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Tapping into the author's extensive expertise in the diode-laser field, Semiconductor Laser Engineering, Reliability and Diagnostics provides a comprehensive account of engineering and implementing high-power single transverse mode lasers with a focus on practical guidelines for the use in an industrial environment. Addressing the need for a text that bridges fundamentals and devices, this groundbreaking text introduces the basic concepts and techniques of laser reliability engineering and explains the details of how to set up and operate a typical diode laser reliability test program used in…mehr

Produktbeschreibung
Tapping into the author's extensive expertise in the diode-laser field, Semiconductor Laser Engineering, Reliability and Diagnostics provides a comprehensive account of engineering and implementing high-power single transverse mode lasers with a focus on practical guidelines for the use in an industrial environment. Addressing the need for a text that bridges fundamentals and devices, this groundbreaking text introduces the basic concepts and techniques of laser reliability engineering and explains the details of how to set up and operate a typical diode laser reliability test program used in industry for product qualification.
This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performance- and reliability-impacting factors such as temperature, stress and material instabilities. Further key features include: * practical design guidelines that consider also reliability related effects, key laser robustness factors, basic laser fabrication and packaging issues; * detailed discussion of diagnostic investigations of diode lasers, the fundamentals of the applied approaches and techniques, many of them pioneered by the author to be fit-for-purpose and novel in the application; * systematic insight into laser degradation modes such as catastrophic optical damage, and a wide range of technologies to increase the optical strength of diode lasers; * coverage of basic concepts and techniques of laser reliability engineering with details on a standard commercial high power laser reliability test program. Semiconductor Laser Engineering, Reliability and Diagnostics reflects the extensive expertise of the author in the diode laser field both as a top scientific researcher as well as a key developer of high-power highly reliable devices. With invaluable practical advice, this new reference book is suited to practising researchers in diode laser technologies, and to postgraduate engineering students. Dr. Peter W. Epperlein is Technology Consultant with his own semiconductor technology consulting business Pwe-PhotonicsElectronics-IssueResolution in the UK. He looks back at a thirty years career in cutting edge photonics and electronics industries with focus on emerging technologies, both in global and start-up companies, including IBM, Hewlett-Packard, Agilent Technologies, Philips/NXP, Essient Photonics and IBM/JDSU Laser Enterprise. He holds Pre-Dipl. (B.Sc.), Dipl. Phys. (M.Sc.) and Dr. rer. nat. (Ph.D.) degrees in physics, magna cum laude, from the University of Stuttgart, Germany. Dr. Epperlein is an internationally recognized expert in compound semiconductor and diode laser technologies. He has accomplished R&D in many device areas such as semiconductor lasers, LEDs, optical modulators, quantum well devices, resonant tunneling devices, FETs, and superconducting tunnel junctions and integrated circuits. His pioneering work on sophisticated diagnostic research has led to many world's first reports and has been adopted by other researchers in academia and industry. He authored more than seventy peer-reviewed journal papers, published more than ten invention disclosures in the IBM Technical Disclosure Bulletin, has served as reviewer of numerous proposals for publication in technical journals, and has won five IBM Research Division Awards. His key achievements include the design and fabrication of high-power, highly reliable, single mode diode lasers.
  • Produktdetails
  • Verlag: John Wiley & Sons
  • Artikelnr. des Verlages: 1W119990330
  • Seitenzahl: 522
  • Erscheinungstermin: 7. März 2013
  • Englisch
  • Abmessung: 235mm x 157mm x 32mm
  • Gewicht: 901g
  • ISBN-13: 9781119990338
  • ISBN-10: 1119990335
  • Artikelnr.: 35481833
Autorenporträt
Dr. Peter W. Epperlein is Technology Consultant with his own semiconductor technology consulting business Pwe-PhotonicsElectronics-IssueResolution in the UK. He looks back at a thirty years career in cutting edge photonics and electronics industries with focus on emerging technologies, both in global and start-up companies, including IBM, Hewlett-Packard, Agilent Technologies, Philips/NXP, Essient Photonics and IBM/JDSU Laser Enterprise. He holds Pre-Dipl. (B.Sc.), Dipl. Phys. (M.Sc.) and Dr. rer. nat. (Ph.D.) degrees in physics, magna cum laude, from the University of Stuttgart, Germany. Dr. Epperlein is an internationally recognized expert in compound semiconductor and diode laser technologies. He has accomplished R&D in many device areas such as semiconductor lasers, LEDs, optical modulators, quantum well devices, resonant tunneling devices, FETs, and superconducting tunnel junctions and integrated circuits. His pioneering work on sophisticated diagnostic research has led to many world's first reports and has been adopted by other researchers in academia and industry. He authored more than seventy peer-reviewed journal papers, published more than ten invention disclosures in the IBM Technical Disclosure Bulletin, has served as reviewer of numerous proposals for publication in technical journals, and has won five IBM Research Division Awards. His key achievements include the design and fabrication of high-power, highly reliable, single mode diode lasers.
Inhaltsangabe
Preface xix About the author xxiii PART 1 DIODE LASER ENGINEERING 1 Overview 1 1 Basic diode laser engineering principles 3 Introduction 4 1.1 Brief recapitulation 4 Wavelength adjustment and tunability 22 Strained quantum well lasers 23 Optical power supply 25 Temperature characteristics 26 1.2 Optical output power
diverse aspects 31 References 96 2 Design considerations for high
power single spatial mode operation 101 Introduction 102 2.1 Basic high
power design approaches 103 Materials 108 Layer doping 113 Layer doping
n
type doping 113 Layer doping
p
type doping 113 Graded
index layer doping 114 Integrity
spacer layers 114 Integrity
prelayers 115 Integrity
deep levels 115 Quantum wells versus quantum dots 116 Number of quantum wells 119 Thin waveguides 122 Broad waveguides and decoupled confinement heterostructures 122 Low refractive index mode puller layers 124 Optical traps and asymmetric waveguide structures 126 Spread index or passive waveguides 127 Leaky waveguides 128 Spot
size converters 128 Photonic bandgap crystal 130 2.2 Single spatial mode and kink control 146 Waveguide geometry; internal physical mechanisms 150 Figures of merit 152 Transverse vertical mode expansion; mirror reflectivity; laser length 153 Absorptive metal layers 154 Highly resistive regions 156 Curved waveguides 157 Tilted mirrors 158 Beam
steering kinks 158 Kink versus cavity length dependence 159 2.3 High
power, single spatial mode, narrow ridge waveguide lasers 162 2.4 Selected large
area laser concepts and techniques 176 References 201 PART 2 DIODE LASER RELIABILITY 211 Overview 211 3 Basic diode laser degradation modes 213 Introduction 213 3.1 Degradation and stability criteria of critical diode laser characteristics 214 3.2 Classification of degradation modes 222 Mirror degradation 222 Contact degradation 223 Solder degradation 224 Active region degradation and junction degradation 224 Features and causes of rapid degradation 226 Elimination of rapid degradation 229 Features and causes of gradual degradation 229 Elimination of gradual degradation 230 Features and causes of sudden degradation 231 Elimination of sudden degradation 233 3.3 Key laser robustness factors 234 References 241 4 Optical strength engineering 245 Introduction 245 4.1 Mirror facet properties
physical origins of failure 246 4.2 Mirror facet passivation and protection 249 4.3 Nonabsorbing mirror technologies 259 Ion implantation and annealing 263 Selective diffusion techniques 265 Ion beam intermixing 266 4.4 Further optical strength enhancement approaches 270 References 276 5 Basic reliability engineering concepts 281 Introduction 282 5.1 Descriptive reliability statistics 283 5.2 Failure distribution functions
statistical models for nonrepairable populations 288 5.3 Reliability data plotting 298 5.4 Further reliability concepts 306 5.5 Accelerated reliability testing
physics
statistics models 310 5.6 System reliability calculations 320 References 323 6 Diode laser reliability engineering program 325 Introduction 325 6.1 Reliability test plan 326 Reliability demonstration tests 336 Step stress testing 337 Laser chip 339 Laser module 341 Temperature endurance 342 Mechanical integrity 343 Special tests 344 Temperature endurance 345 Mechanical integrity 346 Special tests 346 6.2 Reliability growth program 349 6.3 Reliability benefits and costs 350 References 353 PART 3 DIODE LASER DIAGNOSTICS 355 Overview 355 7 Novel diagnostic laser data for active layer material integrity; impurity trapping effects; and mirror temperatures 361 Introduction 362 7.1 Optical integrity of laser wafer substrates 362 7.2 Integrity of laser active layers 366 7.3 Deep
level defects at interfaces of active regions 376 7.4 Micro
Raman spectroscopy for diode laser diagnostics 386 References 406 8 Novel diagnostic laser data for mirror facet disorder effects; mechanical stress effects; and facet coating instability 409 Introduction 410 8.1 Diode laser mirror facet studies by Raman 410 8.2 Local mechanical stress in ridge waveguide diode lasers 416 8.3 Diode laser mirror facet coating structural instability 424 silicon coatings 427 References 430 9 Novel diagnostic data for diverse laser temperature effects; dynamic laser degradation effects; and mirror temperature maps 433 Introduction 434 9.1 Thermoreflectance microscopy for diode laser diagnostics 435 9.2 Thermoreflectance versus optical spectroscopies 442 9.3 Lowest detectable temperature rise 444 9.4 Diode laser mirror temperatures by micro
thermoreflectance 445 9.5 Diode laser mirror studies by micro
thermoreflectance 451 9.6 Diode laser cavity temperatures by micro
electroluminescence 456 9.7 Diode laser facet temperature
two
dimensional mapping 460 References 466 Index 469