Charge-Based MOS Transistor Modeling The EKV Model for Low-Power and RF IC Design
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Produktdetails
Format
Kopierschutz
Ja
Family Sharing
Nein
Text-to-Speech
Nein
Erscheinungsdatum
14.08.2006
Verlag
WileySeitenzahl
328 (Printausgabe)
Dateigröße
7181 KB
Auflage
1. Auflage
Sprache
Englisch
EAN
9780470855454
Modern, large-scale analog integrated circuits (ICs) are
essentially composed of metal-oxide semiconductor (MOS) transistors
and their interconnections. As technology scales down to deep
sub-micron dimensions and supply voltage decreases to reduce power
consumption, these complex analog circuits are even more dependent
on the exact behavior of each transistor. High-performance analog
circuit design requires a very detailed model of the transistor,
describing accurately its static and dynamic behaviors, its noise
and matching limitations and its temperature variations. The
charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for
IC design has been developed to provide a clear understanding of
the device properties, without the use of complicated equations.
All the static, dynamic, noise, non-quasi-static models are
completely described in terms of the inversion charge at the source
and at the drain taking advantage of the symmetry of the device.
Thanks to its hierarchical structure, the model offers several
coherent description levels, from basic hand calculation equations
to complete computer simulation model. It is also compact, with a
minimum number of process-dependant device parameters.
Written by its developers, this book provides a comprehensive
treatment of the EKV charge-based model of the MOS transistor for
the design and simulation of low-power analog and RF ICs. Clearly
split into three parts, the authors systematically examine:
* the basic long-channel intrinsic charge-based model, including
all the fundamental aspects of the EKV MOST model such as the basic
large-signal static model, the noise model, and a discussion of
temperature effects and matching properties;
* the extended charge-based model, presenting important
information for understanding the operation of deep-submicron
devices;
* the high-frequency model, setting out a complete MOS transistor
model required for designing RF CMOS integrated circuits.
Practising engineers and circuit designers in the semiconductor
device and electronics systems industry will find this book a
valuable guide to the modelling of MOS transistors for integrated
circuits. It is also a useful reference for advanced students in
electrical and computer engineering.
essentially composed of metal-oxide semiconductor (MOS) transistors
and their interconnections. As technology scales down to deep
sub-micron dimensions and supply voltage decreases to reduce power
consumption, these complex analog circuits are even more dependent
on the exact behavior of each transistor. High-performance analog
circuit design requires a very detailed model of the transistor,
describing accurately its static and dynamic behaviors, its noise
and matching limitations and its temperature variations. The
charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for
IC design has been developed to provide a clear understanding of
the device properties, without the use of complicated equations.
All the static, dynamic, noise, non-quasi-static models are
completely described in terms of the inversion charge at the source
and at the drain taking advantage of the symmetry of the device.
Thanks to its hierarchical structure, the model offers several
coherent description levels, from basic hand calculation equations
to complete computer simulation model. It is also compact, with a
minimum number of process-dependant device parameters.
Written by its developers, this book provides a comprehensive
treatment of the EKV charge-based model of the MOS transistor for
the design and simulation of low-power analog and RF ICs. Clearly
split into three parts, the authors systematically examine:
* the basic long-channel intrinsic charge-based model, including
all the fundamental aspects of the EKV MOST model such as the basic
large-signal static model, the noise model, and a discussion of
temperature effects and matching properties;
* the extended charge-based model, presenting important
information for understanding the operation of deep-submicron
devices;
* the high-frequency model, setting out a complete MOS transistor
model required for designing RF CMOS integrated circuits.
Practising engineers and circuit designers in the semiconductor
device and electronics systems industry will find this book a
valuable guide to the modelling of MOS transistors for integrated
circuits. It is also a useful reference for advanced students in
electrical and computer engineering.
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