Merkzettel Warenkorb
Produktbild: Advanced Ultra Low-Power Semiconductor Devices

Advanced Ultra Low-Power Semiconductor Devices Design and Applications

201,99 €

inkl. gesetzl. MwSt., Versandkostenfrei

Lieferung nach Hause

Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

22.11.2023

Herausgeber

Shubham Tayal + weitere

Verlag

Wiley

Seitenzahl

320

Maße (L/B/H)

23,3/15,9/2,3 cm

Gewicht

590 g

Sprache

Englisch

ISBN

978-1-394-16641-1

Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

22.11.2023

Herausgeber

Verlag

Wiley

Seitenzahl

320

Maße (L/B/H)

23,3/15,9/2,3 cm

Gewicht

590 g

Sprache

Englisch

ISBN

978-1-394-16641-1

Herstelleradresse

Libri GmbH
Europaallee 1
36244 Bad Hersfeld
DE

Email: gpsr@libri.de

Noch keine Bewertungen vorhanden

Verfassen Sie die erste Bewertung zu diesem Artikel

Helfen Sie anderen Kundinnen und Kunden durch Ihre Meinung.

Kundinnen und Kunden meinen

Bewertungen (0)
Die Leseprobe wird geladen.
  • Produktbild: Advanced Ultra Low-Power Semiconductor Devices

  • Preface xi

    1 Subthreshold Transistors: Concept and Technology 1
    Ball Mukund Mani Tripathi

    1.1 Introduction 2

    1.2 Major Sources of Leakage and Possible Methods of Prevention 2

    1.3 Possibilities and Challenges 12

    1.4 Conclusions 21

    2 Introduction to Conventional MOSFET and Advanced Transistor TFET 29
    M. Saravanan, K. Ramkumar, Eswaran Parthasarathy, J. Ajayan and S. Sreejith

    2.1 Introduction 30

    2.2 Device Structure 30

    2.3 TFET Principle of Operation 31

    2.4 Material Characterization 33

    2.5 Characteristics of TFET 35

    2.6 Comparison of OFF-State Characteristics 37

    2.7 Phonon Scattering's Impact 39

    2.8 ON-State Performance Comparison 40

    2.9 Performance Analysis Based on Intrinsic Delay 40

    2.10 Bandgap's Effect on Device Performance 41

    2.11 MOSFET and TFET Scaling Behaviour 43

    2.12 Surface Potential of an N-TFET and N-MOSFET 45

    2.13 Professional Advantages of TFET over MOSFET 46

    2.14 Conclusion 46

    3 Operation Principle and Fabrication of TFET 51
    Mekonnen Getnet Yirak and Rishu Chaujar

    3.1 Introduction 52

    3.2 Planar MOSFET's Limitations 54

    3.3 Demand for Low Power Operation 55

    3.4 TFET: Operation Principle of TFET 56

    3.5 TFET: Recent Design Issues in TFET 63

    3.6 TFET: Modeling and Application 65

    3.7 TFET: Fabrication Perspective 68

    3.8 TFET: Applications and Future of Low-Power Electronics 70

    3.9 Expected Challenges in Replacing MOSFET with TFET 70

    3.10 Conclusion 71

    4 Mathematical Modeling of TFET and Its Future Applications: Ultra Low-Power SRAM Circuit and III-IV TFET 77
    Nayana G H and P. Vimala

    4.1 Introduction 78

    4.2 Modeling Approaches 78

    4.3 Structure 81

    4.4 Applications of Tunnel Field-Effect Transistor 83

    4.5 Road Ahead for Tunnel Field Effect Transistors 87

    5 Analysis of Channel Doping Variation on Transfer Characteristics to High Frequency Performance of F-TFET 91
    Prabhat Singh and Dharmendra Singh Yadav

    5.1 Introduction 92

    5.2 Simulated Device Structure and Parameters 93

    5.3 DC Characteristics 93

    5.4 Analysis of Analog/RF FOMs 98

    5.5 Conclusion 101

    6 Comparative Study of Gate Engineered TFETs and Optimization of Ferroelectric Heterogate TFET Structure 105
    Susmitha Kothapalli, Zohmingliana and Brinda Bhowmick

    6.1 Introduction 106

    6.2 Study of Different TFET Structures 106

    6.3 Proposed Structure 109

    6.4 Results and Discussion 110

    6.5 Conclusion 127

    6.6 Future Scope 128

    7 State of the Art Tunnel FETs for Low Power Memory Applications 131
    Arun A. V., Sreelekshmi P. S. and Jobymol Jacob

    7.1 Static Random Access Memory 131

    7.2 Performance Parameters of SRAM Cell 134

    7.3 TFET-Based SRAM Cell Design 135

    7.4 Conclusion 159

    8 Epitaxial Layer-Based Si/SiGe Hetero-Junction Line Tunnel FETs: A Physical Insight 165
    Abhishek Acharya, Sourabh Panwar, Shobhit Srivastava and Shashidhara M.

    8.1 Fundamental Limitation of CMOS: Tunnel FETs 165

    8.2 Working Principle of Tunnel FET 168

    8.3 Point and Line TFETs: Tunneling Direction 169

    8.4 Perspective of Line TFETs 170

    8.5 Analytical Models of Line TFETs 176

    8.6 Line TFETs for Analog & Digital Circuits Design 178

    8.7 Other Steep Slope Devices 179

    8.8 Conclusion 181

    9 Investigation of Thermal Performance on Conventional and Junctionless Nanosheet Field Effect Transistors 187
    Sresta Valasa, Shubham Tayal and Laxman Raju Thoutam

    9.1 Introduction 188

    9.2 Device Simulation Details 190

    9.3 Results and Discussion 192

    9.4 Conclusion 201

    10 Introduction to Newly Adopted NCFET and Ferroelectrics for Low-Power Application 207
    Shelja Kaushal

    10.1 Introduction 208

    10.2 NCFET and Its Design Constraints 209

    10.3 NCFET for Low-Power Applications 216

    10.4 Summary 226

    11 Application of Ferroelectrics: Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses 235
    Sourav De, Maximilian Lederer, Yannick Raffel, David Lehninger, Sunanda Thunder, Michael P.M. Jank, Tarek Ali and Thomas Kämpfe

    11.1 Introduction 236

    11.2 Ferroelectricity in Hafnium Oxide 241x Contents

    11.3 IGZO Based Ferroelectric Thin Film Transistor 245

    11.4 Applications in Neural Networks 249

    11.5 Conclusion 250

    12 Radiation Effects and Their Impact on SRAM Design: A Comprehensive Survey with Contemporary Challenges 261
    Y. Alekhya, Umakanta Nanda and Chandan Kumar Pandey

    12.1 Introduction 261

    12.2 Literature Survey 263

    12.3 Impact of Radiation Effects on Sram Cells 266

    12.4 Results and Discussion 267

    12.5 Conclusion 274

    13 Final Summary and Future of Advanced Ultra Low Power Metal Oxide Semiconductor Field Effect Transistors 279
    Young Suh Song, Shiromani Balmukund Rahi, Shahnaz Kossar, Abhishek Kumar Upadhyay, Shubham Tayal, Chandan Kumar Pandey and Biswajit Jena

    13.1 Introduction 280

    13.2 Challenges in Future Ultra-Low Power Semiconductors 282

    13.3 Conclusion 286

    References 288

    Index 293