Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials
225,99 €
inkl. gesetzl. MwSt.Beschreibung
Produktdetails
Format
Kopierschutz
Ja
Family Sharing
Nein
Text-to-Speech
Nein
Erscheinungsdatum
20.08.2007
Herausgeber
Peter Capper + weitereVerlag
WileySeitenzahl
464 (Printausgabe)
Dateigröße
5066 KB
Auflage
1. Auflage
Sprache
Englisch
EAN
9780470319499
Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth
of crystals, typically in semiconductor manufacturing, whereby the
crystal is grown from a rich solution of the semiconductor onto a
substrate in layers, each of which is formed by supersaturation or
cooling. At least 50% of growth in the optoelectronics area is
currently focussed on LPE.
This book covers the bulk growth of semiconductors, i.e.
silicon, gallium arsenide, cadmium mercury telluride, indium
phosphide, indium antimonide, gallium nitride, cadmium zinc
telluride, a range of wide-bandgap II-VI compounds, diamond and
silicon carbide, and a wide range of oxides/fluorides (including
sapphire and quartz) that are used in many industrial applications.
A separate chapter is devoted to the fascinating field of growth in
various forms of microgravity, an activity that is approximately
30-years old and which has revealed many interesting features, some
of which have been very surprising to experimenters and
theoreticians alike.
* Covers the most important materials within the field
* The contributors come from a wide variety of countries and
include both academics and industrialists, to give a balanced
treatment
* Builds-on an established series known in the community
* Highly pertinent to current and future developments in
telecommunications and computer-processing industries.
of crystals, typically in semiconductor manufacturing, whereby the
crystal is grown from a rich solution of the semiconductor onto a
substrate in layers, each of which is formed by supersaturation or
cooling. At least 50% of growth in the optoelectronics area is
currently focussed on LPE.
This book covers the bulk growth of semiconductors, i.e.
silicon, gallium arsenide, cadmium mercury telluride, indium
phosphide, indium antimonide, gallium nitride, cadmium zinc
telluride, a range of wide-bandgap II-VI compounds, diamond and
silicon carbide, and a wide range of oxides/fluorides (including
sapphire and quartz) that are used in many industrial applications.
A separate chapter is devoted to the fascinating field of growth in
various forms of microgravity, an activity that is approximately
30-years old and which has revealed many interesting features, some
of which have been very surprising to experimenters and
theoreticians alike.
* Covers the most important materials within the field
* The contributors come from a wide variety of countries and
include both academics and industrialists, to give a balanced
treatment
* Builds-on an established series known in the community
* Highly pertinent to current and future developments in
telecommunications and computer-processing industries.
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