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Distortion Analysis of Analog Integrated Circuits

Aus der Reihe The Springer International Series in Engineering and Computer Science
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Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

05.01.2011

Verlag

Springer Us

Seitenzahl

501

Maße (L/B/H)

23,5/15,5/2,9 cm

Gewicht

814 g

Auflage

Softcover reprint of the original 1st ed. 1998

Sprache

Englisch

ISBN

978-1-4419-5044-4

Beschreibung

Produktdetails

Einband

Taschenbuch

Erscheinungsdatum

05.01.2011

Verlag

Springer Us

Seitenzahl

501

Maße (L/B/H)

23,5/15,5/2,9 cm

Gewicht

814 g

Auflage

Softcover reprint of the original 1st ed. 1998

Sprache

Englisch

ISBN

978-1-4419-5044-4

Herstelleradresse

Springer-Verlag KG
Sachsenplatz 4-6
1201 Wien
AT

Email: GPSR Kontakt

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  • Produktbild: Distortion Analysis of Analog Integrated Circuits
  • Produktbild: Distortion Analysis of Analog Integrated Circuits
  • 1 Introduction.- 2 Basic terminology.- 3 Description of nonlinearities in analog integrated circuits.- 4 Volterra series and their applications to analog integrated circuit design.- 5 Calculation of harmonics and intermodulation products.- 6 Silicon bipolar transistor models for distortion analysis.- 7 MOS transistor models for distortion analysis.- 8 Weakly nonlinear behavior of basic analog building blocks.- 9 Measurements of basic nonlinearities of transistors.- Appendices.- A Useful trigonometric relationships.- B Basics of Volterra series.- B.1 Introduction.- B.2 Volterra series representation of a system.- B.3 Second-order Volterra systems.- B.3.1 The second-order operator.- B.3.2 The second-order Volterra operator.- B.3.3 Second-order kernel symmetrization.- B.4 The second-order kernel transform.- B.4.1 The two-dimensional Fourier and Laplace transform.- B.4.2 Sinusoidal response of a second-order Volterra system.- B.4.3 Response of a second-order system to a sum of two sinusoids.- B.5 Higher-order Volterra systems.- B.5.4 The p-dimensional Laplace and Fourier transforms.- C Derivation of the method for the direct computation of nonlinear responses.- C.1 Setup of basic equations.- C.2 First-order responses.- C.3 Second-order responses.- C.4 Higher-order responses.- D Nonlinearity coefficients for the description of the Early effect.- E Relation between source-referred and bulk-referred nonlinearity coefficients of a MOS transistor.- F Derivatives of the drain current with an implicit saturation voltage.- F.2 First-order derivatives.- F.3 Higher-order derivatives.- G Derivation of the MOS drain current in the presence of velocity saturation.- G.1 Derivation of the drain current with the simple velocity-field models.- G.2 Derivation of the drain current with the more accurate velocity-field model.- G.2.1 The rigorous approach.- G.2.2 Approximate approach.