Produktbild: Physical and Technical Problems of SOI Structures and Devices
Band 4

Physical and Technical Problems of SOI Structures and Devices

48,99 €

inkl. gesetzl. MwSt., Versandkostenfrei


Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

21.10.2012

Abbildungen

X, 290 p.

Herausgeber

J.-P. Colinge + weitere

Verlag

Springer Netherland

Seitenzahl

290

Maße (L/B/H)

24/16/1,7 cm

Gewicht

489 g

Auflage

Softcover reprint of the original 1st ed. 1995

Sprache

Englisch

ISBN

978-94-010-4052-5

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

21.10.2012

Abbildungen

X, 290 p.

Herausgeber

Verlag

Springer Netherland

Seitenzahl

290

Maße (L/B/H)

24/16/1,7 cm

Gewicht

489 g

Auflage

Softcover reprint of the original 1st ed. 1995

Sprache

Englisch

ISBN

978-94-010-4052-5

Herstelleradresse

Springer-Verlag KG
Sachsenplatz 4-6
1201 Wien
AT

Email: GPSR Kontakt

Noch keine Bewertungen vorhanden

Verfassen Sie die erste Bewertung zu diesem Artikel

Helfen Sie anderen Kundinnen und Kunden durch Ihre Meinung.

Kundinnen und Kunden meinen

Bewertungen (0)

  • Produktbild: Physical and Technical Problems of SOI Structures and Devices
  • Soi Materials.- Low Dose SIMOX for ULSI Applications.- Why Porous Silicon for SOI?.- Defect Engineering in SOI Films Prepared by Zone-Melting Recrystallization.- Ion Beam Processing for Silicon-on-Insulator.- Semi-Insulating Oxygen-Doped Silicon by Low Temperature Chemical Vapor Deposition for SOI Applications.- Direct Formation of Thin Film Nitride Structures by High Intensity Ion Implantation of Nitrogen into Silicon.- Stimulated Technology for Implanted SOI Formation.- Behaviour of Oxygen and Nitrogen Atoms Sequentially Implanted into Silicon.- SOI Fabrication by Silicon Wafer Bonding with the Help of Glass-Layer Fusion.- Crystallization of a-Si Films on Glasses by Multipulse-Excimer-Laser Technique.- Microzone Laser Recrystallized Polysilicon Layers on Insulator.- Soi Materials Characterization Techniques.- Electrical Characterization Techniques for Silicon on Insulator Materials and Devices.- The Defect Structure of Buried Oxide Layers in SIMOX and BESOI Structures.- IR Study of Buried Layer Structure on Different Stages of Technology.- Optical Investigation of Silicon Implanted with High Doses of Oxygen and Hydrogen Ions.- Electrical Properties of ZMR SOI Structures: Characterization Techniques and Experimental Results.- Soi Devices.- Fabrication and Characterisation of Poly-Si TFTs on Glass.- Hot Carrier Reliability of SOI Structures.- Novel TESC Bipolar Transistor Approach for a Thin-Film Silicon-on-Insulator Substrate.- Problems of Radiation Hardness of SOI Structures and Devices.- Fabrication of SIMOX Structures and IC’s Test Elements.- Low-Frequency Noise Characterization of Silicon-on-Insulator Depletion-mode p-MOSFETS.- Soi Circuits.- SOI Devices and Circuits: An Overview of Potentials and Problems.- 1.2 µm CMOS/SOI on Porous Silicon.- SOI PressureSensors Based on Laser Recrystallized Polysilicon.