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  • Produktbild: Materials Modification by High-fluence Ion Beams
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Band 155

Materials Modification by High-fluence Ion Beams

Aus der Reihe NATO Science Series E:

48,99 €

inkl. gesetzl. MwSt., Versandkostenfrei

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

26.09.2011

Abbildungen

606 p.

Herausgeber

Roger Kelly + weitere

Verlag

Springer Netherland

Seitenzahl

606

Maße (L/B/H)

24,4/17/3,3 cm

Gewicht

1047 g

Auflage

1989

Sprache

Englisch

ISBN

978-94-010-7063-8

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

26.09.2011

Abbildungen

606 p.

Herausgeber

Verlag

Springer Netherland

Seitenzahl

606

Maße (L/B/H)

24,4/17/3,3 cm

Gewicht

1047 g

Auflage

1989

Sprache

Englisch

ISBN

978-94-010-7063-8

Herstelleradresse

Springer-Verlag GmbH
Tiergartenstr. 17
69121 Heidelberg
DE

Email: ProductSafety@springernature.com

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  • Produktbild: Materials Modification by High-fluence Ion Beams
  • Produktbild: Materials Modification by High-fluence Ion Beams
  • Overview.- High-fluence ion irradiation: an overview.- Sputtering.- Historical overview on the fundamentals of sputtering.- Depth of origin of sputtered atoms.- Magnetron sputtering: physics and design.- On the formation and characterization of microcrystalline Si:H prepared by RF magnetron sputtering.- Depth profiling of Ta2O5 thin layer on Ta foil by ion scattering spectrometry and ion sputtering.- Bombardment of alkali and alkali-earth halides by ions and electrons.- Effects of Ar+ angle-of-incidence on the etching of Si with Cl2 and low-energy Ar+ ions.- Irradiation effects in ices by energetic ions.- Ion formation by very high energetic ion impact on solids.- Simulation.- Computer simulation of stopping and sputtering.- Computer simulation of ion-beam mixing of cobalt on silicon.- On the fractal nature of collision cascades.- Simple statistical models for erosion and growth.- Defects and Disorder.- Defects and defect processes.- Fast-ion-induced defects in silicon studied by deep level transient spectroscopy.- Low-energy (300 eV — 10 keV) Ar+ and Cl+ ion irradiation of (100) Si.- The charge state of iron implanted into sapphire.- Implantation and Mixing.- Direct and recoil implantation, and collisional ion-beam mixing: recent low-temperature experiments.- Mixing by defect-assisted migration of thin markers in solids.- The TRIUMF optically pumped polarized H- ion source.- Some high-current ion sources for materials modification.- Compositional and Chemical Changes.- Bombardment-induced compositional change with alloys, oxides, and oxysalts. I The role of the surface binding energy.- Investigation of preferential sputtering mechanisms by analysing the sample surface and near-surface region with AES and ISS.- High-fluence implantation in insulators. Part I:Compositional, mechanical, and optical changes.- High-fluence implantation in insulators. Part II: Chemical changes.- Electrochemical and corrosion behaviour of ion and laser-beam modified metal surfaces.- Structural Changes.- Ion-irradiation induced phase changes in metallic systems.- The topography of ion-bombarded surfaces.- Cultured blisters.- Electronic Changes.- Electronic properties of ion-implanted metals.- Mechanical Changes.- Tribology of implantation bilayers.- Adhesive and abrasive wear study of nitrogen implanted steels.- Effect of ?-recoil damage on the elastic moduli of zircon and tourmaline.- Depth-resolved investigation of structural transformations and hardness variations in implanted films on bulk samples.- Laser Processing.- Laser etching as an alternative.- Pulsed laser irradiation of heavily Ge implanted silicon.