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Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently, these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. For example, narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. In this book, the authors offer clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered…mehr

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Produktbeschreibung
Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently, these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. For example, narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. In this book, the authors offer clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. A thorough treatment of the properties of low-dimensional systems and their relation to infrared applications is provided. In addition to covering the technology of photoconductive detectors, photovoltaic detectors, metal-insulator-semiconductor devices, quantum well infrared photodetectors, infrared lasers, and single photon detectors, Physics and Properties of Narrow Gap Semiconductors helps readers to understand semiconductor physics and related areas of materials science and how they relate to advanced opto-electronic devices. TOC:Introduction.- Crystal.- The band structure.- Optical properties.- Transport poperties.-Lattice Vibrations.

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  • Produktdetails
  • Verlag: Springer-Verlag GmbH
  • Erscheinungstermin: 21.11.2007
  • Englisch
  • ISBN-13: 9780387748016
  • Artikelnr.: 37287776
Inhaltsangabe
Introduction. -Narrow Gap Semiconductors. -Modern Physics of Infrared Photo-Electronics. -References. - Crystal. - The Basic Theory of Crystal Growth. -Growth Method for Bulk Crystal. -Liquid Phase Epitaxy. -Molecular Beam Epitaxy Growth of Thin Films. -Perfection of Crystals. -References. - The Band Structure
3.1 A Brief Description of Energy Band Structures
3.2 The Perturbation Method and its Eigen Values
3.3 The Calculation of Band Structures
3.4 Parameters of Energy Bands
References
Chapter 4 Optical Properties
4.1 Optical Constants and Dielectric Functions
4.2 Interband Optical Transitions: Theory and Experiment
4.3 Intrinsic Absorption Spectrum Expressions
4.4 Direct Measurements of Optical Constants
4.5 Optical Effects of Free Carriers
4.6 Optical Characterization of Materials
References
Chapter 5 Transport Properties
5.1 Carrier Concentration and the Fermi Level
5.2 Conductivity and Mobility
5.3 Transport Properties in a Magnetic Field
5.4 Mobility Spectrum in Multi-Carrier Systems
5.5 Quantum Effects
5.6 Thermo-Electronic Effects
References
Chapter 6 Lattice Vibrations
6.1 Phonon Spectra
6.2 Reflectivity Spectra of Phonons
6.3 Transmittance Spectra of Phonons
6.4 Phonon Raman Scattering
References