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This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.
This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.
Rolf Brendel studied Physics and Mathematics in Freiburg, Brighton (UK), and Heidelberg. After his Ph.D. in materials science at the University Erlangen-Nuremberg he worked for five years with the Max Planck Institute for Solid State Research in Stuttgart. He is the head of the division for Thermosensorics and Photovoltaics at the Bavarian Center for Applied Energy Research (ZAE Bayern) and teaches Physics at the University of Erlangen-Nuremberg.
Inhaltsangabe
INTRODUCTION PHYSICAL LOSS MECHANISMS Limitations to photogeneration Limitations to radiative recombination Limitations by non-radiative recombination ADVANCED QUANTUM EFFICIENCY ANALYSIS Definition of effective diffusion lengths Reciprocity theorem for charge carrier collection Applications of the generalized reciprocity theorem Limiting recombination parameters derived from LQ Analytical quantum efficiency model for thin films Differential and actual recombination parameters TECHNOLOCIAL APPROACH TO THIN-FILM CELLS High-temperature substrate (HTS) approach Low-temperature substrate (LTS) approach Layer-transfer process (LTP) approach WAFFLE CELLS FROM THE POROUS SI (PSI) PROCESS Expitaxy on porous Si Module concepts Optical absorption in Si waffles Efficiency potential SUMMARY AND CONCLUSIONS Physical limitations to power conversion Revealing the limitations of experimental cells Limitations of current thin-film approaches Overcoming technological limitations with the porous Si (PSI) process Updating Remark APPENDICES Light trapping Recombination Quantum efficiency
INTRODUCTION PHYSICAL LOSS MECHANISMS Limitations to photogeneration Limitations to radiative recombination Limitations by non-radiative recombination ADVANCED QUANTUM EFFICIENCY ANALYSIS Definition of effective diffusion lengths Reciprocity theorem for charge carrier collection Applications of the generalized reciprocity theorem Limiting recombination parameters derived from LQ Analytical quantum efficiency model for thin films Differential and actual recombination parameters TECHNOLOCIAL APPROACH TO THIN-FILM CELLS High-temperature substrate (HTS) approach Low-temperature substrate (LTS) approach Layer-transfer process (LTP) approach WAFFLE CELLS FROM THE POROUS SI (PSI) PROCESS Expitaxy on porous Si Module concepts Optical absorption in Si waffles Efficiency potential SUMMARY AND CONCLUSIONS Physical limitations to power conversion Revealing the limitations of experimental cells Limitations of current thin-film approaches Overcoming technological limitations with the porous Si (PSI) process Updating Remark APPENDICES Light trapping Recombination Quantum efficiency
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