching and self-polarization in perovskite thin films; A. Roelofs, K. Szot, R. Waser. 1. Introduction. 2. PTO polycrystalline thin films on platinized silicon wafers. 3. PTO single grains. 4. Epitaxial PZT thin films on STO/LSCO. 5. The origin of self-polarization. References. VII. Ferroelectric domain structure observed by EFM; Z.G. Khim, J.W. Hong. 1. Introduction. 2. Detection Mechanism of DC-EFM. 3. Observation of Ferroelectric Domains. 4. Control of ferroelectric domains. 5. Conclusion. Acknowledgements. References. VIII. Polarization and charge dynamics in ferroelectric materials with SPM; S. Kalinin, D.A. Bonnell. 1. Introduction. 2. Principles of Non-contact Electrostatic SPMs. 3. Domain Structure Reconstruction from SPM. 4. Origins of Domain Contrast in EFM and SSPM. 5. Polarization and Charge Dynamics on the BaTiO3 (100) Surface. 6. Screening and Thermodynamics of Adsorption on BaTiO3 (100) Surfaces. 7. Domain Selective Photochemical Activity on Ferroelectric Surfa