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Produktbild: Crystal Growth Technology
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Crystal Growth Technology Semiconductors and Dielectrics

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Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

25.08.2010

Abbildungen

schwarz-weiss Illustrationen, farbige Illustrationen, Tabellen, schwarz-weiss

Herausgeber

Peter Capper + weitere

Verlag

Wiley-VCH

Seitenzahl

366

Maße (L/B/H)

24,8/18/2,8 cm

Gewicht

932 g

Auflage

1. Auflage

Sprache

Englisch

ISBN

978-3-527-32593-1

Beschreibung

Rezension

"Edited by the organizers of the International Workshop on Crystal Growth Technology, this ready reference is essential reading for materials scientists, chemists, physicists, computer hardware manufacturers, engineers, and those working in the chemical and semiconductor industries." (Quote.com, 31 January 2011)

"Semiconductors and dielectrics are two essential materials found in cell phones and computers, for example, and both are manufactured by growing crystals." (Quote.com, 20 January 2011)

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

25.08.2010

Abbildungen

schwarz-weiss Illustrationen, farbige Illustrationen, Tabellen, schwarz-weiss

Herausgeber

Verlag

Wiley-VCH

Seitenzahl

366

Maße (L/B/H)

24,8/18/2,8 cm

Gewicht

932 g

Auflage

1. Auflage

Sprache

Englisch

ISBN

978-3-527-32593-1

Herstelleradresse

Wiley-VCH GmbH
Boschstrasse 12|69469|Weinheim|DE
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  • Produktbild: Crystal Growth Technology
  • Preface

    PART I: Basic Concepts in Crystal Growth Technology

    THERMODYNAMIC MODELING OF CRYSTAL-GROWTH PROCESSES
    Introduction
    General Approach of Thermodynamic Modeling
    Crystal Growth in the System Si-C-O-Ar (Example 1)
    Crystal Growth of Carbon-Doped GaAs (Example 2)
    Summary and Conclusions
    MODELING OF VAPOR-PHASE GROWTH OF SiC AND AlN BULK CRYSTALS
    Introduction
    Model Description
    Results and Discussions
    Conclusions
    ADVANCED TECHNOLOGIES OF CRYSTAL GROWTH FROM MELT USING VIBRATIONAL INFLUENCE
    Introduction
    Axial Vibrational Control in Crystal Growth
    AVC-Assisted Czochralski Method
    AVC-Assisted Bridgman Method
    AVC-Assisted Floating Zone Method
    Conclusions

    PART II: Semiconductors

    NUMERICAL ANALYSIS OF SELECTED PROCESSES IN DIRECTIONAL SOLIDIFICATION OF SILICON FOR PHOTOVOLTAICS
    Introduction
    Directional Solidification Method
    Crystallization Process
    Impurity Incorporation in Crystals
    Summary
    CHARACTERIZATION AND CONTROL OF DEFECTS IN VCz GaAs CRYSTALS GROWN WITHOUT B2O3 ENCAPSULANT
    Introduction
    Retrospection
    Crystal Growth Without B2O3 Encapsulant
    Inclusions, Precipitates and Dislocations
    Residual Impurities and Special Defect Studies
    Electrical and Optical Properties in SI GaAs
    Boron in SC GaAs
    Outlook on TMF-VCz
    Conclusions
    THE GROWTH OF SEMICONDUCTOR CRYSTALS (Ge, GaAs) BY THE COMBINED HEATER MAGNET TECHNOLOGY
    Introduction
    Selected Fundamentsals
    TMF Generation in Heater-Magnet Modules
    The HMM Design
    Numerical Measurements
    Growth Results under TMF
    Conclusions and Outlook
    MANUFACTURING OF BULK AlN SUBSTRATES
    Introduction
    Modeling
    Experiment
    Results and Discussion
    Conclusions
    INTERACTIONS OF DISLOCATIONS DURING EPITAXIAL GROWTH OF SiC AND GaN
    Introduction
    Classification, Nomenclature and Characterization of Dislocations in SiC and GaN
    Conversion of Basal Plane Dislocations During SiC Epitaxy
    Reduction of Dislocations During Homoepitaxy of GaN
    Conclusions
    LOW-TEMPERATURE GROWTH OF TERNARY III-V SEMICONDUCTOR CRYSTALS FROM ANTIMONIDE-BASED QUATERNARY MELTS
    Introduction
    Crystal Growth from Quaternary Melts
    Synthesis and Bulk Crystal Growth
    Conclusion
    MERCURY CADMIUM TELLURIDE (MCT) GROWTH TECHNOLOGY USING ACRT AND LPE
    Introduction
    Bridgman/ACRT Growth of MCT
    Liquid Phase Epitaxy of MCT
    THE USE OF A PLATINUM TUBE AS AN AMPOULE SUPPORT IN THE BRIDGMAN GROWTH OF BULK CZT CRYSTALS
    Introduction
    The Importance of the Solid/Liquid Interface
    Approaches for Crystal Growth Using Ampoule Support
    Results and Discussions
    Conclusions

    PART III: Dielectrics

    MODELING AND OPTIMIZATION OF OXIDE CRYSTAL GROWTH
    Introduction
    Radiative Heat Transfer (RHT)
    Numerical Model
    Results and Discussion
    Conclusions
    ADVANCED MATERIAL DEVELOPMENT FOR INERTIAL FUSION ENERGY (IFE)
    Introduction
    Production of Nd:Phosphate Laser Glass and KDP Frequency-Conversion Crystals
    Yb:S-FAP Crystals
    YCOB Crystals
    Advanced Material Concepts for Power-Plant Designs
    Summary
    MAGNETO-OPTIC GARNET SENSOR FILMS: PREPARATION, CHARACTERIZATION, APPLICATION
    Introduction
    Bi-Substituted Garnets
    LPE Deposition and Topological Film Properties
    Applications
    Conclusions
    GROWTH TECHNOLOGY AND LASER PROPERTIES OF Yb-DOPED SESQUIOXIDES
    Introduction
    Structure and Physical Properties
    Crystal Growth
    Spectroscopic Characterization
    Laser Experiments
    Summary and Outlook
    CONTINUOUS GROWTH OF ALKALI-HALIDES: PHYSICS AND TECHNOLOGY
    Modern Requirements to Large Alkali-Halide Crystals
    Conditions of Steady-State Crystallization in Conventional Melt-Growth Methods and in Their Modifications
    Macrodefect Formation in AHC
    Dynamics of Thermal Conditions during Continuous Growth
    Advanced Growth-Control Algorithms
    Summary
    TRENDS IN SCINTILLATION CRYSTALS
    Introduction
    Novel Scintillation Materials
    Scintillation Detectors for Image Visualization and Growth Techniques for Scintillation Crystals
    High Spatial Resolution Scintillation Detectors
    Conclusions

    PART IV: Crystal Machining

    CRYSTAL MACHINING USING ATMOSPHERIC PRESSURE PLASMA
    Introduction
    Plasma Chemical Vaporization Machining (PCVM)
    Numerically Controlled Sacrificial Oxidation
    Conclusions