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Edited by key figures in 3D integration and written by top authors from high-tech companies and renowned research institutions, this book covers the intricate details of 3D process technology. As such, the main focus is on silicon via formation, bonding and debonding, thinning, via reveal and backside processing, both from a technological and a materials science perspective. The last part of the book is concerned with assessing and enhancing the reliability of the 3D integrated devices, which is a prerequisite for the large-scale implementation of this emerging technology. Invaluable reading…mehr

Produktbeschreibung
Edited by key figures in 3D integration and written by top authors from high-tech companies and renowned research institutions, this book covers the intricate details of 3D process technology. As such, the main focus is on silicon via formation, bonding and debonding, thinning, via reveal and backside processing, both from a technological and a materials science perspective. The last part of the book is concerned with assessing and enhancing the reliability of the 3D integrated devices, which is a prerequisite for the large-scale implementation of this emerging technology. Invaluable reading for materials scientists, semiconductor physicists, and those working in the semiconductor industry, as well as IT and electrical engineers.
  • Produktdetails
  • Verlag: Wiley VCH Verlag GmbH / Wiley-VCH
  • Artikelnr. des Verlages: 1133466 000
  • Erscheinungstermin: 4. Juni 2014
  • Englisch
  • Abmessung: 251mm x 172mm x 30mm
  • Gewicht: 1170g
  • ISBN-13: 9783527334667
  • ISBN-10: 3527334661
  • Artikelnr.: 39736224
Autorenporträt
Philip Garrou is a consultant and expert witness in the field of IC packaging materials and applications, prior to which he was Dir. of Technology and Business Dev. for Dow Chemicals' Electronic Materials business. Dr. Garrou is a Fellow of IEEE and IMAPS and served as President of the IEEE CPMT Society and IMAPS. He has co-authored 3 microelectronics texts and 100+ publications. He is Assoc. Ed. and author of the weekly blog "Insights from the Leading Edge" for Solid State Technology and has co-authored 3DIC reports for both TechSearch and Yole. Mitsumasa Koyanagi is Professor in New Industry Creation Hatchery Center (NICHe) and Director in GINTI (Global Integration Initiative) at Tohoku University, Japan. After his PhD in electrical engineering he joined the Central Research Laboratory of Hitachi where he was engaged in the research on semiconductor memories. After a three-year stay at the Xerox Palo Alto Research Center in California, USA, he became Professor in the Research Center for Integrated Systems at Hiroshima University, Japan. Mitsumasa Koyanagi received numerous awards, including the IEEE Jun-ichi Nishizawa Medal and the National Medal with Purple Ribbon in Japan. Peter Ramm is head of the department Heterogeneous System Integration of Fraunhofer EMFT in Munich, Germany, where he is responsible for the key competence "Si Processes, Device and 3D Integration". He received the physics and Dr. rer. nat. degrees from the University of Regensburg and subsequently worked for Siemens in the DRAM facility where he was responsible for the process integration. In 1988 he joined Fraunhofer IFT in Munich, focusing for more than 25 years on 3D integration technologies. Peter Ramm is coauthor of over 100 publications and 24 patents and editor of Wiley¿s "Handbook of Wafer Bonding". He received the "Ashman Award 2009" from IMAPS "For Pioneering Work on 3D IC Stacking and Integration".
Inhaltsangabe
3D IC INTEGRATION SINCE 2008 3D IC Nomenclature Process Standardization The Introduction of Interposers (2.5D) The Foundries Memory The Assembly and Test Houses 3D IC Application Roadmaps KEY APPLICATIONS AND MARKED TRENDS FOR 3D INTEGRATION AND INTERPOSER TECHNOLOGIES Introduction Advanced Packaging Importance in the Semiconductor Industry is Growing 3D Integration
Focused Activities
The Global IP Landscape Applications, Technology, and Market Trends ECONOMIC DRIVERS AND IMPEDIMENTS FOR 2.5D/3D INTEGRATION 3D Performance Advantages The Economics of Scaling The Cost of Future Scaling Cost Remains the Impediment to 2.5D and 3D Product Introduction INTERPOSER TECHNOLOGY Definition of 2.5D Interposers Interposer Drivers and Need Comparison of Interposer Materials Silicon Interposers with TSV Lower Cost Interposers Interposer Technical and Manufacturing Challenges Interposer Application Examples Conclusions TSV FORMATION OVERVIEW Introduction TSV Process Approaches TSV Fabrication Steps Yield and Reliability TSV UNIT PROCESSES AND INTEGRATION Introduction TSV Process Overview TSV Unit Processes Integration and Co
Optimization of Unit Processes in Via Formation Sequence Co
Optimization of Unit Processes in Backside Processing and Via
Reveal Flow Integration and Co
Optimization of Unit Processes in Via
Last Flow Integration with Packaging Electrical Characterization of TSVs Conclusions TSV FORMATION AT ASET Introduction Via
Last TSV for Both D2D and W2W Processes in ASET TSV Process for D2D TSV Process for W2W Conclusions LASER
ASSISTED WAFER PROCESSING: NEW PERSPECTIVES IN THROUGH
SUBSTRATE VIA DRILLING AND REDISTRIBUTION LAYER DEPOSITION Introduction Laser Drilling of TSVs Direct
Write Deposition of Redistribution Layers Conclusions and Outlook TEMPORARY BONDING MATERIAL REQUIREMENTS Introduction Technology Options Requirements of a Temporary Bonding Material Considerations for Successful Processing Surviving the Backside Process Debonding TEMPORARY BONDING AND DEBONDING
AN UPDATE ON MATERIALS AND METHODS Introduction Carrier Selection for Temporary Bonding Selection of Temporary Bonding Adhesives Bonding and Debonding Processes Equipment and Process Integration ZONEBOND®: RECENT DEVELOPMENTS IN TEMPORARY BONDING AND ROOM
TEMPERATURE DEBONDING Introduction Thin Wafer Processing ZoneBOND Room
Temperature Debonding Conclusions TEMPORARY BONDING AND DEBONDING AT TOK Introduction Zero Newton Technology Conclusions THE 3M (TM) WAFER SUPPORT SYSTEM (WSS) Introduction System Description General Advantages High
Temperature Material Solutions Process Considerations Future Directions Summary COMPARISON OF TEMPORARY BONDING AND DEBONDING PROCESS FLOWS Introduction Studies of Wafer Bonding and Thinning Backside Processing Debonding and Cleaning THINNING, VIA REVEAL, AND BACKSIDE PROCESSING
OVERVIEW Introduction Wafer Edge Trimming Thin Wafer Support Systems Wafer Thinning Thin Wafer Backside Processing BACKSIDE THINNING AND STRESS
RELIEF TECHNIQUES FOR THIN SILICON WAFERS Introduction Thin Semiconductor Devices Wafer Thinning Techniques Fracture Tests for Thin Silicon Wafers Comparison of Stress
Relief Techniques for Wafer Backside Thinning Process Flow for Wafer Thinning and Dicing Summary and Outlook on 3D Integration VIA REVEAL AND BACKSIDE PROCESSING Introduction Via Reveal and Backside Processing in Via
Middle Process Backside Processing in Back
Via Process Backside Processing and Impurity Gettering Backside Processing for RDL Formation DICING, GRINDING, AND POLISHING (KIRU KEZURU AND MIGAKU) Introduction Grinding and Polishing Dicing Summary OVERVIEW OF BONDING AND ASSEMBLY FOR 3D INTEGRATION Introduction Direct, Indirect, and Hybrid Bonding Requirements for Bonding Process and Materials Bonding Quality Characterization Discussion of Specific Bonding and Assembly Technologies Summary and Conclusions BONDING AND ASSEMBLY AT TSMC Introduction Process Flow Chip
on
Wafer Stacking CoW
on
Substrate (CoWoS) Stacking CoWoS Versus CoCoS Testing and Known Good Stacks (KGS) Future Perspectives TSV PACKAGING DEVELOPMENT AT STATS ChipPAC Introduction Development of the 3DTSV Solution for Mobile Platforms Alternative Approaches and Future Developments CU
SIO2 HYBRID BONDING Introduction Blanket Cu
SiO2 Direct Bonding Principle Chemical
Mechanical Polishing Parameters Aligned Bonding Blanket Metal Direct Bonding Principle Electrical Characterization Conclusions BUMP INTERCONNECT FOR 2:5D AND 3D INTEGRATION History C4 Solder Bumps Copper Pillar Bumps Cu Bumps Electromigration SELF
ASSEMBLY BASED 3D AND HETEROINTEGRATION Introduction Self
Assembly Process Key Parameters of Self
Assembly on Alignment Accuracies How to Interconnect Self
Assembled Chips to Chips or Wafers Flip
Chip
to
Wafer 3D Integration Reconfigured
Wafer
to
Wafer 3D Integration HIGH
ACCURACY SELF
ALIGNMENT OF THIN SILICON DIES ON PLASMA
PROGRAMMED SURFACES Introduction Principle of Fluidic Self
Alignment Process for Thin Dies Plasma Programming of the Surface Preparation of Materials for Self
Alignment Experiments Self
Alignment Experiments Results of Self
Alignment Experiments Discussion Conclusions CHALLENGES IN 3D FABRICATION Introduction High
Volume Manufacturing for 3D Integration Technology Challenges Front
Side and Backside Wafer Processes Bonding and Underfills Multitier Stacking Wafer Thinning and Thin Die and Wafer Handling Strata Packaging and Assembly Yield Management Reliability Cost Management Future Perspectives CU TSV STRESS: AVOIDING CU PROTRUSION AND IMPACT ON DEVICES Introduction Cu Stress in TSV Mitigation of Cu Pumping Impact of TSVs on FEOL Devices IMPLICATIONS OF STRESS/STRAIN AND METAL CONTAMINATION ON THINNED DIE Introduction Impacts of Cu Contamination on Device Reliabilities in Thinned 3DLSI Impacts of Local Stress and Strain on Device Reliabilities in Thinned 3DLSI METROLOGY NEEDS FOR 2.5D/3D INTERCONNECTS Introduction: 2.5D and 3D Reference Flows TSV Formation MEOL Metrology Assembly and Packaging Metrology Summary Index