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Produktbild: Plasma-Surface Interactions and Processing of Materials
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Plasma-Surface Interactions and Processing of Materials

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Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

31.01.1990

Herausgeber

O. Auciello + weitere

Verlag

Springer Netherland

Seitenzahl

558

Maße (L/B/H)

24,1/16/3,6 cm

Gewicht

980 g

Auflage

1990

Sprache

Englisch

ISBN

978-0-7923-0584-2

Beschreibung

Produktdetails

Einband

Gebundene Ausgabe

Erscheinungsdatum

31.01.1990

Herausgeber

Verlag

Springer Netherland

Seitenzahl

558

Maße (L/B/H)

24,1/16/3,6 cm

Gewicht

980 g

Auflage

1990

Sprache

Englisch

ISBN

978-0-7923-0584-2

Herstelleradresse

Springer-Verlag KG
Sachsenplatz 4-6
1201 Wien
AT

Email: GPSR Kontakt

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  • Produktbild: Plasma-Surface Interactions and Processing of Materials
  • Basic Physics of Plasmas/Discharges: Production of Active Species.- Plasma Chemistry in Etching.- Optical Diagnostic Techniques for Low Pressure Plasma Processing.- Measuring Eedf in Gas Discharge Plasmas.- Transport Phenomena in Plasma Processing.- Kinetics of a Low-Pressure H2 Multipole Discharge Used for GaAs Treatment.- Ar and Ti Excited States in the Vicinity of the Substrate during Magnetron Sputtering of Ti.- Modeling of the Plasma Nitriding Process.- Plasma Measurements in a Magnetron Sputtering Device.- Laser Induced Fluorescence Measurements of Ion Distribution Functions.- Laser Induced Fluorescence Measurements in Plasma Etching Processes.- Effect of Modulation on the Plasma Deposition of Hydrogenated and Fluorinated Silicon Nitride.- Partial Pressure Analysis of CF4/O2 Plasmas.- Surface Characterization of Corona Discharge Treated Poly (Ethylene Terephthalate).- The Physics of the Sputter Erosion Process.- Basic Phenomena in Reactive Etching of Materials.- Particle Bombardment Effects in thin Film Deposition.- Low-Energy Ion/Surface Interactions during Film Growth from the Vapor Phase: Effects on Nucleation and Growth Kinetics, Defect Structure, and Elemental Incorporation Probabilities.- Low-Energy Accelerated-Ion Doping of Si During Molecular Beam Epitaxy: Incorporation Probabilities, Depth Distribution, and Electrical Properties.- In Situ Substrate Chemical Analysis during Sputter Deposition.- Reactive Ion Beam Etching Studies of Tungsten with CF4 Using Ion Scattering Spectroscopy.- Estimation of Structural Damage Induced by Technological Processes on the Surface of Crystalline Binary Compounds by X-Ray Photoelectron Diffraction: Application to Reactive Ion Etching of GaAs(001) Surfaces.- In-Situ XPS Studies of thin Silicon Nitride Films on III-V Semiconductors Produced by Remote Plasma Enhanced Chemical Vapour Deposition.- Compositional and Structural Analysis of RF Sputtered Hydrogenated Amorphous Si1-xGex Alloys.- Thin Film Inhomogeneity Characterization by Ion Beam Technique.- Theoretical Analysis of the Influence of Foil Inhomogeneities on the Angular Variation of the Energy-Loss.- Applications of Plasma Etching.- The Application of Plasmas to thin Film Depostion Processes.- Plasma-Enhanced CVD of Silicon-Related Compounds.- Plasma-Assisted Deposition of Polymers.- RBS, SIMS, AES and ESCA Analysis of Surfaces.- The Process Transfer of Oxygen Reactive Ion Etching of Polymide between Different Etch Equipments.- Reactive Ion Etching of Silicon Containing Resists.- Surface Treatment of PP Films by a Non Equilibrium Low Pressure Plasma of NH3, N2, Ar.- Ion Beam and Plasma-Induced Etching in Structuring Electronic Devices.- Plasma Induced Polymerization.- Technological Considerations on thin Films Process Based on NTa2.- Surface Modification of Biomaterials with Plasma Glow Discharge Processes.- Rutherford Backscattering and Nuclear Reaction Analysis Study of Plasma Oxidation Silicides.- Recent Magnetron Design at Minho University — Characterization.- A Novel Microwave Ion Source as a New Tool for Submicron Etching of Microelectronic Devices.- Laser Coating of Engineering Materials for Increased Wear Resistance.- A Two-Stand Laboratory Facility for the Study of Laser Supported Plasma-Surface Interaction.- Effects of a Partial Orientation of Cu++ Complexes in YBa2Cu3O7-x Pellets.