Anatoliy Evtukh, Hans Hartnagel, Oktay Yilmazoglu, Hidenori Mimura, Dimitris Pavlidis
Vacuum Nanoelectronic Devices (eBook, PDF)
Novel Electron Sources and Applications
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Anatoliy Evtukh, Hans Hartnagel, Oktay Yilmazoglu, Hidenori Mimura, Dimitris Pavlidis
Vacuum Nanoelectronic Devices (eBook, PDF)
Novel Electron Sources and Applications
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Introducing up-to-date coverage of research in electron field emission from nanostructures, Vacuum Nanoelectronic Devices outlines the physics of quantum nanostructures, basic principles of electron field emission, and vacuum nanoelectronic devices operation, and offers as insight state-of-the-art and future researches and developments. This book also evaluates the results of research and development of novel quantum electron sources that will determine the future development of vacuum nanoelectronics. Further to this, the influence of quantum mechanical effects on high frequency vacuum…mehr
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Introducing up-to-date coverage of research in electron field emission from nanostructures, Vacuum Nanoelectronic Devices outlines the physics of quantum nanostructures, basic principles of electron field emission, and vacuum nanoelectronic devices operation, and offers as insight state-of-the-art and future researches and developments. This book also evaluates the results of research and development of novel quantum electron sources that will determine the future development of vacuum nanoelectronics. Further to this, the influence of quantum mechanical effects on high frequency vacuum nanoelectronic devices is also assessed. Key features: * In-depth description and analysis of the fundamentals of Quantum Electron effects in novel electron sources. * Comprehensive and up-to-date summary of the physics and technologies for THz sources for students of physical and engineering specialties and electronics engineers. * Unique coverage of quantum physical results for electron-field emission and novel electron sources with quantum effects, relevant for many applications such as electron microscopy, electron lithography, imaging and communication systems and signal processing. * New approaches for realization of electron sources with required and optimal parameters in electronic devices such as vacuum micro and nanoelectronics. This is an essential reference for researchers working in terahertz technology wanting to expand their knowledge of electron beam generation in vacuum and electron source quantum concepts. It is also valuable to advanced students in electronics engineering and physics who want to deepen their understanding of this topic. Ultimately, the progress of the quantum nanostructure theory and technology will promote the progress and development of electron sources as main part of vacuum macro-, micro- and nanoelectronics.
Produktdetails
- Produktdetails
- Verlag: John Wiley & Sons
- Seitenzahl: 472
- Erscheinungstermin: 16. März 2016
- Englisch
- ISBN-13: 9781119037965
- Artikelnr.: 44864135
- Verlag: John Wiley & Sons
- Seitenzahl: 472
- Erscheinungstermin: 16. März 2016
- Englisch
- ISBN-13: 9781119037965
- Artikelnr.: 44864135
Anatoliy Evtukh, National Academy of Sciences of Ukraine, Kyiv Hans Hartnagel, Technische Universität Darmstadt, Germany Oktay Yilmazoglu, Technische Universität Darmstadt, Germany Hidenori Mimura, Shizuoka University, Hamamatsu, Japan Dimitris Pavlidis, Boston University, USA
Preface xi Part I THEORETICAL BACKGROUNDS OF QUANTUM ELECTRON SOURCES 1
Transport through the Energy Barriers: Transition Probability 3 1.1
Transfer Matrix Technique 3 1.2 Tunneling through the Barriers and Wells 7
1.2.1 The Particle Moves on the Potential Step 7 1.2.2 The Particle Moves
above the Potential Barrier 13 1.2.3 The Particle Moves above the Well 16
1.2.4 The Particle Moves through the Potential Barrier 18 1.3 Tunneling
through Triangular Barrier at Electron Field Emission 22 1.4 Effect of
Trapped Charge in the Barrier 24 1.5 Transmission Probability in Resonant
Tunneling Structures: Coherent Tunneling 28 1.6 Lorentzian Approximation 32
1.7 Time Parameters of Resonant Tunneling 34 1.8 Transmission Probability
at Electric Fields 38 1.9 Temperature Effects 42 1.9.1 One Barrier 42 1.9.2
Double-Barrier Resonance Tunneling Structure 45 References 46 2 Supply
Function 48 2.1 Effective Mass Approximation 48 2.2 Electron in Potential
Box 49 2.3 Density of States 52 2.3.1 Three-Dimension (3D) Case 52 2.3.2
Two-Dimension (2D) Case 58 2.3.3 One-Dimension (1D) Case 62 2.3.4 Zero
Dimension (0D) Case 64 2.4 Fermi Distribution Function and Electron
Concentration 66 2.4.1 Electron Concentration for 3D Structures 67 2.4.2
Electron Concentration for 2D Structures 71 2.5 Supply Function at Electron
Field Emission 71 2.6 Electron in Potential Well 73 2.6.1 Quantum Well with
Parabolic Shape of the Potential 76 2.7 Two-Dimensional Electron Gas in
Heterojunction GaN-AlGaN 79 2.8 Electron Properties of Quantum-Size
Semiconductor Films 82 References 86 3 Band Bending and Work Function 87
3.1 Surface Space-Charge Region 87 3.2 Quantization of the Energy Spectrum
of Electrons in Surface Semiconductor Layer 91 3.3 Image Charge Potential
96 3.4 Work Function 99 3.4.1 Energy of Ionic Cores ( ion) 102 3.4.2
Exchange-Correlation Potential (Uxc) 103 3.4.3 Dipole Term (Delta ) 104
3.4.4 Work Function of Semiconductor 106 3.4.5 Work Function of Cathode
with Coating 107 3.5 Field and Temperature Dependences of Barrier Height
109 3.6 Influence of Surface Adatoms on Work Function 110 References 117 4
Current through the Barrier Structures 119 4.1 Current through One Barrier
Structure 119 4.1.1 Case 1: High Bias 122 4.1.2 Case 2: High Bias and Low
Temperature 122 4.1.3 Case 3: Small Bias: Linear Response 122 4.1.4 Case 4:
Small Bias and Low Temperature 123 4.2 Field Emission Current 123 4.3
Electron Field Emission from Semiconductors 127 4.4 Current through Double
Barrier Structures 134 4.4.1 Coherent Resonant Tunneling 134 4.4.2
Sequential Tunneling 139 4.5 Electron Field Emission from Multilayer
Nanostructures and Nanoparticles 142 4.5.1 Resonant Tunneling at Electron
Field Emission from Nanostructures 142 4.5.2 Two-Step Electron Tunneling
through Electronic States in a Nanoparticle 150 4.5.3 Single-Electron Field
Emission 159 References 167 5 Electron Energy Distribution 172 5.1 Theory
of Electron Energy Distribution 172 5.2 Experimental Set Up 175 5.3
Peculiarities of Electron Energy Distribution Spectra at Emission from
Semiconductors 177 5.3.1 Electron Energy Distribution of Electrons Emitted
from Semiconductors 179 5.4 Electron Energy Distribution at Emission from
Spindt-Type Metal Microtips 180 5.5 Electron Energy Distribution of
Electrons Emitter from Silicon 185 5.5.1 Electron Energy Distribution of
Electrons from Silicon Tips and Arrays 185 5.5.2 Electron Energy
Distribution of Electrons from Nanocrystalline Silicon 193 References 195
Part II NOVEL ELECTRON SOURCES WITH QUANTUM EFFECTS 6 Si Based Quantum
Cathodes 201 6.1 Introduction 201 6.2 Electron Field Emission from Porous
Silicon 202 6.3 Electron Field Emission from Silicon with Multilayer
Coating 207 6.4 Peculiarities of Electron Field Emission from Si
Nanoparticles 208 6.4.1 Electron Field Emission from Nanocomposite SiOx(Si)
and SiO2(Si) Films 208 6.4.2 Electron Field Emission from Si
Nanocrystalline Films 212 6.4.3 Laser Produced Silicon Tips with
SixOyNz(Si) Nanocomposite Film 215 6.5 Formation of Conducting Channels in
SiOx Coating Film 217 6.6 Electron Field Emission from Si Nanowires 222 6.7
Metal-Insulator-Metal Emitters 227 6.7.1 Effect of the Top Electrode 237
6.8 Conclusion 240 References 241 7 GaN Based Quantum Cathodes 246 7.1
Introduction 246 7.2 Electron Sources with Wide Bandgap Semiconductor Films
247 7.2.1 AlGaN Based Electron Sources 249 7.2.2 Solid-State Field
Controlled Emitter 255 7.2.3 Polarization Field Emission Enhancement Model
257 7.2.4 Emission from Nanocrystalline GaN Films 258 7.2.5 Graded Electron
Affinity Electron Source 262 7.3 Resonant Tunneling of Field Emitted
Electrons through Nanostructured Cathodes 263 7.3.1 Resonant-Tunneling
AlxGa1.xN-GaN Structures 263 7.3.2 Multilayer Planar Nanostructured
Solid-State Field-Controlled Emitter 266 7.3.3 Geometric Nanostructured
AlGaN/GaN Quantum Emitter 270 7.3.4 AlN/GaN Multiple-Barrier
Resonant-Tunneling Electron Emitter 273 7.4 Field Emission from GaN
Nanorods and Nanowires 277 7.4.1 Intervalley Carrier Redistribution at EFE
from Nanostructured Semiconductors 277 7.4.2 Electron Field Emission from
GaN Nanowire Film 288 7.4.3 Electron Field Emission from Patterned GaN
Nanowire Film 293 7.4.4 Electron Field Emission Properties of Individual
GaN Nanowires 295 7.4.5 Photon-Assisted Field Emission from GaN Nanorods
299 7.5 Conclusions 305 References 306 8 Carbon-Based Quantum Cathodes 314
8.1 Introduction 314 8.2 Diamond and Diamond Film Emitters 315 8.2.1
Negative Electron Affinity 315 8.2.2 Emission from Diamond and Diamond
Films 318 8.2.3 Models of EFE from Diamond 322 8.3 Diamond-Like Carbon Film
Emitters 324 8.3.1 Electrically Nanostructured Heterogeneous Emitters 324
8.3.2 Nanostructured Diamond-Like Carbon Films 326 8.3.3 Electron Field
Emission from DLC Films 328 8.3.4 Model of EFE from Si Tips Coated with DLC
Film 330 8.3.5 Electron Field Emission from Tips Coated with Ultrathin DLC
Films 334 8.3.6 Formation of Conductive Nanochannels in DLC Film 336 8.4
Carbon Nanotube Emitters 340 8.4.1 The Peculiarities of Electron Field
Emission from CNTs 341 8.4.2 Stability of Electron Field Emission from CNTs
346 8.4.3 Models of Field Emission from CNTs 350 8.5 Electron Emission from
Graphene and Nanocarbon 352 8.5.1 Electron Emission from Graphene 352 8.5.2
Electron Emission from CNT-Graphene Composites 355 8.5.3 Electron Emission
from Nanocarbon 358 8.6 Conclusion 362 References 362 9 Quantum Electron
Sources for High Frequency Applications 375 9.1 Introduction 375 9.2 High
Frequency Application of Resonant Tunneling Diode 376 9.3 Field Emission
Resonant Tunneling Diode 380 9.3.1 Direct Emission Current 381 9.3.2
Microwave Characteristics 383 9.3.3 Calculation of the Direct Emission
Current 385 9.3.4 Calculation of Microwave Parameters 386 9.4 Generation of
THz Signals in Field Emission Vacuum Devices 391 9.5 AlGaN/GaN Superlattice
for THz Generation 398 9.6 Gunn Effect at Electron Field Emission 415 9.7
Field Emission Microwave Sources 420 9.7.1 Modulation of Gated FEAs 422
9.7.2 Current Density 432 9.7.3 CNT FEAs 436 9.8 Conclusion 440 References
440 Index 447
Transport through the Energy Barriers: Transition Probability 3 1.1
Transfer Matrix Technique 3 1.2 Tunneling through the Barriers and Wells 7
1.2.1 The Particle Moves on the Potential Step 7 1.2.2 The Particle Moves
above the Potential Barrier 13 1.2.3 The Particle Moves above the Well 16
1.2.4 The Particle Moves through the Potential Barrier 18 1.3 Tunneling
through Triangular Barrier at Electron Field Emission 22 1.4 Effect of
Trapped Charge in the Barrier 24 1.5 Transmission Probability in Resonant
Tunneling Structures: Coherent Tunneling 28 1.6 Lorentzian Approximation 32
1.7 Time Parameters of Resonant Tunneling 34 1.8 Transmission Probability
at Electric Fields 38 1.9 Temperature Effects 42 1.9.1 One Barrier 42 1.9.2
Double-Barrier Resonance Tunneling Structure 45 References 46 2 Supply
Function 48 2.1 Effective Mass Approximation 48 2.2 Electron in Potential
Box 49 2.3 Density of States 52 2.3.1 Three-Dimension (3D) Case 52 2.3.2
Two-Dimension (2D) Case 58 2.3.3 One-Dimension (1D) Case 62 2.3.4 Zero
Dimension (0D) Case 64 2.4 Fermi Distribution Function and Electron
Concentration 66 2.4.1 Electron Concentration for 3D Structures 67 2.4.2
Electron Concentration for 2D Structures 71 2.5 Supply Function at Electron
Field Emission 71 2.6 Electron in Potential Well 73 2.6.1 Quantum Well with
Parabolic Shape of the Potential 76 2.7 Two-Dimensional Electron Gas in
Heterojunction GaN-AlGaN 79 2.8 Electron Properties of Quantum-Size
Semiconductor Films 82 References 86 3 Band Bending and Work Function 87
3.1 Surface Space-Charge Region 87 3.2 Quantization of the Energy Spectrum
of Electrons in Surface Semiconductor Layer 91 3.3 Image Charge Potential
96 3.4 Work Function 99 3.4.1 Energy of Ionic Cores ( ion) 102 3.4.2
Exchange-Correlation Potential (Uxc) 103 3.4.3 Dipole Term (Delta ) 104
3.4.4 Work Function of Semiconductor 106 3.4.5 Work Function of Cathode
with Coating 107 3.5 Field and Temperature Dependences of Barrier Height
109 3.6 Influence of Surface Adatoms on Work Function 110 References 117 4
Current through the Barrier Structures 119 4.1 Current through One Barrier
Structure 119 4.1.1 Case 1: High Bias 122 4.1.2 Case 2: High Bias and Low
Temperature 122 4.1.3 Case 3: Small Bias: Linear Response 122 4.1.4 Case 4:
Small Bias and Low Temperature 123 4.2 Field Emission Current 123 4.3
Electron Field Emission from Semiconductors 127 4.4 Current through Double
Barrier Structures 134 4.4.1 Coherent Resonant Tunneling 134 4.4.2
Sequential Tunneling 139 4.5 Electron Field Emission from Multilayer
Nanostructures and Nanoparticles 142 4.5.1 Resonant Tunneling at Electron
Field Emission from Nanostructures 142 4.5.2 Two-Step Electron Tunneling
through Electronic States in a Nanoparticle 150 4.5.3 Single-Electron Field
Emission 159 References 167 5 Electron Energy Distribution 172 5.1 Theory
of Electron Energy Distribution 172 5.2 Experimental Set Up 175 5.3
Peculiarities of Electron Energy Distribution Spectra at Emission from
Semiconductors 177 5.3.1 Electron Energy Distribution of Electrons Emitted
from Semiconductors 179 5.4 Electron Energy Distribution at Emission from
Spindt-Type Metal Microtips 180 5.5 Electron Energy Distribution of
Electrons Emitter from Silicon 185 5.5.1 Electron Energy Distribution of
Electrons from Silicon Tips and Arrays 185 5.5.2 Electron Energy
Distribution of Electrons from Nanocrystalline Silicon 193 References 195
Part II NOVEL ELECTRON SOURCES WITH QUANTUM EFFECTS 6 Si Based Quantum
Cathodes 201 6.1 Introduction 201 6.2 Electron Field Emission from Porous
Silicon 202 6.3 Electron Field Emission from Silicon with Multilayer
Coating 207 6.4 Peculiarities of Electron Field Emission from Si
Nanoparticles 208 6.4.1 Electron Field Emission from Nanocomposite SiOx(Si)
and SiO2(Si) Films 208 6.4.2 Electron Field Emission from Si
Nanocrystalline Films 212 6.4.3 Laser Produced Silicon Tips with
SixOyNz(Si) Nanocomposite Film 215 6.5 Formation of Conducting Channels in
SiOx Coating Film 217 6.6 Electron Field Emission from Si Nanowires 222 6.7
Metal-Insulator-Metal Emitters 227 6.7.1 Effect of the Top Electrode 237
6.8 Conclusion 240 References 241 7 GaN Based Quantum Cathodes 246 7.1
Introduction 246 7.2 Electron Sources with Wide Bandgap Semiconductor Films
247 7.2.1 AlGaN Based Electron Sources 249 7.2.2 Solid-State Field
Controlled Emitter 255 7.2.3 Polarization Field Emission Enhancement Model
257 7.2.4 Emission from Nanocrystalline GaN Films 258 7.2.5 Graded Electron
Affinity Electron Source 262 7.3 Resonant Tunneling of Field Emitted
Electrons through Nanostructured Cathodes 263 7.3.1 Resonant-Tunneling
AlxGa1.xN-GaN Structures 263 7.3.2 Multilayer Planar Nanostructured
Solid-State Field-Controlled Emitter 266 7.3.3 Geometric Nanostructured
AlGaN/GaN Quantum Emitter 270 7.3.4 AlN/GaN Multiple-Barrier
Resonant-Tunneling Electron Emitter 273 7.4 Field Emission from GaN
Nanorods and Nanowires 277 7.4.1 Intervalley Carrier Redistribution at EFE
from Nanostructured Semiconductors 277 7.4.2 Electron Field Emission from
GaN Nanowire Film 288 7.4.3 Electron Field Emission from Patterned GaN
Nanowire Film 293 7.4.4 Electron Field Emission Properties of Individual
GaN Nanowires 295 7.4.5 Photon-Assisted Field Emission from GaN Nanorods
299 7.5 Conclusions 305 References 306 8 Carbon-Based Quantum Cathodes 314
8.1 Introduction 314 8.2 Diamond and Diamond Film Emitters 315 8.2.1
Negative Electron Affinity 315 8.2.2 Emission from Diamond and Diamond
Films 318 8.2.3 Models of EFE from Diamond 322 8.3 Diamond-Like Carbon Film
Emitters 324 8.3.1 Electrically Nanostructured Heterogeneous Emitters 324
8.3.2 Nanostructured Diamond-Like Carbon Films 326 8.3.3 Electron Field
Emission from DLC Films 328 8.3.4 Model of EFE from Si Tips Coated with DLC
Film 330 8.3.5 Electron Field Emission from Tips Coated with Ultrathin DLC
Films 334 8.3.6 Formation of Conductive Nanochannels in DLC Film 336 8.4
Carbon Nanotube Emitters 340 8.4.1 The Peculiarities of Electron Field
Emission from CNTs 341 8.4.2 Stability of Electron Field Emission from CNTs
346 8.4.3 Models of Field Emission from CNTs 350 8.5 Electron Emission from
Graphene and Nanocarbon 352 8.5.1 Electron Emission from Graphene 352 8.5.2
Electron Emission from CNT-Graphene Composites 355 8.5.3 Electron Emission
from Nanocarbon 358 8.6 Conclusion 362 References 362 9 Quantum Electron
Sources for High Frequency Applications 375 9.1 Introduction 375 9.2 High
Frequency Application of Resonant Tunneling Diode 376 9.3 Field Emission
Resonant Tunneling Diode 380 9.3.1 Direct Emission Current 381 9.3.2
Microwave Characteristics 383 9.3.3 Calculation of the Direct Emission
Current 385 9.3.4 Calculation of Microwave Parameters 386 9.4 Generation of
THz Signals in Field Emission Vacuum Devices 391 9.5 AlGaN/GaN Superlattice
for THz Generation 398 9.6 Gunn Effect at Electron Field Emission 415 9.7
Field Emission Microwave Sources 420 9.7.1 Modulation of Gated FEAs 422
9.7.2 Current Density 432 9.7.3 CNT FEAs 436 9.8 Conclusion 440 References
440 Index 447
Preface xi Part I THEORETICAL BACKGROUNDS OF QUANTUM ELECTRON SOURCES 1
Transport through the Energy Barriers: Transition Probability 3 1.1
Transfer Matrix Technique 3 1.2 Tunneling through the Barriers and Wells 7
1.2.1 The Particle Moves on the Potential Step 7 1.2.2 The Particle Moves
above the Potential Barrier 13 1.2.3 The Particle Moves above the Well 16
1.2.4 The Particle Moves through the Potential Barrier 18 1.3 Tunneling
through Triangular Barrier at Electron Field Emission 22 1.4 Effect of
Trapped Charge in the Barrier 24 1.5 Transmission Probability in Resonant
Tunneling Structures: Coherent Tunneling 28 1.6 Lorentzian Approximation 32
1.7 Time Parameters of Resonant Tunneling 34 1.8 Transmission Probability
at Electric Fields 38 1.9 Temperature Effects 42 1.9.1 One Barrier 42 1.9.2
Double-Barrier Resonance Tunneling Structure 45 References 46 2 Supply
Function 48 2.1 Effective Mass Approximation 48 2.2 Electron in Potential
Box 49 2.3 Density of States 52 2.3.1 Three-Dimension (3D) Case 52 2.3.2
Two-Dimension (2D) Case 58 2.3.3 One-Dimension (1D) Case 62 2.3.4 Zero
Dimension (0D) Case 64 2.4 Fermi Distribution Function and Electron
Concentration 66 2.4.1 Electron Concentration for 3D Structures 67 2.4.2
Electron Concentration for 2D Structures 71 2.5 Supply Function at Electron
Field Emission 71 2.6 Electron in Potential Well 73 2.6.1 Quantum Well with
Parabolic Shape of the Potential 76 2.7 Two-Dimensional Electron Gas in
Heterojunction GaN-AlGaN 79 2.8 Electron Properties of Quantum-Size
Semiconductor Films 82 References 86 3 Band Bending and Work Function 87
3.1 Surface Space-Charge Region 87 3.2 Quantization of the Energy Spectrum
of Electrons in Surface Semiconductor Layer 91 3.3 Image Charge Potential
96 3.4 Work Function 99 3.4.1 Energy of Ionic Cores ( ion) 102 3.4.2
Exchange-Correlation Potential (Uxc) 103 3.4.3 Dipole Term (Delta ) 104
3.4.4 Work Function of Semiconductor 106 3.4.5 Work Function of Cathode
with Coating 107 3.5 Field and Temperature Dependences of Barrier Height
109 3.6 Influence of Surface Adatoms on Work Function 110 References 117 4
Current through the Barrier Structures 119 4.1 Current through One Barrier
Structure 119 4.1.1 Case 1: High Bias 122 4.1.2 Case 2: High Bias and Low
Temperature 122 4.1.3 Case 3: Small Bias: Linear Response 122 4.1.4 Case 4:
Small Bias and Low Temperature 123 4.2 Field Emission Current 123 4.3
Electron Field Emission from Semiconductors 127 4.4 Current through Double
Barrier Structures 134 4.4.1 Coherent Resonant Tunneling 134 4.4.2
Sequential Tunneling 139 4.5 Electron Field Emission from Multilayer
Nanostructures and Nanoparticles 142 4.5.1 Resonant Tunneling at Electron
Field Emission from Nanostructures 142 4.5.2 Two-Step Electron Tunneling
through Electronic States in a Nanoparticle 150 4.5.3 Single-Electron Field
Emission 159 References 167 5 Electron Energy Distribution 172 5.1 Theory
of Electron Energy Distribution 172 5.2 Experimental Set Up 175 5.3
Peculiarities of Electron Energy Distribution Spectra at Emission from
Semiconductors 177 5.3.1 Electron Energy Distribution of Electrons Emitted
from Semiconductors 179 5.4 Electron Energy Distribution at Emission from
Spindt-Type Metal Microtips 180 5.5 Electron Energy Distribution of
Electrons Emitter from Silicon 185 5.5.1 Electron Energy Distribution of
Electrons from Silicon Tips and Arrays 185 5.5.2 Electron Energy
Distribution of Electrons from Nanocrystalline Silicon 193 References 195
Part II NOVEL ELECTRON SOURCES WITH QUANTUM EFFECTS 6 Si Based Quantum
Cathodes 201 6.1 Introduction 201 6.2 Electron Field Emission from Porous
Silicon 202 6.3 Electron Field Emission from Silicon with Multilayer
Coating 207 6.4 Peculiarities of Electron Field Emission from Si
Nanoparticles 208 6.4.1 Electron Field Emission from Nanocomposite SiOx(Si)
and SiO2(Si) Films 208 6.4.2 Electron Field Emission from Si
Nanocrystalline Films 212 6.4.3 Laser Produced Silicon Tips with
SixOyNz(Si) Nanocomposite Film 215 6.5 Formation of Conducting Channels in
SiOx Coating Film 217 6.6 Electron Field Emission from Si Nanowires 222 6.7
Metal-Insulator-Metal Emitters 227 6.7.1 Effect of the Top Electrode 237
6.8 Conclusion 240 References 241 7 GaN Based Quantum Cathodes 246 7.1
Introduction 246 7.2 Electron Sources with Wide Bandgap Semiconductor Films
247 7.2.1 AlGaN Based Electron Sources 249 7.2.2 Solid-State Field
Controlled Emitter 255 7.2.3 Polarization Field Emission Enhancement Model
257 7.2.4 Emission from Nanocrystalline GaN Films 258 7.2.5 Graded Electron
Affinity Electron Source 262 7.3 Resonant Tunneling of Field Emitted
Electrons through Nanostructured Cathodes 263 7.3.1 Resonant-Tunneling
AlxGa1.xN-GaN Structures 263 7.3.2 Multilayer Planar Nanostructured
Solid-State Field-Controlled Emitter 266 7.3.3 Geometric Nanostructured
AlGaN/GaN Quantum Emitter 270 7.3.4 AlN/GaN Multiple-Barrier
Resonant-Tunneling Electron Emitter 273 7.4 Field Emission from GaN
Nanorods and Nanowires 277 7.4.1 Intervalley Carrier Redistribution at EFE
from Nanostructured Semiconductors 277 7.4.2 Electron Field Emission from
GaN Nanowire Film 288 7.4.3 Electron Field Emission from Patterned GaN
Nanowire Film 293 7.4.4 Electron Field Emission Properties of Individual
GaN Nanowires 295 7.4.5 Photon-Assisted Field Emission from GaN Nanorods
299 7.5 Conclusions 305 References 306 8 Carbon-Based Quantum Cathodes 314
8.1 Introduction 314 8.2 Diamond and Diamond Film Emitters 315 8.2.1
Negative Electron Affinity 315 8.2.2 Emission from Diamond and Diamond
Films 318 8.2.3 Models of EFE from Diamond 322 8.3 Diamond-Like Carbon Film
Emitters 324 8.3.1 Electrically Nanostructured Heterogeneous Emitters 324
8.3.2 Nanostructured Diamond-Like Carbon Films 326 8.3.3 Electron Field
Emission from DLC Films 328 8.3.4 Model of EFE from Si Tips Coated with DLC
Film 330 8.3.5 Electron Field Emission from Tips Coated with Ultrathin DLC
Films 334 8.3.6 Formation of Conductive Nanochannels in DLC Film 336 8.4
Carbon Nanotube Emitters 340 8.4.1 The Peculiarities of Electron Field
Emission from CNTs 341 8.4.2 Stability of Electron Field Emission from CNTs
346 8.4.3 Models of Field Emission from CNTs 350 8.5 Electron Emission from
Graphene and Nanocarbon 352 8.5.1 Electron Emission from Graphene 352 8.5.2
Electron Emission from CNT-Graphene Composites 355 8.5.3 Electron Emission
from Nanocarbon 358 8.6 Conclusion 362 References 362 9 Quantum Electron
Sources for High Frequency Applications 375 9.1 Introduction 375 9.2 High
Frequency Application of Resonant Tunneling Diode 376 9.3 Field Emission
Resonant Tunneling Diode 380 9.3.1 Direct Emission Current 381 9.3.2
Microwave Characteristics 383 9.3.3 Calculation of the Direct Emission
Current 385 9.3.4 Calculation of Microwave Parameters 386 9.4 Generation of
THz Signals in Field Emission Vacuum Devices 391 9.5 AlGaN/GaN Superlattice
for THz Generation 398 9.6 Gunn Effect at Electron Field Emission 415 9.7
Field Emission Microwave Sources 420 9.7.1 Modulation of Gated FEAs 422
9.7.2 Current Density 432 9.7.3 CNT FEAs 436 9.8 Conclusion 440 References
440 Index 447
Transport through the Energy Barriers: Transition Probability 3 1.1
Transfer Matrix Technique 3 1.2 Tunneling through the Barriers and Wells 7
1.2.1 The Particle Moves on the Potential Step 7 1.2.2 The Particle Moves
above the Potential Barrier 13 1.2.3 The Particle Moves above the Well 16
1.2.4 The Particle Moves through the Potential Barrier 18 1.3 Tunneling
through Triangular Barrier at Electron Field Emission 22 1.4 Effect of
Trapped Charge in the Barrier 24 1.5 Transmission Probability in Resonant
Tunneling Structures: Coherent Tunneling 28 1.6 Lorentzian Approximation 32
1.7 Time Parameters of Resonant Tunneling 34 1.8 Transmission Probability
at Electric Fields 38 1.9 Temperature Effects 42 1.9.1 One Barrier 42 1.9.2
Double-Barrier Resonance Tunneling Structure 45 References 46 2 Supply
Function 48 2.1 Effective Mass Approximation 48 2.2 Electron in Potential
Box 49 2.3 Density of States 52 2.3.1 Three-Dimension (3D) Case 52 2.3.2
Two-Dimension (2D) Case 58 2.3.3 One-Dimension (1D) Case 62 2.3.4 Zero
Dimension (0D) Case 64 2.4 Fermi Distribution Function and Electron
Concentration 66 2.4.1 Electron Concentration for 3D Structures 67 2.4.2
Electron Concentration for 2D Structures 71 2.5 Supply Function at Electron
Field Emission 71 2.6 Electron in Potential Well 73 2.6.1 Quantum Well with
Parabolic Shape of the Potential 76 2.7 Two-Dimensional Electron Gas in
Heterojunction GaN-AlGaN 79 2.8 Electron Properties of Quantum-Size
Semiconductor Films 82 References 86 3 Band Bending and Work Function 87
3.1 Surface Space-Charge Region 87 3.2 Quantization of the Energy Spectrum
of Electrons in Surface Semiconductor Layer 91 3.3 Image Charge Potential
96 3.4 Work Function 99 3.4.1 Energy of Ionic Cores ( ion) 102 3.4.2
Exchange-Correlation Potential (Uxc) 103 3.4.3 Dipole Term (Delta ) 104
3.4.4 Work Function of Semiconductor 106 3.4.5 Work Function of Cathode
with Coating 107 3.5 Field and Temperature Dependences of Barrier Height
109 3.6 Influence of Surface Adatoms on Work Function 110 References 117 4
Current through the Barrier Structures 119 4.1 Current through One Barrier
Structure 119 4.1.1 Case 1: High Bias 122 4.1.2 Case 2: High Bias and Low
Temperature 122 4.1.3 Case 3: Small Bias: Linear Response 122 4.1.4 Case 4:
Small Bias and Low Temperature 123 4.2 Field Emission Current 123 4.3
Electron Field Emission from Semiconductors 127 4.4 Current through Double
Barrier Structures 134 4.4.1 Coherent Resonant Tunneling 134 4.4.2
Sequential Tunneling 139 4.5 Electron Field Emission from Multilayer
Nanostructures and Nanoparticles 142 4.5.1 Resonant Tunneling at Electron
Field Emission from Nanostructures 142 4.5.2 Two-Step Electron Tunneling
through Electronic States in a Nanoparticle 150 4.5.3 Single-Electron Field
Emission 159 References 167 5 Electron Energy Distribution 172 5.1 Theory
of Electron Energy Distribution 172 5.2 Experimental Set Up 175 5.3
Peculiarities of Electron Energy Distribution Spectra at Emission from
Semiconductors 177 5.3.1 Electron Energy Distribution of Electrons Emitted
from Semiconductors 179 5.4 Electron Energy Distribution at Emission from
Spindt-Type Metal Microtips 180 5.5 Electron Energy Distribution of
Electrons Emitter from Silicon 185 5.5.1 Electron Energy Distribution of
Electrons from Silicon Tips and Arrays 185 5.5.2 Electron Energy
Distribution of Electrons from Nanocrystalline Silicon 193 References 195
Part II NOVEL ELECTRON SOURCES WITH QUANTUM EFFECTS 6 Si Based Quantum
Cathodes 201 6.1 Introduction 201 6.2 Electron Field Emission from Porous
Silicon 202 6.3 Electron Field Emission from Silicon with Multilayer
Coating 207 6.4 Peculiarities of Electron Field Emission from Si
Nanoparticles 208 6.4.1 Electron Field Emission from Nanocomposite SiOx(Si)
and SiO2(Si) Films 208 6.4.2 Electron Field Emission from Si
Nanocrystalline Films 212 6.4.3 Laser Produced Silicon Tips with
SixOyNz(Si) Nanocomposite Film 215 6.5 Formation of Conducting Channels in
SiOx Coating Film 217 6.6 Electron Field Emission from Si Nanowires 222 6.7
Metal-Insulator-Metal Emitters 227 6.7.1 Effect of the Top Electrode 237
6.8 Conclusion 240 References 241 7 GaN Based Quantum Cathodes 246 7.1
Introduction 246 7.2 Electron Sources with Wide Bandgap Semiconductor Films
247 7.2.1 AlGaN Based Electron Sources 249 7.2.2 Solid-State Field
Controlled Emitter 255 7.2.3 Polarization Field Emission Enhancement Model
257 7.2.4 Emission from Nanocrystalline GaN Films 258 7.2.5 Graded Electron
Affinity Electron Source 262 7.3 Resonant Tunneling of Field Emitted
Electrons through Nanostructured Cathodes 263 7.3.1 Resonant-Tunneling
AlxGa1.xN-GaN Structures 263 7.3.2 Multilayer Planar Nanostructured
Solid-State Field-Controlled Emitter 266 7.3.3 Geometric Nanostructured
AlGaN/GaN Quantum Emitter 270 7.3.4 AlN/GaN Multiple-Barrier
Resonant-Tunneling Electron Emitter 273 7.4 Field Emission from GaN
Nanorods and Nanowires 277 7.4.1 Intervalley Carrier Redistribution at EFE
from Nanostructured Semiconductors 277 7.4.2 Electron Field Emission from
GaN Nanowire Film 288 7.4.3 Electron Field Emission from Patterned GaN
Nanowire Film 293 7.4.4 Electron Field Emission Properties of Individual
GaN Nanowires 295 7.4.5 Photon-Assisted Field Emission from GaN Nanorods
299 7.5 Conclusions 305 References 306 8 Carbon-Based Quantum Cathodes 314
8.1 Introduction 314 8.2 Diamond and Diamond Film Emitters 315 8.2.1
Negative Electron Affinity 315 8.2.2 Emission from Diamond and Diamond
Films 318 8.2.3 Models of EFE from Diamond 322 8.3 Diamond-Like Carbon Film
Emitters 324 8.3.1 Electrically Nanostructured Heterogeneous Emitters 324
8.3.2 Nanostructured Diamond-Like Carbon Films 326 8.3.3 Electron Field
Emission from DLC Films 328 8.3.4 Model of EFE from Si Tips Coated with DLC
Film 330 8.3.5 Electron Field Emission from Tips Coated with Ultrathin DLC
Films 334 8.3.6 Formation of Conductive Nanochannels in DLC Film 336 8.4
Carbon Nanotube Emitters 340 8.4.1 The Peculiarities of Electron Field
Emission from CNTs 341 8.4.2 Stability of Electron Field Emission from CNTs
346 8.4.3 Models of Field Emission from CNTs 350 8.5 Electron Emission from
Graphene and Nanocarbon 352 8.5.1 Electron Emission from Graphene 352 8.5.2
Electron Emission from CNT-Graphene Composites 355 8.5.3 Electron Emission
from Nanocarbon 358 8.6 Conclusion 362 References 362 9 Quantum Electron
Sources for High Frequency Applications 375 9.1 Introduction 375 9.2 High
Frequency Application of Resonant Tunneling Diode 376 9.3 Field Emission
Resonant Tunneling Diode 380 9.3.1 Direct Emission Current 381 9.3.2
Microwave Characteristics 383 9.3.3 Calculation of the Direct Emission
Current 385 9.3.4 Calculation of Microwave Parameters 386 9.4 Generation of
THz Signals in Field Emission Vacuum Devices 391 9.5 AlGaN/GaN Superlattice
for THz Generation 398 9.6 Gunn Effect at Electron Field Emission 415 9.7
Field Emission Microwave Sources 420 9.7.1 Modulation of Gated FEAs 422
9.7.2 Current Density 432 9.7.3 CNT FEAs 436 9.8 Conclusion 440 References
440 Index 447